TWGMC-BC817-25
| Part # | TWGMC-BC817-25 |
Download  | TWGMC-BC817-25 |
BC817
BC817
TRANSISTOR(NPN)
FEATURE
F
o
r general AF applications
High collector current
SOT-23
High current gain
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
Low collector-emitter saturation voltage
Complementary types: BC807 (PNP)
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
V
CBO
50
V
V
CEO
V
EBO
I
C
45
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
0.5
A
P
C
0.3
W
℃
℃
Tj
150
-55-150
T
stg
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified
)
TYP
Parameter
Symbol
Test conditions
I
C
= 10
μ
A, I
E
=0
MIN
50
45
5
MAX
UNIT
V
CB
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
O
V
CE
I
C
= 10mA,
I
B
=0
O
V
EBO
I
E
= 1
μ
A, I
C
=0
V
µA
I
CB
V
CB
= 45 V,
I
E
=0
0.1
0.1
O
µA
I
EBO
V
EB
= 4V,
I
C
=0
Emitter cut-off current
h
FE(1)
h
FE(2)
CE
(sat)
V
CE
= 1
V
,
I
C
= 100mA
V
CE
= 1V,
I
C
= 500mA
I
C
= 500mA,
I
B
= 50mA
I
C
= 500mA,
I
B
= 50mA
V
CE
= 1
V
,
I
C
= 500mA
V
CB
=10V, f=1MHz
100
40
600
DC current gain
V
0.7
1.2
1.2
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
BE
(sat)
V
BE
10
C
ob
Collecter capactiance
pF
V
CE
= 5
V
,
I
C
= 10mA
f=100MHz
f
T
100
MHz
Transition frequency
CLASSIFICATION OF
h
FE
(1)
Rank
Range
Marking
BC817-16
BC817-25
160-400
6B
BC817-40
100-250
6A
250-600
6C
1
BC817
TYPICAL CHARACTERISTICS
400
1000
See Note 1
T
A
= 25
°
C
f = 20MHz
300
200
100
0
V
CE
= 5V
1V
100
10
1
10
100
1000
0
100
SB
, SUBSTRATE TEMPERATURE (
°
C)
200
I
C
, COLLECTOR CURRENT (mA)
T
.
Fig 1, Power
Derating Curve
Fig. 2,
Gain-Bandwidth Product vs Collector Current
0.5
0.4
0.3
1000
V
CE
= 1V
typical
limits
at T
A
= 25
°
C
I
C
/ I
B
= 10
150
°
C
T
A
= 25
°
C
-50
°
C
100
0.2
0.1
25
°
C
-50
°
C
150
°
C
10
0
0.1
100
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 3,
Collector Sat. Voltage vs Collector Current
1000
0.1
1000
1
10
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 4,
DC Current Gain vs Collector Current
500
400
300
100
3.2
2.8
0.35
0.3
2.4
80
2
1.8
1.6
1.4
0.25
60
40
0.2
1.2
0.8
0.15
200
100
0
0.6
0.4
0.1
20
0
I
B
= 0.05mA
I
B
= 0.2mA
0
10
20
0
1
2
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5,
Typical Emitter-Collector Characteristics
Fig. 6,
Typical Emitter-Collector Characteristics
2
