Alpha—Omega-Semicon-AON7406
| Part # | Alpha—Omega-Semicon-AON7406 |
Download  | Alpha—Omega-Semicon-AON7406 |
AON7406
30V N-Channel
MOSFET
General Description
Product Summary
V
DS
30V
• The AON7406 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge.
This device is suitable for use in SMPS and general
purpose applications.
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
Typical ESD protection
25A
< 17m
Ω
< 23m
Ω
HBM Class 2
• RoHS and Halogen-Free Compliant
100% UIS Tested
100% R
g
Tested
DFN 3x3A
D
Top View
Bottom View
Top View
S
S
S
G
D
D
D
D
G
S
Pin 1
Pin 1
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
±20
V
A
T
C
=25
°
C
25
Continuous Drain
Current
I
D
T
C
=100
°
C
15
Pulsed Drain Current
C
I
DM
50
T
A
=25
°
C
T
A
=70
°
C
9
Continuous Drain
Current
I
DSM
A
7
Avalanche Current
C
I
AS
, I
AR
19
A
Avalanche energy L=0.1mH
C
E
AS
, E
AR
18
mJ
T
C
=25
°
C
Power Dissipation
B
T
C
=100
°
C
15.5
P
D
W
6
T
A
=25
°
C
3.1
2
P
DSM
W
°C
Power Dissipation
A
T
A
=70
°
C
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
40
75
8
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤
10s
R
θ
JA
Steady-State
Steady-State
60
R
θ
JC
6.6
Rev.6.0: July 2013
Page 1 of 6
AON7406
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
30
V
V
DS
=30V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
= ±16V
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=9A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
µ
A
V
V
GS(th)
I
D(ON)
1.2
50
1.8
2.4
A
14
20
17
24
23
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
GS
=4.5V, I
D
=8A
18
m
Ω
S
V
DS
=5V, I
D
=9A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
40
I
S
=1A,V
GS
=0V
0.75
1
V
Maximum Body-Diode Continuous Current
15
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
600
77
740
110
82
888
145
115
1.7
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
50
V
GS
=0V, V
DS
=0V, f=1MHz
0.5
1.1
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
12
6
15
7.5
2.5
3
18
9
nC
nC
nC
nC
ns
Q
g
(4.5V) Total
Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=9A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5
V
GS
=10V, V
DS
=15V, R
L
=1.67
Ω
,
R
GEN
=3
Ω
3.5
19
3.5
ns
t
D(off)
t
f
ns
ns
t
rr
I
F
=9A, dI/dt=500A/
µ
s
I
F
=9A, dI/dt=500A/
µ
s
6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8
10
22
ns
Q
rr
14
nC
18
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
t
≤
10s value and the maximum allowed junction temperature of 150
°
C. The value in any given
application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.6.0: July 2013
Page 2 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
10V
V
DS
=5V
4V
5V
3V
125
°
C
V
GS
=2.5V
25
°
C
0
0
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
30
1.8
1.6
1.4
1.2
1
25
20
15
10
5
V
GS
=10V
I
D
=9A
V
GS
=4.5V
V
GS
=10V
V
GS
=4.5V
I
D
=8A
0.8
0
0
25
50
75
100
125
150
175
0
5
10
I
D
(A)
15
20
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
40
35
30
25
20
15
10
1.0E+02
1.0E+01
I
D
=9A
1.0E+00
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
25
°
C
25
°
C
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.6.0: July 2013
Page 3 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
V
DS
=15V
I
D
=9A
1000
800
600
400
200
0
8
C
iss
6
4
C
oss
2
C
rss
0
0
3
6
9
12
15
0
5
10
15
20
25
30
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
100.0
10.0
1.0
10
µ
s
R
DS(ON)
limited
T
J(Max)
=150
°
C
T
C
=25
°
C
100
µ
s
1ms
DC
10ms
T
J(Max)
=150
°
C
T
C
=25
°
C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=8
°
C/W
P
D
0.1
T
on
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.6.0: July 2013
Page 4 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
20
T
A
=25
°
C
T
A
=100
°
C
16
T
A
=150
°
C
12
10
8
T
A
=125
°
C
4
1
0
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, t
A
(
µ
s)
Figure 12: Single Pulse Avalanche capability (Note
C)
T
CASE
(
°
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
30
25
20
15
10
5
T
A
=25
°
C
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
Pulse Width (s)
T
CASE
(
°
C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JA
=75
°
C/W
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.6.0: July 2013
Page 5 of 6
AON7406
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Rev.6.0: July 2013
Page 6 of 6
