Agertech-ATM3401APSA

Part #Agertech-ATM3401APSA
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Agertech-ATM3401APSA
ATM3401APSA  
P-Channel Enhancement Mode Field Effect Transistor  
Drain-Source Voltage
:
-30V  
Drain Current
:
-4.2A  
DESCRIPTIONS  
SOT-23  
The ATM3401APSA uses advanced trench technology to  
provide excellent R

DS(ON)

, low gate charge and operation  
with gate voltages as low as 2.5V. This device is suitable  
for use as a load switch or in PWM applications.  
FEATURES  
Sc
ematic diagram  
V

DS (V)

= -30V
 
I

D

= -4.2 A
 
(V

GS

= -10V)  
R

DS(ON)

< 55mΩ (V

GS

= -10V)  
D
3
R

DS(ON)

< 75mΩ (V

GS

= -4.5V)  
R

DS(ON)

< 90mΩ (V

GS

= -2.5V)  
1
G
2
S
ABSOLUTE MAXIMU
RATINGS  
T

A

=25
℃
unless otherw
e noted  
Parameter  
Symbol  
V

DS  

Units  
Value  
-30  
Drain-Source
oltage  
V
V
A
A
Gate-Source Vo
ge  
V

GS  

±12  
nt
ous Drain
 
C
rrent  
lsed Drain Current

1  

I
D  
-4.2  
-30  
I
DM  
1.2  
P

D  

W
P
wer D
sipation  
T
J
, T
STG  
-55 to 150  
°C  
J
ction and Storage
T
emperature Range  
THERMAL CHARACTERRISTICS  
Parameter  
Symbol  
Units  
Max  
Thermal Resistance,
 
Junction-to-Ambient

2  

104  
R

θ

JA  
°C/W  
Dated:0
9
/2017  
Rev:
1
.0  
AGERTECH MICROELECTRONICS  
Subsidiary of Sino-Talent International Holdings Ltd.  
1/8  

ATM3401APSA  
ELECTRICAL CHARACTERISTICS  
T

A

=25
℃
unless otherwise noted  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
STATIC PARAMETERS

3  

Drain-Source Breakdown Voltage  
V

(BR)DS  

-30  
V
I

D

=-250
µ
A, V

GS

=0V  
µ
A  
nA  
V
Zero Gate Voltage Drain Current  
Gate-Body leakage current  
Gate Threshold Voltage  
I
DSS  
I
GSS  
V

DS

=-24V, V

GS

=0V  
V

DS

=0V, V

GS

=±10V  
-1  
±100  
-1.3  
V
GS(th)  
-0.7  
-1  
V
DS
=V
GS
I
D
=-250
µ
A  
V

GS

=-10V, I

D

=-4.2A  
V

GS

=-4.5V, I

D

=-4A  
Ω  
m
Ω  
48  
56  
55  
0  
Static Drain-Source On-Resistance  
R
DS(ON)  
72  
10  
V

GS

=-2.5V, I

D

=-1A  
V

DS

=-5V, I

D

=-4.2A  
I

S

=-4.2A,V

GS

=0V  
m
Ω  
S
Forward Transconductance  
Diode Forward Voltage

3  

g
FS  
V

SD  

-1.2  
V
DYNAMIC PARAMETERS

4  

880  
105  
65  
Input Capacitance  
C

iss  

C

oss  

C

rss  

pF  
pF  
pF  
V

GS

=
V, V

DS

=-1
,  
f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTim
Turn-Off Fall
me  

gd  

t
d
)  
t

r  

8.5  
1.8  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
V

GS

=-4.5V, V

DS

=-15V,  
I

D

=-4.2A  
2.7  
7
3
V

GS

=-10V, V

DS

=-15V,  
t
d(off)  
t

f  

30  
12  
I

D

=-4.2A
, R

GEN

=6
Ω
 
NOTES:  
1. Repetitive Ratin
Pulse
idth limited by maximum junction temperature.  
2.
urf
Mounted on FR4 Board, t ≤ 10 sec.  
3.
ulse Test: P
se Width ≤ 300μs, Duty Cycle ≤ 2%.  
4.
uarante
d by design, not subject to productio  
Dated:0
9
/2017  
Rev:
1
.0  
AGERTECH MICROELECTRONICS  
Subsidiary of Sino-Talent International Holdings Ltd.  
2/8  

ATM3401APSA  
TYPICAL CHARACTERISTICS
 
CURVES  
t

on  

t

off  

t

f  

t

r  

t

d(on)  

V

OUT  

V

IN  

t

d(off)  

90%  
90%  
INVERTED  
10%  
90%  
10%  
50%  
50%  
10%  
PULSE WIDTH  
Figure 1:Switching
T
e
st Circuit  
Figure 2:Switc
ing Wa
forms  
T

J

-Junction
T
e
perature(
℃
)  
T

J

-Junction
T
e
mperature(
℃
)  
Figure 3 Powe
Dissipation  
Figure 4 Drain Current  
V
DS
Drain-Source Voltage (V)  
I

D

– Drain Current (A)  
Figure 5 Output Characteristics  
Figure 6 Drain-Source On-Resistance  
Dated:0
9
/2017  
Rev:
1
.0  
AGERTECH MICROELECTRONICS  
Subsidiary of Sino-Talent International Holdings Ltd.  
3/8  

ATM3401APSA  
V
GS
Gate-Source Voltage (V)  
T

J

-Junction
T
e
mperatu
℃
)  
Figure 7 Transfer Characteristics  
Figure 8 Drain-Source On-R
sistance  
V
GS
te-Source Voltage (V)  
Fi
ure 9 R
on vs V
GS  
V
DS
Drain-Source Voltage (V)  
Figure 10 Capacitance vs V
DS  
Qg Gate Charge (nC)  
V
SD
Source-Drain Voltage (V)  
Figure 11 Gate Charge  
Figure 12 Source- Drain Diode Forward  
Dated:0
9
/2017  
Rev:
1
.0  
AGERTECH MICROELECTRONICS  
Subsidiary of Sino-Talent International Holdings Ltd.  
4/8  

ATM3401APSA  
V
DS
Drain-Source Voltage (V)  
Figure 13 Safe Operation Area  
Square Wave Pluse Duration(sec)  
Figure 1
Normalized Maximum Transient Thermal Impedance  
Dated:0
9
/2017  
Rev:
1
.0  
AGERTECH MICROELECTRONICS  
Subsidiary of Sino-Talent International Holdings Ltd.  
5/8  

ATM3401APSA  
PACKAGE OUTLINE  
SOT-23
(
TO-236)  
0.8  
Dimensions in millimet
Symbol  
Min.  
Typ.  
1.02
0.05
ax.  
.150  
0.1
0.900  
A
A1  
0.000  
0.8  
b
c
0.300  
0.080  
2.80
0.400  
0.115  
2.900  
0.500  
0.150  
3.000  
D
E
1.200  
2.250  
1.800  
1.30
.400  
1.400  
2.550  
2.000  
H
E
1.9  
1.900  
e
L1  
L
0.550REF  
SOT-23 (
TO-236
)  
0.
00  
0.500  
o
o
0
8
θ
R
ecommended soldering pad  
ORDERING INFORMATION  
Device  
Package  
Shipping  
A
T
M3401APSA  
SOT-23  
3000/Reel&Tape(7inch)  
Dated:0
9
/2017  
Rev:
1
.0  
AGERTECH MICROELECTRONICS  
Subsidiary of Sino-Talent International Holdings Ltd.  
6/8  

ATM3401APSA  
CONDITIONS OF SOLDERING
AND STORAGE  
Recommended condition of reflow soldering  
Recommended peak temperature is over 245

O

C. If peak tem
erat
e
s below 2
5

O

C, you may adjust  
the following parameters:  
Time length of peak temperature (longer)  
Time length of soldering (longer)  
Thickness of solder paste (thicker
Condition
s
of hand sold
ring  
T
e
mperature: 370

O

C  
Time: 3s
 
m
x.  
Times
one time  
orage c
ondition
s  
emperature  
5 to 40

O

C  
Humidity  
30 to 80% RH  
Recommended period  
One yaer after manufacturing  
Dated:0
9
/2017  
Rev:
1
.0  
AGERTECH MICROELECTRONICS  
Subsidiary of Sino-Talent International Holdings Ltd.  
7/8  

ATM3401APSA  
PACKAGE
SPECIFICATIONS  
The method of packaging  
3,000 pcs per reel  
1
3
SOT-23 (
TO-236
)  
2
30
,000 pcs per box  
10
reels per box  
220  
195  
120,000
per carton  
4
bo
es pe
arton  
435  
210  
Embossed tape and reel data  
G
4.0  
4.0  
F
120°±2
C
A
1Pin  
Tape (8mm)  
Symbol  
Value
(
unit: mm
)  
3.15
± 0.
1  
2
.7
± 0.
1  
A
B
Reel (7”)  
1.25
± 0.
1  
2 ± 0.5  
C
E
13 ± 0.5  
178 ± 2
.0  
8.4 ± 1.5  
4 ± 0.5  
60  
F
D
G
H
N
T
< 14.9  
Dated:0
9
/2017  
Rev:
1
.0  
AGERTECH MICROELECTRONICS  
Subsidiary of Sino-Talent International Holdings Ltd.  
8/8