HXY-MOSFET-SiS407DN-HXY
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HUAXUANYANG
HXY
SiS407DN
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Description
The
SiS407DN
uses advanced trench technology
G
S
S
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
S
D
D
D
D
G
S
S
S
“
Pin 1
Battery protection or in other Switching application.
DFN3X3-8L
General Features
D
V
DS
= -20V
I
D
=-30A
R
DS(ON)
< 15 m
Ω
@
V
GS
=4.5V
Application
G
S
Battery protection
P-Channel MOSFET
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
SiS407DN
DFN3X3-8L
30P02
XXX YYYY
5000
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
VDS
Parameter
Rating
Units
V
Drain-Source Voltage
-20
±
12
-30
VGS
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
IDM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
-18
A
-68
A
P
D
@T
C
=25
℃
TSTG
T
o
tal Power Dissipation
4
Storage
T
e
mperature Range
18
W
-55 to 150
-55 to 150
75
℃
T
J
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
℃
R
θ
JA
℃
/W
℃
/W
R
θ
JC
4.2
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SiS407DN
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-20
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-4.5V , I
D
=-10A
-0.012
12
—
V/
℃
—
15
R
DS(ON)
Static Drain-Source On-Resistance
2
13
m
V
GS
=-2.5V , I
D
=-8A
—
18
V
GS(th)
△
V
GS(th)
I
DSS
I
GSS
gfs
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
-0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.7
2.94
—
-1.0
—
V
mV/
℃
uA
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-15V , V
GS
=0V , T
J
=25
℃
1
V
GS
=
±
12 V , V
DS
=0V
—
±
100
—
nA
V
DS
=-5V , I
D
=-10A
43
S
Q
g
35
—
V
DS
=-10V , V
GS
=-4.5V , I
D
=-10A
nC
ns
Q
gs
5.0
10
—
Q
gd
—
T
d(on)
T
r
Turn-On Delay Time
12.0
40.0
30
—
V
DD
=-10V , V
GS
=-4.5V ,
Rise Time
—
T
d(off)
T
f
Turn-Off Delay Time
R
G
=3.3
, I
D
=-10A
—
Fall Time
—
10
C
iss
Input Capacitance
2800
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
C
oss
C
rss
Output Capacitance
690
590
—
Reverse Transfer Capacitance
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
-30.0
–
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
I
F=-10A , dI/dt=100A/µs ,
T
J
=25
℃
—
—
-1.2
—
V
—
27
nS
nC
Q
rr
—
17.8
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SiS407DN
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Typical Characteristics
20
16
12
8
I
D
=-14A
4
0
1
3
4
5
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
12
9
T
J
=150
℃
T
J
=25
℃
6
3
0
0
0.3
0.6
0.9
1.2
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
1.8
1 . 8
1 . 4
1 . 0
0 . 6
0 . 2
1.4
1
0.6
0.2
– 5 0
0
50
100
150
-50
0
50
100
150
T
J
, J
u n c t i o n
T e m
p
℃
e
)
r
Tj ,Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SiS407DN
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
10000
1000
100
Ciss
Coss
Crss
F=1.0MHz
10
1
5
9
13
17
21
V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.001
S
I
NGLE PULSE
P
DM
T
ON
T
D = T
ON
/T
T
J
peak = T
A
+ P
DM
x R
θJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SiS407DN
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
DFN3X3-8L Package Information
Dimensions In Millimeters
Nom.
Symbol
Min.
0.70
0.25
0.10
3.25
3.00
1.48
–
Max.
0.80
0.35
0.25
3.45
3.20
1.68
–
A
b
0.75
0.30
0.15
3.35
3.10
1.58
0.13
3.30
3.15
2.49
c
D
D1
D2
D3
E
3.20
3.00
2.39
3.40
3.20
2.59
E1
E2
e
0.65BSC
H
0.30
0.39
0.40
0.13
*
0.50
0.50
–
L
0.30
L1
M
–
*
0.15
。
10
。
12
θ
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
SiS407DN
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
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in such applications.
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
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characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
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