HXY-MOSFET-S8050
| Part # | HXY-MOSFET-S8050 |
Download  | HXY-MOSFET-S8050 |
HUAXUANYANG
HXY
S8050
ELECTRONICS CO.,LTD
NPN Plastic-Encapsulate Transistors
FEATURES
z
Collector Current: I
C
=0.5A
C
E
z
Power Dissipation of 300mw
B
SOT-23
Package Marking and Ordering Information
C
Marking
Pack
Qty(PCS)
Product ID
3000
S8050
SOT-23
J3Y
B
E
MA
X
IMUM RATINGS (Ta=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
V
V
40
25
Collector-Emitter
V
o
ltage
E
m
itter-Base
V
oltage
5
V
Collector Current
500
mA
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
Junction
T
e
m
perature
P
C
300
mW
R
ΘJA
T
j
℃
/W
417
150
℃
℃
S
t
orage
T
e
m
perature
T
stg
-55
～
+150
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
S8050
ELECTRONICS CO.,LTD
NPN Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS (T
a
=25 unless
otherwise specified)
℃
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
= 100
μ
A, I
E
=0
M
in
40
25
5
T
yp
M
ax
U
nit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=1mA, I
B
=0
V
V
I
E
=100
μ
A, I
C
=0
V
CB
=40 V , I
E
=0
0.1
0.1
0.1
400
μ
A
μ
A
μ
A
Collector cut-off current
I
CEO
V
CB
=20V , I
E
=0
Emitter cut-off current
I
EBO
V
EB
= 5V ,
I
C
=0
120
50
h
FE(1)
V
CE
=1
V
, I
C
= 50mA
V
CE
=1
V
, I
C
= 500mA
I
C
=500 mA, I
B
= 50mA
I
C
=500 mA, I
B
= 50mA
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
0.6
1.2
V
V
V
CE
=6
V
, I
C
= 20mA
Transition frequency
f
T
150
MHz
f=
30MHz
Typical Characteristics
h
FE
—— I
C
Static Characteristic
100
1000
COMMON EMITTER
V
CE
=1V
COMMON
EMITTER
T
a
=25
℃
400uA
80
T
a
=100
℃
T
a
=25
℃
350uA
300uA
60
250uA
100
200uA
40
20
0
150uA
100uA
I
B
=50uA
20
10
1
3
10
30
100
500
0
4
8
12
16
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
S8050
ELECTRONICS CO.,LTD
NPN Plastic-Encapsulate Transistors
I
C
V
BEsat
——
V
CEsat
—— I
C
1.2
0.8
0.4
500
300
T
a
=25
℃
100
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
30
10
β
=10
β
=10
0.0
30
10
500
3
1
3
10
30
100
1
100
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
——
V
CB
/ V
EB
500
100
100
COMMON EMITTER
V
CE
=1V
f=1MHz
I
E
=0/ I
C
=0
T
a
=25
℃
C
ib
30
10
30
10
T
a
=25
℃
C
ob
T
a
=100
℃
3
1
3
1
0.3
0.1
0.1
0.3
1
3
10
20
0.2
0.4
0.6
0.8
1.0
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(V)
P
C
—— T
a
f
T
—— I
C
400
1000
V
CE
=6V
T
a
=25
℃
300
200
100
0
100
10
10
30
100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
(mA)
AMBIENT TEMPERATURE
T
(
℃
)
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
S8050
ELECTRONICS CO.,LTD
NPN Plastic-Encapsulate Transistors
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
S8050
ELECTRONICS CO.,LTD
NPN Plastic-Encapsulate Transistors
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