onsemi-2N7000
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DATA SHEET
D
S
N-Channel Enhancement
Mode Field Effect
Transistor
G
2N7000, 2N7002,
NDS7002A
Description
These N
−
channel enhancement mode field effect transistors are
produced using
onsemi
’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on
−
state
resistance while providing rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to
400 mAdc and can deliver pulsed currents up to 2 A. These products
are particularly suited for low
−
voltage, low
−
current applications, such
as small servo motor control, power MOSFET gate drivers, and other
switching applications.
1
−
Source
2
−
Gate
3
−
Drain
1
1
2
2
3
3
TO
−
92
CASE 135AN
TO
−
92
CASE 135AR
MARKING DIAGRAM
Features
•
High Density Cell Design for Low R
DS(on)
$Y&Z&3
2N
7000
•
V
o
ltage Controlled Small Signal Switch
•
Rugged and Reliable
•
High Saturation Current Capability
•
This Device is Pb
−
Free and Halogen Free
$Y
&Z
&3
= Logo
= Assembly Plant Code
= Date Code
2N7000 =
Specific Device Code
3
1
−
Gate
2
−
Source
3
−
Drain
1
2
SOT
−
23
CASE 318
−
08
MARKING DIAGRAM
&E&Y
7×2&E&G
&E
&Y
7×2
= Designates Space
= Binary Calendar Year Coding Scheme
= Specific Device Code
x= 0, 1
&G
= Date Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 1998
1
Publication Order Number:
July, 2022
−
Rev. 7
NDS7002A/D
2N7000, 2N7002, NDS7002A
ABSOLUTE MAXIMUM RATINGS
Values are at T
= 25
°
C unless otherwise noted.
C
Value
2N7002
60
2N7000
NDS7002A
Symbol
Parameter
Unit
V
V
DSS
Drain
−
to
−
Source Voltage
V
DGR
Drain
−
Gate Voltage (R
≤
1 MW)
60
V
GS
V
GSS
Gate
−
Source Voltage
−
Continuous
20
V
Gate
−
Source Voltage
−
Non Repetitive (tp < 50 ms)
Maximum Drain Current
−
Continuous
Maximum Drain Current
−
Pulsed
40
I
200
500
400
3.2
115
800
200
1.6
280
1500
mA
D
P
Maximum Power Dissipation Derated above 25
°
C
300
mW
mW/
°
C
°
C
D
2.4
T , T
Operating and Storage
T
e
mperature Range
−
55 to 150
−
65 to 150
J
STG
T
L
Maximum Lead
T
e
mperature for Soldering Purposes,
1/16
−
inch from Case for 10 s
300
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Values are at T
= 25
°
C unless otherwise noted.
C
Value
2N7000
2N7002
NDS7002A
Symbol
Parameter
Unit
R
Thermal Resistance, Junction to Ambient
312.5
625
417
°
C/W
θ
JA
ELECTRICAL CHARACTERISTICS
Values are at T
= 25
°
C unless otherwise noted.
C
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
I
Drain
−
Source Breakdown
V
V
= 0
V
, I
=
1
0
m
A
All
60
−
−
V
DSS
GS
D
Voltage
Zero Gate Voltage Drain
Current
= 48
V
, V
= 0 V
2N7000
−
−
−
−
1
1
m
A
DSS
DS
GS
V
T
= 48
V
, V
= 0 V,
mA
DS
C
GS
= 125
°
C
V
DS
= 60
V
, V
= 0 V
2N7002
NDS7002A
−
−
−
−
1
m
A
GS
V
T
= 60
V
, V
= 0 V,
0.5
mA
DS
C
GS
= 125
°
C
I
Gate
−
Body Leakage,
Forward
V
V
= 15
V
, V
= 0 V
2N7000
−
−
−
−
10
nA
nA
GSSF
GS
DS
= 20
V
, V
= 0 V
2N7002
NDS7002A
100
GS
DS
I
Gate
−
Body Leakage,
Reverse
V
V
=
−
15
V
, V
= 0 V
2N7000
−
−
−
−
−
10
GSSR
GS
DS
=
−
20
V
, V
= 0 V
2N7002
NDS7002A
−
100
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
V
= V
, I
= 1 mA
2N7000
0.8
1
2.1
2.1
3
V
GS(th)
DS
GS
D
= V
, I
= 250
m
A
2N7002
NDS7002A
2.5
DS
GS
D
2
2N7000, 2N7002, NDS7002A
ELECTRICAL CHARACTERISTICS
(continued)
Values are at T
= 25
°
C unless otherwise noted.
C
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Unit
ON CHARACTERISTICS
R
Static Drain
−
Source
On
−
Resistance
V
V
= 10
V
, I
=
5
00 mA
2N7000
−
−
1.2
1.9
5
9
W
DS(on)
GS
D
= 10
V
, I
=
5
00 mA,
GS
D
T
= 125
°
C
C
V
V
V
= 4.5
V
, I
=
7
5 mA
−
−
−
1.8
1.2
1.7
5.3
7.5
GS
GS
GS
D
= 10
V
, I
=
5
00 mA
2N7002
D
= 10
V
, I
=
5
00 mA,
13.5
D
T
= 100
°
C
C
V
V
= 5
V
, I
=
5
0 mA
−
−
1.7
2.4
7.5
GS
D
= 5
V
, I
=
5
0 mA,
13.5
GS
D
T
= 100
°
C
C
V
V
= 10
V
, I
=
5
00 mA
NDS7002A
−
−
1.2
2
2
GS
D
= 10
V
, I
=
5
00 mA,
3.5
GS
D
T
= 125
°
C
C
V
V
= 5
V
, I
=
5
0 mA
−
−
1.7
2.8
3
5
GS
D
= 5
V
, I
=
5
0 mA,
GS
D
T
= 125
°
C
C
V
Drain
−
Source On
−
Voltage
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
V
DS
V
DS
= 10
V
, I
=
5
00 mA
2N7000
2N7002
−
−
0.6
0.14
0.6
2.5
0.4
3.75
1.5
1
V
DS(on)
D
= 4.5
V
, I
=
7
5 mA
D
= 10
V
, I
=
5
00 mA
−
D
= 5.0
V
, I
=
5
0 mA
−
0.09
0.6
D
= 10
V
, I
=
5
00 mA
NDS7002A
−
D
= 5.0
V
, I
=
5
0 mA
−
0.09
600
2700
2700
320
320
320
0.15
−
D
I
On
−
State Drain Current
= 4.5
V
, V
=
1
0 V
2N7000
2N7002
75
500
500
100
80
80
mA
mS
D(on)
DS
= 10
V
, V
≥
2 V
−
DS
DS(on)
= 10
V
, V
≥
2 V
NDS7002A
2N7000
−
DS
DS(on)
g
FS
Forward Transconductance
= 10
V
, I
=
2
00 mA
−
D
≥
2 V
≥
2 V
,
I =
200 mA
2N7002
−
DS(on)
D
, I
= 200 mA
DS(on)
NDS7002A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Output Capacitance
V
= 25
V
, V
= 0 V,
All
All
All
−
−
−
20
11
4
50
25
5
pF
ns
iss
DS
GS
f = 1.0 MHz
C
oss
C
Reverse Transfer
Capacitance
rss
t
on
Turn
−
On Time
2N7000
−
−
−
−
−
−
−
−
V
D
R
= 15
V
, R
=
2
5
W
,
L
DD
I
= 500 mA, V
= 10
V
,
GS
10
20
10
20
= 25
W
GEN
V
D
R
= 30
V
, R
=
1
50
W
,
2N7002
NDS7002A
DD
L
I
= 200 mA, V
= 10
V
,
GS
= 25
W
GEN
t
off
Turn
−
Off Time
2N7000
ns
V
D
R
= 15
V
, R
=
2
5
W
,
DD
L
I
= 500 mA, V
= 10
V
,
GS
= 25
W
GEN
V
D
R
= 30
V
, R
=
1
50
W
,
2N7002
NDS7002A
DD
L
I
= 200 mA, V
= 10
V
,
GS
= 25
W
GEN
3
2N7000, 2N7002, NDS7002A
ELECTRICAL CHARACTERISTICS
(continued)
Values are at T
= 25
°
C unless otherwise noted.
C
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Unit
mA
A
DRAIN
−
SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain
−
Source Diode Forward Current
Maximum Pulsed Drain
−
Source Diode Forward Current
2N7002
NDS7002A
2N7002
−
−
−
−
−
−
−
115
280
0.8
1.5
1.5
I
−
SM
NDS7002A
2N7002
−
V
SD
Drain
−
Source Diode
Forward Voltage
V
= 0
V
, I
= 115 mA
0.88
V
GS
S
V
= 0
V
, I
=
4
00 mA
NDS7002A
−
0.88
1.2
GS
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
test: Pulse Width
≤
300
m
s, Duty Cycel
≤
2 %
TYPICAL PERFORMANCE CHARACTERISTICS
2
1.5
1
3
2.5
2
9.0
8.0
V
GS
= 10 V
V = 4.0
7.0
6.0
4.5
5.0
6.0
7.0
8.0
5.0
4.0
1.5
9.0
10
0.5
0
1
3.0
0.5
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
V
DS
, Drain
−
Source Voltage (V)
I ,
Drain Current (A)
D
Figure 1. On
−
Region Characteristics
Figure 2. On
−
Resistance Variation with
Gate Voltage and Drain Current
2
3
2.5
2
V
GS
V
= 10 V
= 500 mA
GS
1.75
1.5
1.25
1
I
D
T =
125
°
C
J
1.5
1
25
°
C
−
55
°
C
0.75
0.5
0.5
0
−
50
−
25
0
25
50
75
100 125
150
0
0.4
0.8
1.2
1.6
2
T ,
Junction Temperature (
5
C)
J
I ,
Drain Current (A)
D
Figure 3. On
−
Resistance Variation with
Figure 4. On
−
Resistance Variation with
Temperature
Drain Current and Temperature
4
2N7000, 2N7002, NDS7002A
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
2
1.1
25
°
C
V
DS
= 10 V
V =
V
DS GS
1.05
I = 1 mA
1.6
125
°
C
1
T =
−
55
°
C
1.2
0.95
0.9
0.8
0.4
0
0.85
0.8
0
2
4
6
8
10
−
50
−
25
0
25
50
75
100 125
150
V
GS
, Gate to Source Voltage (V)
T ,
Junction Temperature (
5
C)
J
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
1.100
1.075
1.050
1.025
1.000
0.975
0.950
0.925
2
1
V
GS
= 0 V
I
= 250
m
A
D
0.5
T = 125
°
C
25
°
C
0.1
0.05
−
55
°
C
0.01
0.005
0.001
1.2
, Body Diode Forward Voltage (V)
1.4
−
50
−
25
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1
T ,
Junction Temperature (
5
C)
J
V
SD
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage
Variation with
10
8
60
40
V
DS
= 25 V
C
iss
20
10
C
oss
6
I = 500 mA
4
2
5
C
rss
280 mA
115 mA
2
1
f = 1 MHz
V = 0 V
0
1
2
3
5
10
20
30
50
0
0.4
0.8
1.2
1.6
2
Q ,
Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
5
2N7000, 2N7002, NDS7002A
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
t
on
V
DD
t
off
t
t
t
t
d(off)
d(on)
R
r
f
L
V
IN
90%
90%
V
OUT
D
V
GS
Output, V
out
10%
10%
R
DUT
GEN
Inverted
G
90%
50%
50%
S
Input, V
in
10%
Pulse Width
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
3
2
3
2
100
m
s
1
1
R
Limit
DS(on)
100
m
s
1 ms
0.5
0.5
R
Limit
DS(on)
1 ms
0.1
0.1
100 ms
10 ms
10 ms
100 ms
DC
0.05
0.05
1 s
V
= 10 V
V
= 10 V
GS
GS
10 s
1 s
Single Pulse
T =
25
°
C
Single Pulse
T =
25
°
C
10 s
DS
0.01
0.01
A
A
0.005
0.005
1
2
10
20 30
60 80
1
2
5
10
20 30
60 80
5
V
DS
, Drain
−
Source Voltage (V)
V
DS
, Drain
−
Source Voltage (V)
Figure 13. 2N7000 Maximum Safe Operating Area
Figure 14. 2N7002 Maximum Safe Operating Area
3
2
R
Limit
100
m
s
DS(on)
1
1 ms
0.5
0.1
10 ms
100 ms
0.05
1 s
V
GS
= 10 V
Single Pulse
T =
25
°
C
A
DC
10 s
0.01
0.005
1
2
5
10
20 30
60 80
V
DS
, Drain
−
Source Voltage (V)
Figure 15. NDS7000A Maximum Safe Operating Area
6
2N7000, 2N7002, NDS7002A
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
1
D = 0.5
0.2
0.5
(t)
R
R
= r(t) * R
q
JA
0.2
0.1
q
JA
= (See Datasheet)
q
JA
0.1
0.05
P(pk)
0.05
t
0.02
0.01
1
t
2
(t)
T
−
T =
P * R
q
JA
Duty Cycle, D = t
/t
0.02
0.01
J
A
Single Pulse
0.001
1
2
0.0001
0.01
0.1
t ,
Time (s)
1
10
100
300
1
Figure 16. TO
−
92, 2N7000 Transient Thermal Response Curve
1
0.5
D = 0.5
0.2
0.1
0.2
0.1
(t)
R
R
= r(t) * R
q
JA
q
q
JA
JA
= (See Datasheet)
0.05
0.05
P(pk)
0.02
0.01
0.01
t
1
t
2
(t)
T
−
T =
P * R
q
JA
J
A
0.002
0.001
Duty Cycle, D = t
/t
Single Pulse
0.0001 0.001
1
2
0.01
0.1
t ,
Time (s)
1
10
100
300
1
Figure 17. SOT
−
23, 2N7002 / NDS7002A Transient Thermal Response Curve
ORDERING INFORMATION
Min Order Qty /
†
Immediate Pack Qty
10000 / 1000
2000 / 2000
Part Number
2N7000
Marking
Package
Packing Method
2N7000
TO
−
92 3L
(Pb
−
Free)
Bulk
2N7000
−
D74Z
2N7000
−
D75Z
2N7000
−
D26Z
2N7002
Ammo
T
a
pe and Reel
2000 / 2000
2000 / 2000
702
712
SOT
−
23 3L
(Pb
−
Free)
T
a
pe and Reel
3000 / 3000
NDS7002A
3000 / 3000
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
92 3 4.825×4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO
−
92 3 4.825X4.76
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
92 3 4.83×4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO
−
92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
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