ElecSuper-AO3401A
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AO3401A
Rev-1.2
SuperMOS – SOT23-3L -30V BV
DSS
, 40m
Ω
R
DS(on)
,-4.5A I
D
P-channel MOSFET
1. Description
The AO3401A is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product AO3401A is Pb-free.
2. Features
-30V, R
DS(ON)
=40mΩ(Typ), V
GS
=-10V
Fast Switching
Material: Halogen free
Reliable and rugged
Avalanche Rated
High density cell design for low R
DS(on)
Low leakage current
3. Applications
PWM applications
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering
Information
Part Number
AO3401A
Package
SOT23-3L
Material
Quantity per reel
3,000 PCS
Flammability Rating
UL 94V-0
Halogen free
Table-1 Ordering
information
5. Pin
Configuration and Functions
Pin
1
Function
Gate
Outline
Circuit Diagram
3
2
Source
Drain
1
2
3
Table-2 Pin
configuration
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AO3401A
Rev-1.2
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
-30
Unit
V
Gate-Source Voltage
±12
V
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
-4.5
Continuous Drain Current
I
D
A
-3.5
1.4
Maximum Power Dissipation
P
D
W
0.9
Pulsed Drain Current
I
DM
T
J
-30
A
Operating Junction
T
emperature
Storage
T
emperature Range
150
°C
°C
T
stg
-55 to +150
Thermal resistance ratings
Single Operation
Parameter
Symbol
Typical
Unit
Junction-to-Ambient Thermal Resistance
a
Junction-to-Case Thermal Resistance
R
θJA
R
θJC
90
60
°C/W
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AO3401A
Rev-1.2
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
-30
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=-250uA
V
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
-1
uA
nA
I
GSS
±100
ON CHARACTERISTICS
V
GS(TH)
V
GS
=V
DS
, I
D
=-250uA
Gate Threshold Voltage
-0.5
-0.8
40
-1.1
60
V
V
GS
=-10V, I
D
=-4.5A
V
GS
=-4.5V, I
D
=-3A
Drain-to-source On-resistance
R
DS(on)
mΩ
53
78
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
954
115
77
6
V
GS
=0V
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
OSS
C
RSS
R
g
V
DS
=-15V
f=1MHz
pF
Ω
f=1MHZ
Total Gate Charge
Q
G(TOT)
Q
GS
9.4
2
V
GS
=-4.5V
V
DS
=-15V
I
D
=-4A
Gate-to-Source Charge
Gate-to-Drain Charge
nC
Q
GD
3
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
d(ON)
6.3
3.2
V
GS
=-10V
t
r
t
d(OFF)
t
f
V
DS
=-15V
R
L
=3.6Ω
R
G
=6Ω
ns
Turn-Off Delay Time
Fall Time
38.2
12
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
t
rr
V
GS
=0V, I
S
=-1.0A
-0.8
32
-1
V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
V
GS
=0V, I
SD
=-4A,
d
i
/d
t
=100A/us
Q
rr
11
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AO3401A
Rev-1.2
7. Typical
Characteristic
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AO3401A
Rev-1.2
8. Dimension
(SOT23-3L)
D
b
θ
3
L
E1
E
1
2
e
C
e1
A1
A2
A
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
Dimensions
Dimensions
0.95TYP
Symbol
Symbol
Min.
1.05
0
Max.
1.25
0.10
1.15
0.50
0.20
3.02
Min.
1.50
2.65
Max.
1.70
2.95
A
A1
A2
b
E
E1
e
1.05
0.30
0.10
2.82
e1
L
1.80
0.30
0
°
2.00
0.60
8
°
c
D
θ
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AO3401A
Rev-1.2
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(3) ensuring your application meets applicable standards, and any other safety, security, or other requirements.
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