Samwin-SWD8N65DB
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SW8N65DB
N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET
BV
DSS
: 650V
I
D
: 8A
Features
TO-251
TO-252
TO-220F
TO-262N
⚫
High ruggedness
R
DS(ON)
: 1.0Ω
⚫
Low R
DS(ON)
(Typ 1.0
Ω
)@V
GS
=10V
⚫
Low Gate Charge (Typ 34nC)
⚫
Improved dv/dt Capability
⚫
100% Avalanche Tested
2
1
1
1
1
2
2
2
2
⚫
Application:LED, Charger, PC Power
3
3
3
3
1
1. Gate
2. Drain
3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
3
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
Order Codes
Item
Sales Type
SW I 8N65DB
SW D 8N65DB
SW F 8N65DB
SW J 8N65DB
Marking
Package
Packaging
TUBE
1
2
3
4
SW8N65DB
SW8N65DB
SW8N65DB
SW8N65DB
TO-251
TO-252
REEL
TO-220F
TO-262N
TUBE
TUBE
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-251
TO-252 TO-220
F
T
O-262N
V
DSS
I
D
Drain to source voltage
650
8*
V
A
A
A
V
Continuous drain current (@T
C
=25
o
C)
Continuous drain current (@T
C
=100
o
C)
Drain current pulsed
5*
I
DM
(note 1)
32
V
GS
Gate to source voltage
±
30
384
E
AS
E
AR
Single pulsed avalanche energy
(note 2)
(note 1)
(note 3)
mJ
Repetitive avalanche energy
Peak diode recovery dv/dt
23
5
mJ
V/ns
W
dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating factor above 25
o
C
178.6
1.43
156.3
1.25
17.9
0.14
181
P
D
1.45
W/
o
C
o
C
T
STG
, T
J
Operating junction temperature & storage temperature
-55 ~ + 150
Maximum lead temperature for soldering
T
L
300
o
C
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-251
0.7
TO-252 TO-220
F
T
O-262N
R
thjc
R
thja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
0.8
7.0
0.69
66
o
C/W
o
C/W
90
52.7
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
1/7
SW8N65DB
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
650
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D
=250uA, referenced to 25
o
C
0.61
V/
o
C
V
DS
=650V, V
GS
=0V
1
uA
uA
nA
nA
I
DSS
Drain to source leakage current
V
DS
=520V, T
C
=125
o
C
50
Gate to source leakage current, forward
V
GS
=30V, V
DS
=0V
Gate to source leakage current, reverse
V
GS
=-30V, V
DS
=0V
100
-100
I
GSS
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=4A
V
DS
=30V, I
D
=4A
2.5
4.5
1.2
V
Ω
S
Drain to source on state resistance
Forward transconductance
1.0
7
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
Input capacitance
1770
126
13
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
V
GS
=0V, V
DS
=25V, f=1MHz
pF
ns
22
V
DS
=325V, I
D
=8A, R
G
=25Ω,
V
GS
=10V
34
t
d(off)
t
f
Turn off delay time
Fall time
72
(note 4,5)
32
Q
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
34
V
DS
=520V, V
GS
=10V, I
D
=8A
(note 4,5)
Q
gs
Q
gd
R
g
9
nC
14
V
DS
=0V, Scan F mode
1.6
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
I
S
I
SM
8
A
A
Integral reverse p-n Junction
diode in the MOSFET
32
1.4
V
SD
Diode forward voltage drop.
Reverse recovery time
I
S
=8A, V
GS
=0V
V
t
rr
478
4.3
ns
uC
I
S
=8A, V
GS
=0V,
dI
F
/dt=100A/us
Q
rr
Reverse recovery charge
※
. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L =12mH, I
AS
=8A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25
o
C
I
SD
≤8A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
2/7
SW8N65DB
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Fig. 4. On-state current vs. diode
forward voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 6. On-resistance variation
vs. junction temperature
Fig 5. Breakdown voltage variation
vs. junction temperature
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
3/7
SW8N65DB
Fig. 7. Maximum safe operating area(TO-251)
Fig. 8. Maximum safe operating area(TO-252)
Fig. 9. Maximum safe operating area(TO-220F)
Fig. 10. Maximum safe operating area(TO-262N)
Fig. 11. Gate charge characteristics
Fig.12. Capacitance Characteristics
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
4/7
SW8N65DB
Fig. 13. Transient thermal response curve(TO-251)
Fig. 14 Transient thermal response curve(TO-252)
Fig. 15. Transient thermal response curve(TO-220F)
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
5/7
SW8N65DB
Fig. 16. Transient thermal response curve(TO-262N)
Fig. 17. Gate charge test circuit & waveform
Fig. 18. Switching time test circuit & waveform
V
DS
90%
R
L
V
DS
R
GS
V
DD
10%
10%
t
d(on)
V
IN
t
f
t
d(off)
10V
IN
DUT
t
r
t
ON
t
OFF
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
6/7
SW8N65DB
Fig. 19. Unclamped Inductive switching test circuit & waveform
Fig. 20. Peak diode recovery dv/dt test circuit & waveform
DU
T
10V
+
–
V
GS
(DRIVER)
I
S
(DU
)
V
DS
L
di/dt
I
S
I
RM
V
DS
R
G
Diode reverse current
V
DD
Diode recovery dv/dt
10V
GS
Same type
as DUT
V
DD
V
DS
(DU
)
V
F
*. dv/dt controlled by R
G
*. Is controlled by pulse
period
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
Copyright@ Semipower Technology Co., Ltd. All rights reserved.
May.2022. Rev. 6.0
7/7
