ElecSuper-2N7002W
| Part # | ElecSuper-2N7002W |
Download  | ElecSuper-2N7002W |
2N7002W
Rev-1.1
SuperMOS – SOT-323 60V BV
DSS
1.5Ω R
DS(on)
0.3A I
D
, N-channel MOSFET
1. Description
The 2N7002W is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product 2N7002W is Pb-free.
2. Features
60V, R
DS(ON)
=1.5Ω(Typ), V
GS
=10V
Material: Halogen free
Reliable and rugged
Avalanche Rated
Use trench MOSFET technology
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Quantity
per reel
Flammability
Rating
Part Number
2N7002W
Package
SOT-323
Material
Packing
Reel Size
7 inches
Halogen
free
Tape &
Reel
3,000 PCS
UL 94V-0
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
D
3
2
Source
Drain
G
1
2
3
S
Table-2 Pin
configuration
Copyright© ElecSuper Incorporated
Contact Us
1
/
7
2N7002W
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Symbol
BV
DSS
V
GS
Limit
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
T
A
=25
℃
T
A
=75
℃
0.3
Continuous Drain Current
I
D
A
0.17
225
Maximum Power Dissipation
Pulsed Drain Current
a
P
D
I
DM
T
J
mW
A
0.88
150
Operating Junction
T
emperature
Lead
T
emperature
°C
°C
°C
T
L
260
Storage
T
emperature Range
T
stg
-55 to 150
Thermal resistance ratings
Single Operation
Parameter
Symbol
R
θJA
Typical
556
Unit
Junction-to-Ambient Thermal Resistance
Note:
°C/W
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
Copyright© ElecSuper Incorporated
Contact Us
2
/
7
2N7002W
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
OFF CHARACTERISTICS
BV
DSS
V
GS
=0V, I
D
=10mA
Test Conditions
Min. Typ. Max. Unit
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
60
V
V
DS
=60V, V
GS
=0V,TJ=25
℃
V
DS
=48V, V
GS
=0V
，
TJ=125
℃
V
DS
=0V, V
GS
=±20V
1.0
I
DSS
uA
100
Gate-to-source Leakage Current
Forward Trans conductance
I
GSS
g
fs
±10 uA
0.24 S
V
DS
=10V, I
D
=0.1A
ON CHARACTERISTICS
V
GS(TH)
V
GS
=V
DS
, I
D
=250uA
Gate Threshold Voltage
0.8 1.5 2.5
V
V
GS
=10V, I
D
=0.3A
V
GS
=4.5V, I
D
=0.2A
1.5
2.4
3
4
Drain-to-source On-resistance
R
DS(on)
Ω
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
30.5 45
5.5 10
Output Capacitance
C
OSS
C
RSS
Q
G(TOT)
Q
GS
V
GS
=0V, f=1MHz, V
DS
=10V
V
GS
=10V, V
DS
=30V, I
D
=0.2A
pF
Reverse Transfer Capacitance
Total Gate Charge
4.1
8
2
1.12
Gate-to-Source Charge
Gate-to-Drain Charge
0.1 0.2 nC
0.23 0.5
Q
GD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
t
r
t
d(OFF)
t
f
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=1A
3
5
6
10
27
17
V
GS
=10V, V
DS
=30V, I
D
=0.2A,
R
G
=6Ω
ns
V
Turn-Off Delay Time
Fall Time
14
9
Forward Voltage
1
Copyright© ElecSuper Incorporated
Contact Us
3
/
7
2N7002W
Rev-1.1
7. Typical
Characteristic
Copyright© ElecSuper Incorporated
Contact Us
4
/
7
2N7002W
Rev-1.1
8. Dimension
(SOT-323)
θ
D
b
L1
3
E1
E
1
2
L
e
C
e1
A1
A
Units: mm
Dimensions
Dimensions
Symbol
Symbol
Min.
Max.
1.100
1.000
0.400
0.150
2.200
1.350
Min.
2.150
Max.
2.450
A
A1
b
c
D
E
0.900
0.900
0.200
0.080
2.000
1.150
E1
e
e1
L
L1
θ
0.650TYP
0.525REF
1.200
1.400
0.260
0.460
0
°
8
°
0.5
Note:
1. Controlling
dimension: in millimeters
2. General
tolerance:
±
0.05mm
3. The
pad layout is for reference only
4. Unit:
mm
0.8
2.2
1.3
Copyright© ElecSuper Incorporated
Contact Us
6
/
7
2N7002W
Rev-1.1
DISCLAIMER
ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES
(INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, SAFETY INFORMATION, AND
OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED,
INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for
(1) selecting the appropriate ElecSuper products for your application;
(2) designing, validating and testing your application;
(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for
development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of
these resources are prohibited. No license is granted to any other ElecSuper intellectual property right or to any third party
intellectual property right. ElecSuper disclaims responsibility for, and you will fully indemnify ElecSuper and its representatives
against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. ElecSuper’s products
provided in conjunction with such ElecSuper products. ElecSuper’s provision of these resources does not expand or otherwise
alter ElecSuper’s applicable warranties or warranty disclaimers for ElecSuper products.
Copyright© ElecSuper Incorporated
Contact Us
7
/
7
