TWGMC-BC856A
| Part # | TWGMC-BC856A |
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BC856 THRU BC860
TRANSISTOR(PNP)
BC856 THRU BC860
FEATURES
SOT-23
Switching and Amplifier Applications
Suitable for automatic insertion in thick and thin-film circuits
Low Noise: BC859, BC860
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
Complement to BC846 … BC850
MAXIMUM RATINGS (
T
a
=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector Base Voltage
BC856
80
50
30
65
45
30
V
V
V
V
V
V
-V
CBO
-V
CBO
-V
CBO
-V
CEO
-V
CEO
-V
CEO
BC857, BC860
BC858, BC859
BC856
BC857, BC860
BC858, BC859
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-V
EBO
-I
C
5
100
V
mA
mA
mW
Peak Collector Current
Power Dissipation
-I
CM
P
tot
R
θ
JA
T
j
200
3
00
O
Thermal Resistance from Junction to Ambient Air
Junction
T
e
mperature
417
C/W
O
C
150
O
C
Storage
T
e
mperature Range
T
stg
– 65 to + 150
1
BC856 THRU BC860
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified
)
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
110
200
420
220
450
800
–
–
–
at -V
CE
= 5
V
,
–
I
C
= 2 mA
Current Gain Group
h
FE
h
FE
h
FE
A
B
C
Collector Base Cutoff Current
at -V
CB
= 30 V
-I
CBO
–
15
nA
Collector Base Breakdown Voltage
at -I
C
= 10 µA
BC856
BC857, BC860
-V
(BR)CBO
BC858, BC859
-V
(BR)CBO
-V
(BR)CBO
80
50
30
–
–
–
V
V
V
Collector Emitter Breakdown Voltage
at -I
C
= 10 µA
BC856
BC857, BC860
-V
(BR)CES
BC858, BC859
-V
(BR)CES
80
50
30
–
–
–
V
V
V
-V
(BR)CES
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
BC856
BC857, BC860
BC858, BC859
-V
(BR)CEO
-V
(BR)CEO
-V
(BR)CEO
65
45
30
–
–
–
V
V
V
Emitter Base Breakdown Voltage
at -I
E
= 1 µA
-V
(BR)EBO
5
–
V
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 0.5 mA
at -I
C
= 100 mA, -I
B
= 5 mA
-V
CE(sat)
-V
CE(sat)
–
–
0.3
0.65
V
V
Base Emitter On Voltage
at -I
C
= 2 mA, -V
CE
= 5 V
at -I
C
= 10 mA, -V
CE
= 5 V
-V
BE(on)
-V
BE(on)
0.6
–
0.75
0.82
V
V
Current Gain Bandwidth Product
at -V
CE
= 5
V
,
–
I
C
= 10 mA, f = 100 MHz
Output Capacitance
at -V
CB
= 10
V
, f = 1
M
Hz
Noise Figure
f
T
100
–
–
MHz
pF
C
ob
6
at -I
C
= 200 µA, -V
CE
= 5 V,
R
G
= 2 KΩ, f = 1 KHz
at -I
C
= 200 µA, -V
CE
= 5 V,
R
G
= 2 KΩ, f = 30 ~15 KHz
BC856, BC857, BC858
BC859, BC860
BC859
–
–
–
–
10
4
4
NF
dB
2
BC860
MAR
K
I
NG CODE
TYPE 8
5
6A 8
5
6B 8
5
6C 8
5
7A 8
5
7B 8
5
7C 8
5
8A 8
5
8B 8
5
8C 8
5
9A 8
5
9B 8
5
9C 8
6
0A 8
6
0B 8
6
0C
MARK
3
A
3
B
3
C
3
E
3
F
3
G
3
J
3
K
3
L
4
A
4
B
4
C
4
E
4
F
4
G
2
BC856 THRU BC860
TYPICAL CHARACTERISTICS
-50
-45
1000
100
10
I
B
= – 400
µ
A
I
B
= – 350
µ
A
I
B
= – 300
µ
A
I
B
= – 250
µ
A
V
CE
= – 5V
-40
-35
-30
-25
-20
-15
-10
-5
I
B
= – 200
µ
A
I
B
= – 150
µ
A
I
B
= – 100
µ
A
I
B
= – 50
µ
A
-0
-0.1
-1
-10
-100
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-100
I
C
= 10 I
B
V
CE
= – 5V
V
BE
(sat)
-1
-10
-0.1
-1
V
CE
(sat)
-0.01
-0.1
-0.1
-1
-10
-100
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
1000
100
10
f=1MHz I
E
=0
f=1MHz I
E
=0
10
1
-1
-10
-100
-1
-10
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
3
