ElecSuper-ESN21307
| Part # | ElecSuper-ESN21307 |
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ESN21307
Rev-1.1
SuperMOS
–
PDFN5*6-8L -30V BV
DSS
,8.5m
Ω
R
DS(on)
,-39A I
D
P-channel MOSFET
1. Description
The ESN21307 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. Device is suitable for use in
DC-DC conversion, power switch and charging circuit. Standard Product ESN21307 is Pb-free.
2. Features
⚫
-30V, R
DS(ON)
=8.5m
Ω
(Typ), V
GS
=-10V
Fast Switching
⚫
⚫
⚫
⚫
Material: Halogen free
Reliable and rugged
Avalanche Rated
⚫
⚫
High density cell design for low R
DS(on)
Low leakage current
3. Applications
⚫
⚫
⚫
⚫
PWM applications
100% UIS TESTED!
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering Information
Part Number
ESN21307
Package
Marking
Material
Quantity per reel
Flammability Rating
5,000 PCS
UL 94V-0
PDFN5*6-8L ESN21307/lot
Halogen free
5. Pin Configuration and Functions
Pin
4
Function
Gate
Outline
Circuit Diagram
8
7
6
5
D
1/2/3
Source
Drain
ESN21307
lot
G
S
5/6/7/8
1
2
3
4
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ESN21307
Rev-1.1
6. Specification
Absolute Maximum Rating & Thermal Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
BV
DSS
V
GS
Limit
-30
Unit
V
Gate-Source Voltage
±25
V
T
C
=25°C
T
C
=75°C
T
C
=25°C
T
C
=75°C
-45
Continuous Drain Current
I
D
A
-35
38
Maximum Power Dissipation
P
D
W
23
Pulsed Drain Current
a
I
DM
I
AS
-150
25
A
A
Avalanche Current, Single Pulsed
b
Avalanche Energy, Single Pulsed
b
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
E
AS
T
J
93.7
150
mJ
°C
°C
T
stg
-55 to +150
Thermal resistance ratings
Parameter
Symbol
R
θJA
Typical
25
Unit
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
t ≤ 10 s
Steady State
°C/W
R
θJC
3.3
Note:
a: Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
b: EAS condition
：
Tj=25
℃
,V
DD
=-30
V
,
V
G
=-10
V
,
L=0.3mH,Rg=25Ω
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ESN21307
Rev-1.1
Electrical Characteristics
At TA = 25
℃
unless otherwise specified
Parameter
Symbol
T
e
st Conditions
Min.
-30
Typ.
Max. Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=-250uA
V
DS
=-30V, V
GS
=0V
V
DS
=0V, V
GS
=±25V
V
-1
uA
nA
I
GSS
±100
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
=V
DS
, I
D
=-250uA
-1.0
-1.5
8.5
-2
12
18
80
V
mΩ
S
V
GS
=-10V, I
D
=-20A
R
DS(on)
Drain-to-source On-resistance
V
GS
=-4.5V, I
D
=-20A
12.5
Forward Trans conductance
g
FS
V
DS
=-5.0V, I
D
=-20A
CHARGES, CAPACITANCES AND GATE RESISTANCE
C
ISS
Input Capacitance
1980
335
260
4.5
V
GS
=0V, f=1MHz,
Output Capacitance
C
OSS
pF
Ω
V
DS
=-15V
Reverse Transfer Capacitance
Gate Resistance
C
RSS
R
g
f=1MHZ
T
o
tal Gate Charge
Q
G(TOT)
Q
GS
36
V
GS
=-10V, V
DS
=-15V,
I
D
=-20A
Gate-to-Source Charge
Gate-to-Drain Charge
6.0
nC
Q
GD
9.4
SWITCHING CHARACTERISTICS
t
d(ON)
Turn-On Delay Time
Rise Time
12
7
t
r
t
d(OFF)
t
f
V
GS
=-10V, V
DS
=-15V,
R
L
=1Ω, R
G
=3Ω
ns
V
Turn-Off Delay Time
Fall Time
48
19
BODY DIODE CHARACTERISTICS
V
SD
V
GS
=0V, I
S
=-1.0A
Forward Voltage
-0.75
-1
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ESN21307
Rev-1.1
7. Typical
Characteristic
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ESN21307
Rev-1.1
8. Dimension
and Patterns (PDFN5*6-8L)
D2
D
b
D1
R
e
Unit: mm
COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER
MILLIMETER
MILLIMETER
Typ.
SYMBOL
SYMBOL
MIN
Typ.
1.000
MAX
MIN
MAX
A
A1
A2
D
0.900
1.100
e
l
1.270 TYP.
0.610
0.254 REF
0~0.05
4.900
0.534
0.424
0.686
0.576
L1
L2
k
0.500
4.824
3.910
4.924
5.924
3.375
5.674
0.350
4.976
4.110
5.076
6.076
3.575
5.826
0.450
1.800 REF.
1.290
D1
D2
E
4.010
1.190
0.549
8°
1.390
0.701
12°
5.000
H
θ
0.625
6.000
10°
E1
E2
b
3.475
R
d
1.100
1.200
1.300
0.100
5.750
0.400
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ESN21307
Rev-1.1
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