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August 2014
FDM3622
N-Channel PowerTrench
®
MOSFET
100V, 4.4A, 60m
Ω
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
Max r
DS(on)
= 60m
Ω
at V
GS
= 10V, I
D
= 4.4A
Max r
DS(on)
= 80m
Ω
at V
GS
= 6.0V, I
D
= 3.8A
Low Miller Charge
®
Low QRR Body Diode
Applications
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
Distributed Power Architectures and VRMs.
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Formerly developmental type 82744
Bottom
Top
S
Pin 1
D
G
S
S
S
S
G
D
D
D
S
D
D
D
D
MLP 3.3×3.3
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
100
±20
V
V
Drain Current
-Continuous
-Pulsed
(Note 1a)
4.4
I
D
A
20
E
AS
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
54
mJ
W
2.1
P
D
Power Dissipation
0.9
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
3.0
60
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12 mm
Quantity
FDM3622
FDM3622
MLP 3.3×3.3
3000 units
1
©2014 Fairchild Semiconductor Corporation
FDM3622 Rev.C6
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
100
V
V
DS
= 80V, V
GS
= 0V
T
J
= 100°C
1
I
DSS
μ
A
nA
250
±100
I
GSS
V
GS
= ±20V, V
DS
= 0V
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
2
4
V
V
GS
= 10
V
,
I
D
= 4.4A
44
56
92
60
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 6.0
V
,
I
D
= 3.8A
80
m
Ω
V
GS
= 10
V
,
I
D
= 4.4A , T
J
= 150°C
120
Dynamic Characteristics
C
iss
C
oss
C
rss
Rg
Input Capacitance
820
125
35
1090
170
55
pF
pF
pF
Ω
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15mV, f = 1MHz
0.1
3.1
6.2
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
11
25
35
26
13
3.6
20
40
56
42
17
ns
ns
ns
ns
nC
nC
V
DD
= 50
V
,
I
D
= 4.4A
V
GS
= 10V, R
GEN
= 24
Ω
Turn-Off Delay Time
Fall Time
Q
g
T
o
tal Gate Charge
Gate to Source Gate Charge
V
GS
= 10V
V
DD
= 50V
I
D
= 4.4A
Q
gs
Q
gd
Gate to Drain “Miller” Charge
3.4
nC
Drain-Source Diode Characteristics
V
GS
= 0V, I
S
= 4.4A
1.25
1.0
56
V
V
V
SD
Source to Drain Diode
Forward Voltage
V
GS
= 0V, I
S
= 2.2A
t
rr
Reverse Recovery Time
ns
nC
I
F
= 4.4A, di/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
108
Notes:
2
1:
R
is determined with the device mounted on a 1 in
oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by the
θ
JA
θ
JA
θ
JC
user’s board design.
2
(a)R
(b)R
= 60°C/W when mounted on a 1 in
pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
= 135°C/W when mounted on a minimum pad of 2 oz copper.
θ
JA
θ
JA
a. 60°C/W when mounted
on
a1
i
n pad
of 2 oz copper
b. 135°C/W when mounted on
a
minimum pad of 2 oz copper
2
2:
Pulse
T
e
st: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3:
E of
54 mJ is based on starting T
= 25 C; N-ch: L = 3 mH, I
= 6 A,
V =
100 V, V
= 10 V.
AS
J
AS
DD
GS
2
FDM3622 Rev.C6
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
2.5
2.0
1.5
1.0
PULSE DURATION = 80
μ
s
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
o
V
= 10V
GS
T
= 25
C
A
8
6
4
V
= 5V
GS
V
= 4.7V
= 4.5V
GS
V
GS
2
0
0.5
0
V
= 10V, I
= 4.4A
D
GS
0
0.5
1.0
1.5
2.0
2.5
3.0
10
15
-80
-40
0
40
80
120
o
160
V
, DRAIN TO SOURCE VOLTAGE (V)
T ,
JUNCTION TEMPERATURE (
C)
J
DS
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Junction Temperature
80
10
8
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
= 15V
DD
70
60
I
= 4.4A
D
6
o
T
= 150
C
J
4
o
I
= 0.2A
D
T
= -55
C
J
o
T
= 25
C
J
50
40
2
0
4
6
8
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
, GATE TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On-Resistance vs Gate to
Source Voltage
Figur
e
4
. Transfe
r
C
haracteristics
10
8
1200
1000
V
= 50V
DD
C
=
C +
C
GS GD
ISS
C
≅
C +
C
GD
OSS
DS
6
100
C
=
C
RSS
GD
4
WAVEFORMS IN
DESCENDING ORDER:
2
I
I
= 4.4A
= 1A
D
D
V
= 0
V
, f =
1
MHz
1
GS
10
0
0
3
6
9
12
0.1
10
100
Q ,
GATE CHARGE (nC)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
g
Figure 5.
Gate Charge Characteristics
F i g u r e 6 .
C a p a c i t a n c e v s D r a i n
to Source Voltage
3
FDM3622 Rev.C6
Typical Characteristics
T
J
= 25°C unless otherwise noted
20
10
50
If R = 0
= (L)(I
)/(1.3*RATED BV
t
AV
– V
DD
)
10
AS
DSS
If R
≠
0
t
AV
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
DD
AS
DSS
100us
1
1 ms
o
STARTING T
= 25
C
J
10 ms
100 ms
1 s
THIS AREA IS
LIMITED BY r
DS(on)
0.1
0.01
SINGLE PULSE
T
J
= MAX RATED
θ
JA
= 135
o
C/W
10 s
DC
R
o
STARTING T
= 150
C
J
T
A
= 25
o
C
0.001
1
0.1
1
10
100
400
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN to SOURCE VOLTAGE (V)
t
, TIME IN AVALANCHE (ms)
AV
Figur
e
7
. Forward Bias Safe
Operating Area
Figur
e
8
. Uncalamped Inductive
Switching Capability
1.2
1.0
0.8
0.6
0.4
0.2
6
4
V
= 10V
GS
2
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
o
o
T
, AMBIENT TEMPERATURE (
C)
T ,
AMBIENT TEMPERATURE (
C)
A
A
Figure 9. Normalized Power dissipation
vs Ambient Temperature
Fi g ure 1 0.
Maxi mu m
C on ti n uo us Dr ai n Cu rren t
vs Ambient Temperature
1.2
1.2
V
= V
, I
= 250
μ
A
DS D
GS
I
= 250
μ
A
D
1.0
0.8
0.6
1.1
1.0
0.9
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
o
o
T ,
JUNCTION TEMPERATURE (
C)
T ,
JUNCTION TEMPERATURE (
C)
J
J
Figur
e
1
1. Normalized Gate Threshold voltage
vs Junction Temperature
Figure 12.
Normalized Drain to Source Breakdown
Voltage vs Junction Temperature
4
FDM3622 Rev.C6
Typical Characteristics
T
J
= 25°C unless otherwise noted
500
V
GS
= 10V
o
T
= 25
C
A
100
FOR TEMPERATURES
o
ABOVE 25
C DERATE PEAK
SINGLE PULSE
CURRENT AS FOLLOWS:
R
θ
JA
= 135
o
C/W
150
–
T
A
———————–
I = I
25
125
10
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, PULSE WIDTH (s)
Figure 13.
Peak Current Capability
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
1
2
R
θ
JA
= 135
o
C/W
PEAK T
= P
J
x Z
x R
+ T
θ
JA
A
DM
θ
JA
1E-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION(s)
Figure 14.
Transient Thermal Response Curve
5
FDM3622 Rev.C6
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
(1.70)
3.30
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
SIDE VIEW
0.65
0.42(8X)
2X
1.95
ꢀꢁꢅꢃꢀꢁꢀꢃ
RECOMMENDED LAND PATTERN
0.10 C
0.08 C
ꢀꢁꢂꢃꢀꢁꢀꢃ
ꢀꢁꢀꢄꢃꢀꢁꢀꢄꢃ
NOTES:
C
SEATING
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO-229
PLANE
B. DIMENSIONS
ARE IN MILLIMETERS.
ꢆꢁꢆꢀꢀꢁꢀꢃ
C. DIMENSIONS
AND TOLERANCES PER
ASME Y14.5M, 2009.
2.27+0.05
(0.50)4X
PIN #1 IDENT
(0.79)
D. LAND
PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
ꢀꢁꢃꢀꢀꢁꢀꢃꢇꢊ;ꢉ
E. DRAWING
FILENAME: MKT-MLP08Srev3.
(0.35)
(1.15)
ꢆꢁꢆꢀꢀꢁꢀꢃ
R0.15
ꢄꢁꢀꢀꢀꢁꢀꢃ
ꢀꢁꢆꢀꢀꢁꢀꢃꢇꢆ;ꢉ
8
5
ꢀꢁꢆꢃꢀꢁꢀꢃꢇꢈ;ꢉ
0.65
0.10
C A B
1.95
0.05
C
BOTTOM VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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