onsemi-BSS63LT1G
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High Voltage Transistor
PNP Silicon
BSS63LT1G,
NSVBSS63LT1G
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Collecto
r
−
Emitter Voltage
Collecto
r
−
Emitter Voltage
Symbol
Value
Unit
Vdc
Vdc
2
EMITTER
V
−
100
CEO
CER
V
R
= 10 k
W
−
110
−
100
BE
3
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
1
2
Symbol
Max
Unit
SOT
−
23
CASE 318
STYLE 6
T
o
tal Device Dissipation FR
−
5 Board,
P
mW
D
225
1.8
A
Derate above 25
°
C
mW/
°
C
°
C/W
mW
Thermal Resistance Junction
−
to
−
Ambient
R
556
q
JA
MARKING DIAGRAM
T
o
tal Device Dissipation
P
D
T =
25
°
C
300
2.4
mW/
°
C
A
Derate above 25
°
C
BM M
G
G
Thermal Resistance, Junction
−
to
−
Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
T , T
J
−
55 to
+150
stg
BM
M
G
= Device Code
= Date Code*
= Pb
−
Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
5 = 1.0 x 0.75 x 0.062 in.
(Note: Microdot may be in either location)
2. Alumina
= 0.4 x 0.3 x 0.024 in. 99.5% alumina.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
BSS63LT1G
SOT
−
23
3000 /
T
a
pe & Reel
(Pb
−
free)
NSVBSS63LT1G
SOT
−
23
3000 /
T
a
pe & Reel
(Pb
−
free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
February, 2021
−
Rev. 9
BSS63LT1/D
BSS63LT1G, NSVBSS63LT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
C
V
Vdc
Vdc
(BR)CEO
(BR)CER
(BR)CBO
(BR)EBO
(I =
−
100
m
Adc)
−
100
−
110
−
110
−
6.0
−
−
−
−
−
−
−
−
−
−
Collecto
r
−
Emitter Breakdown Voltage
V
V
V
(I =
−
10
m
Adc, I
= 0, R
= 10 k
W
)
C
E
BE
Collecto
r
−
Base Breakdown Voltage
(I =
−
10
m
Adc, I
= 0)
Vdc
−
E
E
Emitte
r
−
Base Breakdown Voltage
(I =
−
10
m
Adc)
E
Vdc
−
Collector Cutoff Current
I
nAdc
m
Adc
nAdc
CBO
(V =
−
90 Vdc, I
= 0)
−
100
−
10
−
200
CB
E
Collector Cutoff Current
(V =
−
110 Vdc, R
= 10 k
W
)
I
I
CER
−
CE
BE
Emitter Cutoff Current
(V =
−
6.0 Vdc, I
= 0)
EBO
−
EB
C
ON CHARACTERISTICS
DC Current Gain
C
(I =
−
25 mAdc, V
=
−
1.0 Vdc)
C
h
FE
−
(I =
−
10 mAdc, V
=
−
1.0 Vdc)
30
30
−
−
−
−
CE
CE
Collecto
r
−
Emitter Saturation Voltage
(I =
−
25 mAdc, I
=
−
2.5 mAdc)
V
mVdc
mVdc
CE(sat)
−
−
−
−
−
250
−
900
C
B
Bas
e
−
Emitter Saturation Voltage
(I =
−
25 mAdc, I
=
−
2.5 mAdc)
V
BE(sat)
C
B
SMALL
−
SIGNAL CHARACTERISTICS
Curren
t
−
Gain
−
Bandwidth Product
f
MHz
pF
T
(I =
−
25 mAdc, V
=
−
5.0 Vdc, f = 20 MHz)
50
−
95
−
−
C
CE
Case Capacitance
(I =
I =
0, V
=
−
10 Vdc, f = 1.0 MHz)
C
C
20
E
C
CB
Noise Figure
(I =
−
0.2 mA, V
=
−
5.0 Vdc, R
= 2 k
W
, f = 1.0 kHz, BW = 200 Hz)
NF
dB
−
−
10
C
CE
g
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
2
BSS63LT1G, NSVBSS63LT1G
TYPICAL CHARACTERISTICS
1000
100
10
1
V
=
−
5 V
I /I
= 10
C B
CE
150
°
C
25
°
C
−
55
°
C
0.1
150
°
C
−
55
°
C
25
°
C
0.01
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
Figure 2. Collector
−
Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
I /I
= 10
V
CE
=
−
5 V
C
B
−
55
°
C
25
°
C
−
55
°
C
25
°
C
150
°
C
150
°
C
1
10
100
1000
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Base
−
Emitter Saturation Voltage vs.
Figure 4. Base
−
Emitter Voltage vs. Collector
Collector Current
Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2.6
I /I
= 10
T =
25
°
C
A
C
B
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
T =
−
55
°
C to 150
°
C
A
50 mA
20 mA
I
= 200 mA
100 mA
C
I
= 10 mA
C
0.1
1
10
100
1000
0.01
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (mA)
B
Figure 5. Base
−
Emitter Temperature
Figure 6. Collector Saturation Region
Coefficient
3
BSS63LT1G, NSVBSS63LT1G
TYPICAL CHARACTERISTICS
1000
100
10
1
C
ibo
T =
25
°
C
V
=
−
5 V
J
CE
T =
25
°
C
J
100
10
1
C
obo
0.1 0.2
0.5
1
2
5
10 20
50 100
0.1 0.2
0.40.6
1
2
4
6
10 20
40 60 100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (V)
R
Figure 7. Capacitance
Figure 8. Current
−
Gain Bandwidth Product
1000
10 ms
100
10
1
100
m
s
1 s
Single Pulse
T
e
st at T
= 25
°
C
A
0.1
0.1
1
10
100
1000
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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