Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MMDT5551-RANGE-100-300
| Part # | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MMDT5551-RANGE-100-300 |
Download  | Jiangsu-Changjing-Electronics-Technology-Co—Ltd–MMDT5551-RANGE-100-300 |
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉꢂꢃꢄꢀꢁꢂꢃꢄꢇꢊꢋꢊꢈꢌꢍꢎꢃꢁꢈꢅꢇꢌꢊꢈꢉꢃꢎꢋꢎꢄꢏꢇꢈꢎꢐꢑꢇꢋꢌꢒꢇ
ꢅꢎꢌꢓꢔꢕꢔꢇꢖꢗꢘꢙꢚꢛꢜꢓꢊꢝꢜꢘꢞꢙꢟꢗꢘꢚꢠꢇꢌꢡꢘꢝꢙꢛꢙꢚꢢꢡꢙꢇ
JC
E
T
ꢇꢣꢣꢒꢌꢤꢤꢤꢥ
DUAL TRANSISTOR (NPN+NPN)
ꢦꢊꢂꢌꢆꢍꢊꢅꢇ
ꢅꢎꢌꢓꢔꢕꢔꢇ
6
5
4
ꢀ
ꢀ
ꢀ
Epitaxial Planar Die Construction
Complementary PNP Type Available(MMDT5401)
Ideal for Medium Power Amplification and Switching
1
2
3
ꢇ ꢇ
ꢣꢍꢧꢁꢃꢄꢨꢧꢩꢃꢇ
ꢣꢂꢪꢁꢣꢆꢣꢇꢍꢂꢌꢁꢃꢄꢅꢇꢫꢌ
ꢘ
ꢬꢭꢤ
ꢀ
ꢇꢟꢝꢗꢠꢙꢙꢇꢢꢚꢮꢠꢡꢯꢛꢙꢠꢇꢝꢢꢚꢠꢰꢱꢇ ꢇ
ꢅꢴꢳꢵꢢꢗꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢖꢘꢡꢘꢳꢠꢚꢠꢡꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢼꢘꢗꢟꢠꢇ
ꢆꢝꢛꢚꢙꢇ
ꢼ
ꢈꢺꢎ
ꢇ
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
180
160
6
V
V
ꢼ
ꢈꢊꢎ
ꢼ
ꢊꢺꢎ
ꢁ
ꢈ
ꢇ
ꢇ
ꢇ
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
0.2
A
ꢖ
ꢈ
0.2
W
ꢀ
ꢀ
ꢇ ꢇ
ꢇ
ꢇ
ꢌ
ꢀ
ꢇ
150
-55-150
ꢌ
ꢙꢚꢹ
ꢇ
Storage
T
e
mperature
ꢊꢋꢊꢈꢌꢍꢁꢈꢂꢋꢇꢈꢉꢂꢍꢂꢈꢌꢊꢍꢁꢅꢌꢁꢈꢅꢇꢫꢌꢘꢬꢭꢤ
ꢀ
ꢟꢝꢗꢠꢙꢙꢇꢢꢚꢮꢠꢡꢯꢛꢙꢠꢇꢙꢞꢠꢜꢛꢲꢛꢠꢰꢱꢇ
ꢇ ꢇ ꢇ ꢇ ꢇ ꢇ ꢇ ꢇ ꢇ ꢇ ꢖꢘꢡꢘꢳꢠꢚꢠꢡꢇ
ꢅꢴꢳꢵꢢꢗ ꢇ
ꢇ ꢌꢠꢙꢚꢇ ꢇ ꢇ ꢜꢢꢝꢰꢛꢚꢛꢢꢝꢙꢇ
ꢣꢛ ꢇ
ꢇ ꢌꢴꢞꢇ
ꢇ ꢣꢘꢶ
ꢇ ꢆꢝꢛꢚ
ꢈꢢꢗꢗꢠꢜꢚꢢꢡꢓꢵꢘꢙꢠꢇꢵꢡꢠꢘꢷꢰꢢꢯꢝꢇꢸꢢꢗꢚꢘꢹꢠꢇ ꢇ
ꢈꢢꢗꢗꢠꢜꢚꢢꢡꢓꢠꢳꢛꢚꢚꢠꢡꢇꢵꢡꢠꢘꢷꢰꢢꢯꢝꢇꢸꢢꢗꢚꢘꢹꢠꢇ ꢇ
ꢊꢳꢛꢚꢚꢠꢡꢓꢵꢘꢙꢠꢇꢵꢡꢠꢘꢷꢰꢢꢯꢝꢇꢸꢢꢗꢚꢘꢹꢠꢇ
ꢈꢢꢗꢗꢠꢜꢚꢢꢡꢇꢜꢟꢚꢓꢢꢲꢲꢇꢜꢟꢡꢡꢠꢝꢚꢇ ꢇ
V
(BR)CBO
I
C
=100ꢀA,I
E
=0
V
(BR)CEO
I
C
=1mA , I
B
=0
V
(BR)EBO
I
E
=10ꢀA, I
C
=0
180
160
6
V
V
V
I
CBO
I
EBO
V
CB
=120
V
,
I
E
=0
0.05
0.05
ꢀA
ꢀA
ꢊꢳꢛꢚꢚꢠꢡꢇꢜꢟꢚꢓꢢꢲꢲꢇꢜꢟꢡꢡꢠꢝꢚꢇ ꢇ
V
EB
=4
V
,
I
C
=0
h
FE(1)
h
FE(2)
h
FE(3)
V
CE
=5
V
,
I
C
=1mA
V
CE
=5
V
,
I
C
=10mA
V
CE
=5
V
,
I
C
=50mA
80
ꢇꢇꢇꢇꢇꢇꢇꢇꢇꢇꢒꢈꢇꢜꢟꢡꢡꢠꢝꢚꢇꢹꢘꢛꢝꢇ
10
0
30
300
V
CE(sat)1
I
C
=10mA, I
B
=1mA
V
CE(sat)2
I
C
=50mA, I
B
=5mA
V
BE(sat)1
I
C
=10mA, I
B
=1mA
V
BE(sat)2
I
C
=50mA, I
B
=5mA
0.15
0.2
1
V
V
ꢈꢢꢗꢗꢠꢜꢚꢢꢡꢓꢠꢳꢛꢚꢚꢠꢡꢇꢙꢘꢚꢟꢡꢘꢚꢛꢢꢝꢇꢸꢢꢗꢚꢘꢹꢠꢇ
ꢺꢘꢙꢠꢓꢠꢳꢛꢚꢚꢠꢡꢇꢙꢘꢚꢟꢡꢘꢚꢛꢢꢝꢇꢸꢢꢗꢚꢘꢹꢠꢇ
V
1
V
ꢌꢡꢘꢝꢙꢛꢚꢛꢢꢝꢇꢲꢡꢠꢻꢟꢠꢝꢜꢴꢇ
ꢎꢟꢚꢞꢟꢚꢇꢈꢘꢞꢘꢜꢛꢚꢘꢝꢜꢠꢇ
ꢃꢢꢛꢙꢠꢇꢦꢛꢹꢟꢡꢠꢇ ꢇ
f
T
V
CE
=10
V
,
I
C
=10mA,f=100MHz
100
300
6
MHz
pF
C
ob
NF
V
CB
=10
V
,
I
E
=0, f=1MHz
V
CE
=5
V
,
I
C
=0.2mA,
R
S
=1Kꢁ,f =1kHz
8
dB
ꢇ
ꢇ
ꢇ
ꢇ
1
F,Mar,2016
ꢀ
ꢌꢴꢞꢛꢜꢘꢗꢇꢈꢮꢘꢡꢘꢜꢚꢠꢡꢛꢙꢚꢛꢜꢙ
I
C
h
FE
——
Static Characteristic
18
500
90uA
COMMON EMITTER
V
CE
=5V
COMMON
EMITTER
T
a
=25
ć
T
a
=100
ć
80uA
70uA
15
12
9
T
a
=25
ć
60uA
50uA
40uA
30uA
I
B
=20uA
100
6
3
0
10
0
2
4
6
8
10
12
1
10
100
200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BEsat
——
I
C
V
CEsat
—— I
C
1.0
0.8
0.6
0.4
0.2
0.3
ꢂ=10
ꢂ=10
0.1
T
a
=25
ć
T
a
=100
ć
T
a
=100
ć
T
a
=25
ć
0.01
100
200
0.1
1
10
100
1
10
100
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
V
CB
/
V
EB
C
ob
/ C
ib
——
200
COMMON EMITTER
V
CE
=5V
f=1MHz
I
E
=0 / I
C
=0
100
10
1
T
a
=25
ć
C
ib
T
a
=100
ć
T
a
=25
ć
10
C
ob
1
0.1
0.2
0.4
0.6
0.8
1.0
1
10
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
I
C
f
T
——
P
C
—— T
a
0.25
150
100
V
CE
=10V
T
a
=25
ć
0.20
0.15
0.10
0.05
0.00
50
1
10
20
30
0
25
50
75
100
125
150
3
AMBIENT TEMPERATURE
T
a
(
ć
)
COLLECTOR CURRENT
I
C
(mA)
ꢀ
F,Mar,2016
2
ꢅꢎꢌꢓꢔꢕꢔꢇꢖꢘꢜꢷꢘꢹꢠꢇꢎꢟꢚꢗꢛꢝꢠꢇꢒꢛꢳꢠꢝꢙꢛꢢꢝꢙꢇ
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.4
ꢂꢂ
Min
Max
A
A1
A2
b
0.900
0.000
0.900
0.150
0.
ꢁꢂꢂ
2.000
1.150
2.150
0.035
0.000
0.035
0.006
0.00
ꢃ
0.079
0.045
0.085
0.043
0.004
0.039
0.014
0.006
0.087
0.053
0.09
ꢃ
c
D
E
E1
e
0.650 T
Y
P
0.525 REF
0.026 T
Y
P
0.021 REF
e1
L
1.200
1.400
0.047
0.055
L1
ꢃ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
ꢅꢎꢌꢓꢔꢕꢔ ꢅꢟꢹꢹꢠꢙꢚꢠꢰꢇꢖꢘꢰꢇꢋꢘꢴꢢ
ꢟ
ꢀ
ꢚ
ꢇ
ꢇ
ꢇ
ꢇ
3
F,Mar,2016
ꢀ
