onsemi-SBSP52T1G
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NPN Small-Signal
Darlington
T
r
ansistor
BSP52T1G, BSP52T3G,
SBSP52T1G
This NPN small signal Darlington transistor is designed for use in
switching applications, such as print hammer, relay, solenoid and lamp
drivers. The device is housed in the SOT-223 package, which is
designed for medium power surface mount applications.
MEDIUM POWER
NPN SILICON
SURFACE MOUNT
Features
•
The SOT-223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
DARLINGTON TRANSISTOR
•
Available in 12 mm Tape and Reel
Use BSP52T1 to Order the 7 Inch/1000 Unit Reel
•
PNP Complement is BSP62T1
COLLECTOR 2,4
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
BASE
1
Compliant
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
EMITTER 3
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
C
MARKING DIAGRAM
4
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Max
80
Unit
V
V
CES
1
2
AYW
AS3
G
G
3
V
CBO
V
EBO
90
V
SOT
−
223
CASE 318E
STYLE 1
5.0
1.0
V
Collector Current
I
C
A
A
Y
= Assembly Location
=
Y
e
ar
= Work Week
= Specific Device Code
= Pb
−
Free Package
P
D
D
@ T
= 25
°
C
0.8
6.4
W
mW/
°
C
A
W
AS3
G
Derate above 25
°
C
P
@ T
= 25
°
C
1.25
10
W
mW/
°
C
A
(Note: Microdot may be in either location)
Derate above 25
°
C
Operating and Storage
T
e
mperature Range
T , T
−
65 to 150
°
C
J
stg
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
†
Device
Package
Shipping
Symbol
Value
Unit
BSP52T1G,
SBSP52T1G
SOT
−
223
(Pb
−
Free)
1000 /
T
a
pe & Reel
4000 /
T
a
pe & Reel
Junction-to-Ambient
R
156
°
C/W
q
JA
BSP52T3G
SOT
−
223
(Pb
−
Free)
Junction-to-Ambient
R
100
°
C/W
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Maximum
T
e
mperature for Soldering
Purposes
Time in Solder Bath
T
L
260
10
°
C
Sec
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device
mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
2
2. Device
mounted on a FR-4 glass epoxy printed circuit board using 1 cm
pad.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2021
−
Rev. 10
BSP52T1/D
BSP52T1G, BSP52T3G, SBSP52T1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(I =
100
m
A, I
= 0)
V
V
V
(BR)CBO
90
5.0
−
−
−
−
−
−
−
C
E
Emitter-Base Breakdown Voltage
(I =
10
m
A, I
= 0)
V
(BR)EBO
E
C
Collector-Emitter Cutoff Current
(V =
80
V
, V
=
0
)
I
m
A
m
A
CES
10
10
CE
BE
Emitter-Base Cutoff Current
(V =
4.0
V
, I
=
0
)
I
EBO
−
EB
C
DC Current Gain
h
FE
−
(I =
150 mA, V
= 10 V)
1000
2000
−
−
−
−
C
CE
(I =
500 mA, V
= 10 V)
C
CE
Collector-Emitter Saturation Voltage
(I =
500 mA, I
= 0.5 mA)
V
V
V
CE(sat)
−
−
−
−
1.3
1.9
C
B
Base-Emitter Saturation Voltage
(I =
500 mA, I
= 0.5 mA)
V
BE(sat)
C
B
SWITCHING CHARACTERISTICS
Rise Time
t
ns
ns
ns
ns
r
(V =
10
V
, I
=
1
50 mA, I
= 0.15 mA)
CC
−
−
−
−
155
205
420
365
−
−
−
−
C
B1
Delay Time
(V =
10
V
, I
=
1
50 mA, I
= 0.15 mA)
CC
t
d
C
B1
Storage Time
t
s
(V =
10
V
, I
=
1
50 mA, I
= 0.15 mA, I
= 0.15 mA)
CC
C
B1
B2
Fall Time
t
f
(V =
10
V
, I
=
1
50 mA, I
= 0.15 mA, I
= 0.15 mA)
CC
C
B1
B2
3. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%
2
BSP52T1G, BSP52T3G, SBSP52T1G
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
1000000
100000
3.5
IC/IB = 1000
V
= 10 V
CE
3.0
2.5
2.0
1.5
1.0
0.5
0
T =
150
°
C
J
T =
25
°
C
J
10000
1000
100
T =
25
°
C
J
T =
150
°
C
J
T =
−
55
°
C
J
T =
−
55
°
C
J
0.01
0.1
1
10
0.01
0.1
1
10
100
1000
10000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain
Figure 2. Collector
−
Emitter Saturation Voltage
2.4
2.0
1.6
1.2
0.8
0.4
0
2.0
1.8
1.6
1.4
1.2
1.0
V
CE
= 10 V
IC/IB = 1000
T =
−
55
°
C
J
T =
−
55
°
C
J
T =
25
°
C
J
T =
25
°
C
J
0.8
0.6
0.4
0.2
0
T =
150
°
C
J
T =
150
°
C
J
0.01
0.1
1
10
100
1000
10000
0.01
0.1
1
10
100
1000 10000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Base
−
Emitter Saturation Voltage
Figure 4. Base
−
Emitter ON Voltage
100
250
230
210
190
170
150
V
= 2 V
CE
T =
25
°
C
J
C
IBO
C
OBO
10
130
110
90
70
50
1
0.1
1
10
100
10
100
I ,
COLLECTOR CURRENT (mA)
1000
V ,
REVERSE VOLTAGE (V)
R
C
Figure 5. Capacitance
Figure 6. Current Gain Bandwidth Product vs.
Collector Current
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1.
ANODE
STYLE 3:
STYLE 4:
PIN 1.
SOURCE
STYLE 5:
PIN 1.
DRAIN
PIN 1.
GATE
2. DRAIN
2. CATHODE
3. NC
2. DRAIN
3. GATE
4. DRAIN
2. GATE
3. SOURCE
4. DRAIN
3. SOURCE
4. GATE
4. CATHODE
STYLE 6:
PIN 1.
RETURN
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
ANODE 1
2. CATHODE
3. ANODE
2
CANCELLED
PIN 1.
INPUT
2. GROUND
3. LOGIC
PIN 1.
CATHODE
2. ANODE
2. INPUT
3. OUTPUT
4. INPUT
3. GATE
4. CATHODE
4. GROUND
4. ANODE
STYLE 11:
PIN 1.
MT 1
STYLE 12:
STYLE 13:
PIN 1.
INPUT
2. OUTPUT
3. NC
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. MT
2
3. GATE
4. MT
2
4. OUTPUT
GENERIC
MARKING DIAGRAM*
AYW
XXXXX
G
G
1
A
Y
= Assembly Location
=
Y
e
ar
W
= Work Week
XXXXX =
Specific Device Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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−
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−
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o
ll Free USA/Canada
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