onsemi-FDC86244
| Part # | onsemi-FDC86244 |
Download  | onsemi-FDC86244 |
MOSFET
– N-Channel,
Shielded Gate,
POWERTRENCH
)
150
V
,
2
.3 A, 144 m
W
FDC86244
General Description
This N
−
Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized for r
, switching
DS(on)
performance and ruggedness.
TSOT23 6
−
Lead
Features
CASE 419BL
•
Shielded Gate MOSFET Technology
•
Max r
•
Max r
= 144 m
W
at V
= 10
V
, I
=
2
.3 A
GS D
DS(on)
= 188 m
W
at V
= 6
V
, I
=
1
.9 A
MARKING DIAGRAM
DS(on)
GS
D
•
High Performance Trench Technology for Extremely Low r
•
High Power and Current Handling Capability in a Widely Used
Surface Mount Package
DS(on)
&E&Y
&.244&
G
•
Fast Switching Speed
•
100% UIL Tested
1
XXX =
Specific Device Code
&E =
Space Designator
&Y =
Y
e
ar of Production
•
This Device is Pb
−
Free, Halogen Free/BFR Free and is RoHS
Compliant
&.
G
= Pin One Identifier
= Pb
−
Free Package
Applications
•
Load Switch
•
Synchronous Rectifier
•
Primary Switch
PINOUT
S
D
D
G
D
D
4
3
2
1
5
6
SuperSOT
TM
−
6
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2020
−
Rev. 2
FDC86244/D
FDC86244
MOSFET MAXIMUM RATINGS
T
A
= 25
°
C unless otherwise noted
Symbol Parameter
Ratings
150
Units
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
V
V
A
20
I
D
Drain Current
2.3
10
−
Pulsed
E
12
1.6
mJ
W
AS
P
D
0.8
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to +150
°
C
J
STG
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Units
°
C/W
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
30
78
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
8 mm
Quantity
0.244
FDC86244
SSOT
−
6
7
”
3000 Units
2
FDC86244
ELECTRICAL CHARACTERISTICS
T
J
= 25
°
C unless otherwise noted
Symbol
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
Parameter
Test Conditions
Min
Typ
Max
Units
I
I
= 250
m
A, V
= 0 V
GS
150
V
D
DSS
D
BV
= 250
m
A, referenced to 25
°
C
Breakdown Voltage
T
e
mperature
Coefficient
103
mV/
°
C
DSS
D
D
T
J
μ
A
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120
V
, V
= 0 V
1
DSS
DS
GS
I
=
20
V
, V
= 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
Gate to Source Threshold Voltage
V
I
= V
, I
= 250
m
A
DS D
V
GS(th)
2.0
2.5
4.0
V
GS
Gate to Source Threshold Voltage
T
e
mperature Coefficient
= 250
m
A, referenced to 25
°
C
−
9
mV/
°
C
D
V
D
GS(th)
D
T
J
r
Static Drain to Source On Resistance
m
W
V
V
V
V
= 10 V, I
= 2.3 A
113
128
214
6
144
188
273
DS(on)
GS
D
= 6
V
, I
= 1.9 A
GS
GS
DD
D
= 10 V, I
= 2.3 A, T
= 125
°
C
D
J
g
FS
Forward Transconductance
= 5
V
, I
= 2.3 A
S
D
DYNAMIC CHARACTERISTICS
V
= 75
V
, V
= 0 V,
C
Input Capacitance
260
32
345
45
5
pF
pF
pF
W
DS
GS
iss
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
1.7
1.3
rss
R
g
SWITCHING CHARACTERISTICS
V
= 75
V
, I
=
2
.3 A, V
= 10
V
, R
= 6
W
t
Turn
−
On Delay Time
Rise Time
4.7
1.4
10
10
10
20
10
6
ns
ns
DD
D
GS
GEN
d(on)
t
r
t
Turn
−
Off Delay Time
Fall Time
ns
d(off)
t
f
3.1
4.2
2.4
1.0
1.0
ns
Q
V
DD
= 75 V
T
o
tal Gate Charge
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Drain “Miller” Charge
V
V
I
= 0 V to 10 V
= 0 V to 5 V
nC
nC
nC
nC
g(TOT)
GS
4
GS
= 2.3 A
Q
D
gs
Q
gd
DRAIN
−
SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
0.8
45
33
1.3
73
53
V
SD
GS
S
I =
2.3 A, di/dt = 100 A/
m
s
F
t
ns
nC
rr
Q
Reverse Recovery Charge
rr
1. R
is the sum of the junction
−
to
−
case and case
−
to
−
ambient thermal resistance where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θ
θ
CA
JC
b. 175
°
C/W when mounted on
a minimum pad of 2 oz copper
a. 78
°
C/W when mounted on
2
a 1 in
pad of 2 oz copper
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty cycle < 2.0 %.
3. Starting
T
J
= 25
°
C, L = 1.0 mH, I
AS
= 5.0 A, V
DD
= 135
V
,
V
GS
= 10 V.
3
FDC86244
TYPICAL CHARACTERISTICS
T =
25
°
C Unless Otherwise Noted
J
5
10
8
V
GS
=
10 V
V
GS
=
6 V
V
GS
= 4 V
V
GS
= 4.5 V
4
3
2
1
0
V
GS
= 5 V
V
GS
= 5 V
6
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
4
V
GS
=
6 V
2
V
GS
= 4 V
V
GS
=
10 V
PULSE DURATION = 8
0
m
s
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0
2
4
6
8
10
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance
vs Drain Current and Gate Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
500
400
300
200
100
0
I
D
= 2.3 A
V
GS
= 10 V
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
I
D
= 2.3 A
T
J
= 125
o
C
T
J
= 25
o
C
−
75
−
50
−
25
0
25 50 75
100 125 150
2
4
6
8
1
0
T
J
,
JUNCTION TEMPERATURE
o
C
( )
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On
−
Resistance
Figure 4. On
−
Resistance vs Gate to
vs Junction Temperature
Source Voltage
10
8
10
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
1
0.1
V
DS
= 5 V
T
J
= 15
0
o
C
T
J
= 25
o
C
T
J
= 150
o
C
6
T
J
= 25
o
C
4
T
J
=
−
55
o
C
0.01
2
T
J
=
−
55
o
C
0
0.001
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
4
FDC86244
TYPICAL CHARACTERISTICS
T =
25
°
C Unless Otherwise Noted (continued)
J
10
8
400
I
D
= 2.3 A
V
DD
= 50 V
C
iss
100
V
DD
= 75 V
6
C
oss
V
DD
= 100 V
4
10
2
f = 1 MHz
V
GS
= 0 V
C
rss
1
0
0.1
1
10
100
0
1
2
3
4
5
V
D
S
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
7
6
5
4
3
2
1
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
= 10 V
T
J
= 25
o
C
V
GS
= 6 V
T
J
= 100
o
C
T
J
= 125
o
C
R
q
JA
= 78
o
C/W
25
50
75
100
125
150
0.01
0.1
1
2
t
A
V
, TIME IN AVALANCHE (ms)
T
A
,
AMBIENT TEMPERATURE
o
(
C
)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
1000
100
10
20
10
SINGLE PULSE
q
JA
= 17
5
o
C/W
A
= 2
5
o
C
R
100 us
T
1
1 ms
THIS AREA IS
LIMITED BY r
10 ms
0.1
DS(on)
100 ms
SINGLE PULSE
T
J
= MAX RATED
1 s
0.01
0.001
10 s
R
q
JA
= 175
o
C/W
DC
1
T
A
= 2
5
o
C
0.5
10
−
4
10
−
3
10
−
2
t, PULSE WIDTH (sec)
10
−
1
1
10
100 1000
0.1
1
10
100
500
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
5
FDC86244
TYPICAL CHARACTERISTICS
T =
25
°
C unless otherwise noted (continued)
J
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
q
JA
= 175
o
C/W
1
2
R
PEAK T
= P
x Z
x R
+ T
q
JA
A
J
DM
q
JA
0.001
10
−
4
10
−
3
10
−
2
10
−
1
t, RECTANGULAR PULSE DURATION (sec)
11
0
100
1000
Figure 13. Junction
−
to
−
Ambient Transient Thermal Response Curve
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6
−
Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX M
G
G
1
XXX =
Specific Device Code
M
= Date Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6
−
Lead
PAGE 1 OF 1
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