Maxscend-MXD86A0S
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MXD86A0S
SP10T Switch with MIPI for LTE Diversity
This document contains information that is confidential and proprietary to Maxscend Microelectronics
Company Limited (Maxscend) and may not be reproduced in any form without express written consent of
Maxscend. No
transfer or licensing of technology is implied by this document.
Page 1 of 10
Maxscend Microelectronics Company Limited, All rights reserved.
Maxscend Confidential
MXD86A0S
–
SP10T Switch with MIPI for LTE Diversity
General Description
Features
Excellent insertion loss
The MXD86A0S is a low loss, high isolation SP10T
– 0.80
dB Insertion Loss at 2.7GHz
P0.1dB @ 27dBm
switch for antenna diversity receiving.
The MXD86A0S is compatible with MIPI control,
which is a key requirement for many cellular
transceivers. This part is packaged in a compact
2.4mm x 2.4mm, 20-pin, QFN package which
allows for a small solution size with no need for
external DC blocking capacitors (when no external
DC is applied to the device ports).
Multi-Band operation 700MHz to 3000MHz
RFFE serial control interface
Compact 2.4mm x 2.4mm in QFN-20
package
No DC blocking capacitors required (unless
external DC is applied to the RF ports)
Applications
2G/3G/4G antenna diversity
Cellular modems and USB Devices
Functional Block Diagram and Pin Function
RF1
RF2
RF3
RF4
RF5
ANT
RF6
Ground
Paddle
RF7
RF8
RF9
RF10
VIO
SCLK
SD
A
TA
VDD
Figure 1 Functional Block Diagram and Pinout (Top View)
Page 2 of 10
Maxscend Microelectronics Company Limited, All rights reserved.
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MXD86A0S
–
SP10T Switch with MIPI for LTE Diversity
Application Circuit
VDD
VIO
SDATA SCLK
16
17
15
14
13
12
11
10
VDD
GND
ANT
VIO
18
19
20
1
9
8
7
6
ANT
Ground
Paddle
SDATA
GND
GND
SCLK
2
3
4
5
C1
100pF
C4
DN1
C2
33nF
C3
DN1
Figure 2 Evaluation Board Schematic
Table 1. Pin Description
Pin No.
1
2
3
4
5
6
7
Name
NC
Description
Not Connect
RF port10
RF port9
RF port8
RF port7
RF port6
Ground
Pin No.
11
12
13
14
15
16
17
18
Name
RF5
RF4
RF3
RF2
RF1
GND
VDD
VIO
Description
RF port5
RF port4
RF port3
RF port2
RF port1
Ground
Power supply
Supply voltage for MIPI
RF10
RF9
RF8
RF7
RF6
GND
GND
ANT
GND
8
9
10
Ground
Antenna port
Ground
19
20
SDATA MIPI
data input/output
SCLK MIPI
clock
Ground
Paddle
GND
Ground
Note:
Bottom ground paddles must be connected to ground.
Page 3 of 10
Maxscend Microelectronics Company Limited, All rights reserved.
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MXD86A0S
–
SP10T Switch with MIPI for LTE Diversity
Truth Table
Table 2.
Register_0
State
Mode
D7
x
x
x
x
x
x
x
x
D6
0
0
0
0
0
0
0
0
D5
0
0
0
0
0
0
0
0
D4
0
D3
0
D2
0
1
0
0
0
0
0
1
D1
0
1
0
1
0
1
0
0
D0
0
1
1
1
0
0
1
0
1
2
3
4
5
6
7
8
9
ISO
RF1 on
RF2 on
RF3 on
RF4 on
RF5 on
RF6 on
RF7 on
RF8 on
RF9 on
RF10 on
0
0
0
1
0
1
0
1
0
1
0
0
0
0
x
x
x
0
0
0
0
0
0
0
1
1
1
1
0
0
1
0
1
0
10
11
0
0
0
0
Recommended Operation Range
Table 3. Recommended Operation Condition
Parameters
Operation Frequency
Symbol
f1
Min
0.7
Typ
–
Max
3.0
Units
GHz
Power supply
V
DD
V
IO
V
H
2.5
2.8
1.8
1.8
0
3.0
V
V
V
V
Power supply for MIPI
MIPI Control Voltage High
MIPI Control Voltage Low
1.65
0.8*VIO
0
1.95
1.95
0.3
V
L
Specifications
Table 4. Electrical Specifications
Parameter
DC Specifications
Supply voltage
Symbol
Test Condition
Min
Typical Max Units
V
DD
2.5
2.8
3.0
V
Supply current
I
DD
V
IO
I
IO
30
1.8
4
50
1.95
10
uA
V
V
IO
supply voltage
V
IO
Supply current
1.65
uA
SDATA, SCLK control voltage: High
Low
V
CTL
_
H
V
CTL
_
L
0.8* V
IO
0
V
IO
0
1.95
0.3
V
V
Switching Speed, one RF to another
10% to 90% RF
1
2
uS
RF Specifications
0.1 to 1.0 GHz
1.0 to 2.0 GHz
2.0 to 2.7 GHz
0.1 to 1.0 GHz
1.0 to 2.0 GHz
2.0 to 2.7 GHz
0.1 to 1.0 GHz
1.0 to 2.0 GHz
2.0 to 2.7 GHz
0.60
0.70
0.80
40
30
22
25
20
15
0.70
0.85
1.00
dB
dB
dB
dB
dB
dB
dB
dB
dB
Insertion loss (ANT pin to
RF1/2/3/4/5/6/7/8/9/10 pins)
IL
35
25
20
20
15
12
Isolation (ANT pin to
RF1/2/3/4/5/6/7/8/9/10 pins)
Iso
Input return loss (ANT pin to
RF1/2/3/4/5/6/7/8/9/10 pins)
RL
0.1 dB Compression Point (ANT pin
to RF1/2/3/4/5/6/7/8/9/10 pins)
P0.1dB
0.7 GHz to 3.0 GHz
+26
+27
dBm
Page 4 of 10
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MXD86A0S
–
SP10T Switch with MIPI for LTE Diversity
MIPI Read and Write Timing
MIPI supports the following Command Sequences:
•
Register Write
• Register_0 Write
• Register Read
Figures 3 and 4 provide the timing diagrams for register write commands and read commands, respectively.
Figure 5 shows the Register 0 Write Command Sequence. Refer to the MIPI Alliance Specification for RF
Front-End Control Interface (RFFE), v1.10 (26 July 2011) for additional information on MIPI USID
programming sequences and MIPI bus specifications.
CLK
SA3
SA2
SA1
SA0
0
1
0
A4
A3
A2
A1
A0
P
Data
SSC
Register Write Command Frame
CLK
Data
P
D7
D6
D5
D4
D3
D2
D1
D0
P
0
Bus
Park
Data Frame
Signal driven by Master
Signal not driven, pull down only
For reference only
Figure 3 Register Write Command Sequence
CLK
SA3
SA2
SA1
SA0
0
1
1
A4
A3
A2
A1
A0
P
Data
SSC
Register Read Command Frame
CLK
P
0
D7
D6
D5
D4
D3
D2
D1
D0
P
0
Data
Bus
Park
Bus
Park
Data Frame (from Slave)
Signal driven by Master
Signal driven by Slave
Signal not driven, pull down only by Master
For reference only
Figure 4 Register Read Command Sequence
Page 5 of 10
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MXD86A0S
–
SP10T Switch with MIPI for LTE Diversity
In the timing figures, SA[3:0] is slave address.
A[4:0] is register address.
D[7:0] is data. “P” is odd parity
bit.
Register 0 Write Command Sequence
Figure shows the Register 0 Write Command Sequence. The Command Sequence starts with an SSC,
followed by the Register 0 Write Command Frame containing the Slave address, a logic one, and a seven
bit word to be written to Register 0. The Command Sequence ends with a Bus Park Cycle.
CLK
SA3
SA2
SA1
SA0
1
D6
D5
D4
D3
D2
D1
D0
P
0
Data
Bus
Park
Parity
SSC
Slave Address
Data
Signal driven by Master
Signal not driven, pull down only
For reference only
Figure 5 Register 0 Write Command Sequence
Page 6 of 10
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MXD86A0S
–
SP10T Switch with MIPI for LTE Diversity
Register definition
Table 5. Register definition table
BROADC
AST_ID
support
Register
Address
Register
Name
Data
Bits
Trigger
support
R/W
Function
Description
Default
0x00
0x00
REGISTER_0
GROUP_SID
7:0
R/W
RF Control
Register_0 truth Table: Table 2
No
Yes
7:4
3:0
R
RESERVED
GSID
0x0
0x0
No
No
No
No
0x001B
R/W
Group Slave ID
00: Normal Operation (ACTIVE)
01: Reset all registers to default settings
(STARTUP)
10: Low power (LOW POWER)
11: Reserved
7:6
R/W
PWR_MODE
0b10
Yes
No
Note: Write PWR_MODE=2
’
h1 will reset all
register, and puts the device into STARTUP
state.
5
4
R/W
R/W
Trigger_Mask_2
Trigger_Mask_1
If this bit is set, trigger 2 is disabled
If this bit is set, trigger 1 is disabled
0
0
No
No
No
No
If this bit is set, trigger 0 is disabled
Note: When all triggers are disabled, writing
to a register that is associated with trigger 0,
1, or 2, causes the data to go directly to the
destination register.
0x001C
PM_TRIG
3
R/W
Trigger_Mask_0
0
No
No
A write of a one to this bit loads trigger 2’s
registers
2
1
W
W
Trigger_2
Trigger_1
0
0
Yes
Yes
No
No
A write of a one to this bit loads trigger 1’s
registers
A write of a one to this bit loads trigger 0’s
registers
0
W
Trigger_0
Note: Trigger processed immediately then
cleared. Trigger 0, 1, and 2 will always read
as 0.
0
Yes
No
0x001D
0x001E
PRODUCT_ID
7:0
7:0
7:6
5:4
3:0
R
PRODUCT_ID
Product Number
0x5d
0x81
0b00
0b11
0xb
No
No
No
No
No
No
No
No
No
No
MANUFACTU
RER_ID
MANUFACTUR
ER_ID[7:0]
Lower eight bits of MIPI registered
Manufacturer ID
R
R
RESERVED
MANUFACTUR
ER_ID[9:8]
Upper two bits of MIPI registered
Manufacturer ID
0x001F
MAN_USID
R
R/W
USID
USID of the device.
Page 7 of 10
Maxscend Microelectronics Company Limited, All rights reserved.
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MXD86A0S
–
SP10T Switch with MIPI for LTE Diversity
Absolute Maximum Ratings
Table 6. Maximum ratings
Parameters
Supply voltage
Symbol
Minimum
+2.0
Maximum
+3.3
Units
V
V
DD
Supply voltage for MIPI
MIPI Control voltage
(SDATA, SCLK)
RF input power (RF1 to
RF10)
V
IO
+1.0
+2.0
V
V
CTL
P
IN
0
+2.0
+28
V
dBm
Operating temperature
Storage temperature
T
OP
T
STG
–
20
–
40
+85
+125
℃
℃
Electrostatic Discharge
Human
(HBM), Class 1C
Machine Model (MM),
Class A
Charged device model
(CDM), Class III
body
model
ESD_HBM
ESD_MM
ESD_CDM
1000
100
V
500
Note:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device
Power ON and OFF sequence
Here is the recommendation about power-on/off sequence in order to avoid damaging the device.
Power ON
1) Apply voltage supply – V
DD
2) Apply logic supply – V
IO
3) Wait 10μs or greater and then apply
MIPI bus signals
–
SCLK and SDATA
4) Wait 5μs or greater after
MIPI bus goes idle and then apply the RF Signal
Power OFF
1) Remove the RF Signal
2) Remove MIPI bus
–
SCLK and SDATA
3) Remove logic supply – V
IO
4) Remove voltage supply – V
DD
VIO
ON
RF
ON
RF
OFF
VIO
OFF
VDD
OFF
VDD
ON
MIPI
Trigger
V
DD
V
IO
≥
100us
≥
100us
SHUTDOWN
STARTUP
≥
10us
SHUTDOWN
ACTIVE
Slave State
SDATA,SCLK
RF Signal
≥
5us
Note
: VIO can be applied to the device before VDD or removed after VDD.
It is important to wait 10μs after
VIO &
VDD are applied before sending SDATA
to ensure correction data transmission.
The
minimum time between a power up and power down sequence (and vice versa) is ≥ 100
us.
Page 8 of 10
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MXD86A0S
–
SP10T Switch with MIPI for LTE Diversity
Package Outline Dimension
Figure 6
package outline dimension
Page 9 of 10
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MXD86A0S
–
SP10T Switch with MIPI for LTE Diversity
Reflow Chart
t
P
Critical Zone
T
L
to T
P
T
P
T
L
Ramp-up
TS
max
TS
min
t
L
Ramp-down
t
S
Preheat
t 25
℃
to Peak
Time
Figure 7 Recommended Lead-Free Reflow Profile
Table 7. Reflow condition
Profile Parameter
Lead-Free Assembly, Convection, IR/Convection
Ramp-up rate
(
TS
max
to T
p
)
Preheat temperature
(
TS
min
to TS
max
Preheat time
(
t
s
)
Time above TL , 217
℃(
t
L
)
Peak temperature
(
T
p
)
3
℃
/second max.
150
℃
to 200
℃
60 – 180 seconds
60 – 150 seconds
260
℃
)
Time within 5
℃
of peak temperature(t
p
)
Ramp-down rate
Time 25
℃
to peak temperature
20 – 40 seconds
6
℃
/second max.
8 minutes max.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD
protection techniques should be used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant.
1.4.1
Page 10 of 10
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