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May 2010
KSC5338D/KSC5338DW
NPN Triple Diffused Planar Silicon Transistor
Features
• High
Voltage Power Switch Switching Application
• Wide
Safe Operating Area
• Built-in
Free-Wheeling Diode
• Suitable
for Electronic Ballast Application
• Small
Variance in Storage Time
• Two
Package Choices : TO-220 or D
2
-PAK
Equivalent Circuit
D
2
-PAK
C
1
B
TO-220
E
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Units
V
V
V
A
Collector-Base Voltage
1000
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
450
12
5
10
I
CP
I
B
A
A
2
I
BP
P
C
T
J
T
STG
*Base Current (Pulse)
Power Dissipation (T
C
=25
°
C)
Junction
T
e
mperature
Storage
T
e
mperature
4
75
150
A
W
°
C
°
C
– 55 to 150
* Pulse Test : Pulse Width = 5ms, Duty Cycle
≤
10%
Thermal Characteristics
Symbol
Parameter
Rating
1.65
62.5
Units
°
C/W
°
C/W
°
C
R
θ
jc
R
θ
ja
Junction to Case
Thermal Resistance
Junction to Ambient
T
L
Maximum Lead
T
e
mperature for Soldering
270
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
1
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
Parameter
Test Condition
Min. Typ. Max.
Units
Collector-Base Breakdown Voltage
I
C
=1mA, I
E
=0
1000
450
12
V
Collector-Emitter Breakdown Voltage
I
C
=5mA, I
B
=0
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V
V
I
E
=1mA, I
C
=0
V
CB
=800V, I
E
=0
10
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
I
CES
Collector Cut-off Current
V
CES
=1000V, I
EB
=0 T
a
=25
°
C
T
a
=125
°
C
100
500
100
500
10
I
CEO
Collector Cut-off Current
V
CE
=450
V
, I
B
=0
T
a
=25
°
C
T
a
=125
°
C
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
V
EB
=10
V
,
I
C
=0
V
CE
=1
V
,
I
C
=0.8A
T
a
=25
°
C
T
a
=125
°
C
15
10
6
25
14
9
V
CE
=1
V
,
I
C
=2A
T
a
=25
°
C
T
a
=125
°
C
4
6
V
CE
=2.5
V
,
I
C
=1A
T
a
=25
°
C
T
a
=125
°
C
18
14
25
18
V
CE
(sat) Collector-Emitter
Saturation Voltage
I
C
=0.8A, I
B
=0.08A
T
a
=25
°
C
0.35
0.55
0.47
0.9
0.9
1.8
0.22
0.3
0.8
0.65
0.9
0.8
550
60
0.5
0.75
0.75
1.1
1.5
2.5
0.5
0.6
1.0
0.9
V
V
V
V
V
V
V
V
V
V
V
V
pF
pF
MHz
V
V
V
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
I
C
=2A, I
B
=0.4A
I
C
=0.8A, I
B
=0.04A
T
a
=25
°
C
T
a
=125
°
C
I
C
=1A, I
B
=0.2A
T
a
=25
°
C
T
a
=125
°
C
V
BE
(sat) Base-Emitter
Saturation Voltage
I
C
=0.8A, I
B
=0.08A
T
a
=25
°
C
T
a
=125
°
C
I
C
=2A, I
B
=0.4A
T
a
=25
°
C
1.0
0.9
750
100
T
a
=125
°
C
C
ib
C
ob
f
T
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
V
EB
=10
V
,
I
C
=0.5A, f=1MHz
V
CB
=10
V
, I
E
=0, f=1MHz
I
C
=0.5A,V
CE
=10V
11
V
F
I
F
=1A, I
C
=1mA,
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
0.86
0.79
0.95
0.88
1.3
1.5
I
E
=0
I
F
=2A
V
t
fr
Diode Forward Recovery Time
(di/dt=10A/
µ
s)
I
F
=0.4A
I
F
=1A
I
F
=2A
460
360
325
ns
ns
ns
V
CE(DSAT)
Dynamic Saturation Voltage
I
C
=1A, I
B1
=100mA
T
a
=25
°
C
8
15
2.9
8
V
V
V
V
V
V
V
V
V
CC
=300V at 1
µ
s
T
a
=125
°
C
I
C
=1A, I
B1
=100mA
T
a
=25
°
C
V
CC
=300V at 3
µ
s
T
a
=125
°
C
I
C
=2A, I
B1
=400mA
T
a
=25
°
C
9
V
CC
=300V at 1
µ
s
T
a
=125
°
C
17
1.9
8.5
I
C
=2A, I
B1
=400mA
T
a
=25
°
C
V
CC
=300V at 3
µ
s
T
a
=125
°
C
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
2
Electrical Characteristics
(Continued) T
a
=25
°
C unless otherwise noted
Symbol Parameter
Test Condition
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40
µ
s)
Min Typ.
Max. Units
t
ON
t
STG
t
F
Turn On Time
Storage Time
Fall Time
I
C
=2.5A, I
B1
=500mA,
500
750
1.5
200
150
ns
µ
s
ns
ns
ns
µ
s
µ
s
ns
ns
ns
ns
µ
s
µ
s
ns
ns
I
B2
=-1A, V
CC
=250
V
, R
L
= 100
Ω
1.2
100
100
150
1.4
1.7
90
150
120
150
t
ON
Turn On Time
I
C
=2A,
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
I
B1
=400mA,
I
B2
=-1A,
t
STG
t
F
Storage Time
Fall Time
2.2
150
150
2.1
V
CC
=300
V
,
R
L
= 150
Ω
t
ON
t
STG
t
F
Turn On Time
Storage Time
Fall Time
I
C
=2.5A,
I
B1
=500mA,
I
B2
=-5mA,
1.8
V
CC
=300
V
,
2.6
110
160
R
L
= 120
Ω
150
INDUCTIVE LOAD SWITCHING (V
CC
=15V)
t
STG
Storage Time
I
C
=2.5A,
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
T
a
=25
°
C
T
a
=125
°
C
1.9
2.4
160
330
350
750
2.2
200
500
2.25
150
450
0.8
µ
s
µ
s
ns
ns
ns
ns
µ
s
µ
s
ns
ns
ns
ns
µ
s
µ
s
ns
ns
ns
ns
I
B1
=500mA,
I
B2
=-0.5A,
V
Z
=350
V
,
L
C
=300
µ
H
t
F
Fall Time
t
C
Cross-over Time
Storage Time
Fall Time
t
STG
t
F
I
C
=2A,
1.95
I
B1
=400mA,
I
B2
=-0.4A,
V
Z
=300
V
,
L
C
=200
µ
H
2.9
120
270
300
700
0.6
1.0
70
t
C
Cross-over Time
Storage Time
Fall Time
t
STG
t
F
I
C
=1A,
I
B1
=100mA,
I
B2
=-0.5A,
V
Z
=300
V
,
L
C
=200
µ
H
110
80
170
t
C
Cross-over Time
130
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
3
Typical Characteristics
5
100
10
1
I
B
= 1A
V
CE
= 1V
0.9A
0.8A
0.7A
0.6A
0.5A
0.4A
0.3A
0.2A
T
J
= +25
o
C
4
3
2
1
0
T
J
= -25
o
C
T
J
= 125
o
C
I
B
= 0.1A
I
B
= 0
0
2
4
6
8
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
1
10
V
CE
= 5V
T
J
= +25
o
C
I
C
= 5I
B
T
J
= 125
o
C
T
J
= -25
o
C
1
T
J
= 125
o
C
T
J
= +25
O
C
T
J
= -25
o
C
0.1
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturatio
n
V
oltage
10
10
I
C
= 5I
B
I
C
= 10I
B
T
J
= 125
o
C
1
1
T
J
= -25
o
C
T
J
= +25
o
C
T
J
= 125
o
C
T
J
= +25
o
C
T
J
= -25
o
C
0.1
0.1
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
4
Typical Characteristics
(Continued)
10
2000
1000
I
C
= 10I
B
f = 1MHz
C
ib
T
J
= -25
o
C
1
100
T
J
= 125
o
C
C
ob
T
J
= +25
o
C
10
0.1
1
10
100
1E-3
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
REVERSE VOLTAGE [V]
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Collector Output Capacitance
500
10
V
= 250V
I
C
C
=
C
5I
B1
= 2.5I
B2
di/dt = 10A/
µ
S
T
C
= 25
o
C
t
STG
450
1
0.1
400
350
300
250
t
F
0.01
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
1
10
0.2
I
F
[A], FORWARD CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 9. Forward Recovery Time
Figure 10. Switching Time
5
4
3
2
2000
1500
1000
500
0
I
Bon
= I
Boff
I
Bon
= I
Boff
V
= 15V
I
C
= 2A @ T
J
=125
o
C
V
= 15V
V
C
C
= 300V
V
C
C
= 300V
L
C
Z
= 200
µ
H
L
C
Z
= 200
µ
H
I
C
= 2A @ T
J
=125
o
C
I
C
= 1A @ T
J
=125
o
C
I
C
= 1A @ T
J
=125
o
C
I
C
= 2A @ T
J
=25
o
C
I
C
= 2A @ T
J
=25
o
C
I
C
= 1A @ T
J
=25
o
C
I
C
= 1A @ T
J
=25
o
C
0
5
10
15
20
2
4
6
8
10
12
14
16
18
20
h
FE
, FORCED GAIN
h
FE
, FORCED GAIN
Figure 11. Induction Storage Time
Figure 12. Inductive Crossover Time
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
5
Typical Characteristics
(Continued)
1000
100
10
I
Bon
= I
Boff
I
C
= 2A @ T
J
=125
o
C
V
= 15V
V
C
C
= 300V
L
C
Z
= 200
µ
H
800
600
400
200
0
1
µ
s
10
µ
S
5ms
1ms
I
C
= 1A @ T
J
=125
o
C
1
DC
I
C
= 2A @ T
J
=25
o
C
I
C
= 1A @ T
J
=25
o
C
0.1
0.01
2
4
6
8
10
12
14
16
18
20
10
100
1000
h
FE
, FORCED GAIN
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 13. Inductive Fall Time
Figure 14. Safe Operating Area
8
7
6
5
4
3
2
1
0
100
75
50
25
0
Vcc = 50V
V
(off) = -5V
L
C
B
E
= 1mH
Ic = 4 Ib
-5V
200
300
400
500
600
700
800
900
1000 1100
0
25
50
75
100
125
150
175
T
C
[
O
C], CASE TEMPERATURE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 15. Reverse Bias Safe Operating
Figure 16. Power Derating
6
Vcc = 50V
V
(off) = -5V
5
4
3
2
1
0
L
C
B
E
= 1mH
Ic = 5 Ib
Ic = 4 Ib
Ic = 3.3 Ib
Ic = 2.2 Ib
0
1
2
3
4
5
6
7
8
9
10
I
CE
[A], COLLECTOR CURRENT
Figure 17. RBSOA Saturation
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
6
Physical Dimensions
TO-220
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
7
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SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Advance Information
Preliminary
Formative / In Design
First Production
Full Production
Not In Production
No Identification Needed
Obsolete
Rev. I49
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