ROHM-Semicon-SST3904T116

UMT3904 / SST3904 / MMST3904  

Transistors  

NPN General Purpose Transistor  

UMT3904 / SST3904 / MMST3904  

z

Features  

z

Dimensions

(Unit : mm)  

1) BV

CEO

> 40V (I

C

= 1mA)  

UMT3904  

2) Complements the UMT3906 / SST3906 / MMST3906.  

(1) Emitter  

(2) Base  

(3) Collector  

ROHM : UMT3  

EIAJ : SC-70  

SOT-323  

SST3904  

z

Package, marking and packaging specifications  

Part No.  

Packaging type  

Marking  

UMT3904 SST3904

 

MMST3904  

UMT3  

R1A  

SST3  

R1A  

SMT3  

R1A  

(1) Emitter  

(2) Base  

(3) Collector  

ROHM : SST3  

MMST3904  

T106  

T116  

T146  

Code  

Basic ordering unit  

(pieces)  

3000  

3000  

3000  

(1) Emitter  

(2) Base  

(3) Collector  

z

Absolute maximum ratings

(

T

a =

2

5

°

C)  

ROHM : SMT3  

EIAJ : SC-59  

Parameter  

Collector-base voltage  

Symbol  

Limits  

60  

Unit  

V

V

CBO  

V

CEO  

V

EBO  

Collector-emitter voltage  

Emitter-base voltage  

Collector current  

40  

V

6

V

I

C

0.2  

A

UMT3904,  

Collector  

SST3904,  

power  

dissipation  

0.2  

W

P

C

MMST3904  

W

°

C  

°

C  

SST3904, MMST3904  

0.35  

150  

∗

Junction temperature  

Storage temperature  

Tj  

Tstg  

−

55 to +150  

∗

When mounted on a 7 x 5 x 0.6 mm ceramic board.  

z

Electrical characteristics

(

T

a =

2

5

°

C)  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

Conditions  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cutoff current  

BV

CBO  

BV

CEO  

BV

EBO  

60  

–

–

–

–

–

–

–

–

–

–

–

V

V

I

I

I

C

C

E

= 10

µ

A  

= 1mA  

40  

6

–

V

= 10

µ

A  

CB

= 30V  

EB

= 3V  

I

CES  

–

50  

50  

0.2  

0.3  

0.85  

0.95  

nA  

nA  

V

V

Emitter cutoff current  

I

EBO  

–

–

I

C  

I

C  

I

C  

I

C  

/I  

/I  

/I  

/I  

B

B

B

B

= 10mA/1mA  

= 50mA/5mA  

= 10mA/1mA  

= 50mA/5mA  

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

CE(sat)  

BE(sat)  

–

0.65  

–

V

40  

70  

100  

60  

30  

300  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

V

V

V

V

V

CE

= 1V , I  

CE

= 1V , I  

CE

= 1V , I  

CE

= 1V , I  

CE

= 1V , I  

C

C

C

C

C

= 0.1mA  

= 1mA  

DC current transfer ratio  

h

FE  

300  

–

–

= 10mA  

= 50mA  

= 100mA  

~

–

–

Transition frequency  

Collector output capacitance  

Emitter input capacitance  

Delay time  

f

T

MHz  

pF  

pF  

ns  

V

V

V

V

V

V

V

CE

= 20V , I

E

=

−

10mA, f = 100MHz  

CB

= 10V , f = 100kHz  

Cob  

Cib  

td  

4

–

8

EB

= 0.5V , f = 100kHz  

CC

= 3V , V

BE(OFF)

= 0.5V , I  

CC

= 3V , V

BE(OFF)

= 0.5V , I  

–

35  

35  

200  

50  

C

C

= 10mA , I

B1

= 1mA  

= 10mA , I

B1

= 1mA  

Rise time  

tr  

–

ns  

Storage time  

tstg  

tf  

–

ns  

CC

= 3V , I  

CC

= 3V , I  

C

= 10mA , I

B1

=

−

I

B2

= 1mA  

= 10mA , I

B1

=

−

I

B2

= 1mA  

Fall time  

–

ns  

C

Rev.B  

1/4  

UMT3904 / SST3904 / MMST3904  

Transistors  

z

Electrical characteristic curves  

10  

Ta=25

°

C  

40  

Ta=25

°

C  

I

C

/ I

B

=10  

35  

0.3  

0.2  

8

30  

25  

20  

6

4

2

0

15  

0.1  

0

10  

5.0  

I

B

=0

µ

A  

0.1  

1.0  

10  

100  

0

10  

20  

V)  

COLLECTOR CURRENT

 

: I

 

(

mA)  

C

COLLECTOR-EMITTER VOLTAGE

 

: V

CE  

(

Fig.1 Grounded

 

emitter output  

characteristics  

Fig.2 Collector-emitter

 

saturation  

voltage vs. collector current  

500  

100  

T

a

=25

°

C  

5V  

10V  

V

CE

=1V  

3V  

10  

5

0.1  

1.0  

10  

COLLECTOR CURRENT : I  

100  

1000  

C

(

mA)  

Fig.3 DC

 

current gain vs. collector current (

Ι

)  

500  

100  

V

CE

=5V  

Ta=125

°

C  

Ta=25

°

C  

Ta=

−

55

°

C  

10  

5

0.1  

1.0  

10  

100  

1000  

COLLECTOR CURRENT

 

: I

C

(

mA)  

Fig.4 DC

 

current gain vs. collector current (

ΙΙ

)  

Rev.B  

2/4  

UMT3904 / SST3904 / MMST3904  

Transistors  

500  

T

a

=25

°

C  

CE

=5V  

f=1kHz  

1.8  

1.6  

Ta=25

°

C  

/ I =10  

I

C

B

V

1.2  

0.8  

100  

0.4  

0

10  

5

0.01  

0.1  

1.0  

10  

100  

0.1  

1.0  

10  

100  

COLLECTOR CURRENT : I  

C

(

mA)  

COLLECTOR CURRENT

 

: I

C

(

mA)  

Fig.6 Base-emitter

 

saturation  

voltage vs. collector current  

Fig.5 AC

 

current gain vs. collector current  

1.8  

1.6  

1000  

1000  

Ta=25

°

C  

Ta=25

°

C  

/ I =10  

Ta=25

°

C  

/ I =10  

V

CE

=5V  

I

C

B

I

C

B

1.2  

0.8  

V

CC

=40V  

40V  

100  

100  

15V  

CC

=3V  

V

0.4  

0

10  

1.0  

10  

1.0  

0.1  

1.0  

10  

100  

10  

COLLECTOR CURRENT : I  

100  

10  

COLLECTOR CURRENT : I  

100  

COLLECTOR CURRENT : I  

C

(

mA)  

C

(

mA)  

C

(

mA)  

Fig.7 Grounded

 

emitter propagation  

characteristics  

Fig.9 Rise

 

time vs. collector  

current  

Fig.8 Turn-on

 

time vs. collector  

current  

50  

10  

1000  

1000  

Ta=25

°

C  

Ta=25

°

C  

CC

=40V  

/I =10  

Ta=25

°

C  

f=1MHz  

I

C

=10I

B1

=10I

B2  

V

I

C B  

40V  

Cib  

100  

100  

Cob  

15V  

V

CE

=3V  

1

0.5  

0.1  

10  

1.0  

10  

1.0  

1.0  

10  

100  

10  

COLLECTOR CURRENT : I  

100  

10  

100  

REVERSE BIAS VOLTAGE

 

(

V)  

C

(

mA)  

COLLECTOR CURRENT : I

C

(

mA)  

Fig.12 Input

 

/ output capacitance  

vs. voltage  

Fig.10 Storage

 

time vs. collector  

current  

Fig.11 Fall

 

time vs. collector  

current  

Rev.B  

3/4  

UMT3904 / SST3904 / MMST3904  

Transistors  

1000  

100  

100  

Ta=25

°

C  

Ta=25

°

C  

V

CE

=5V  

V

CE

=5V  

f=270Hz  

100MHz 200MHz

 

400MHz 500MHz  

300 MHz  

hoe  

10  

10  

hie  

100  

hre  

hfe  

1.0  

0.1  

1

Ta=25

°

C  

I

C

=1mA  

hie=3.84k

Ω  

300MHz  

200MHz  

hfe=141  

hre=5.03

×

10

−

5  

hoe=5.58

µ

S  

100MHz  

100  

10  

1.0  

0.1  

0.1  

10  

100  

0.1  

1.0  

10  

1

10  

100  

COLLECTOR CURRENT : I

C

(

mA)  

COLLECTOR CURRENT : I  

C

(

mA)  

COLLECTOR CURRENT : I  

C

(

mA)  

Fig.14 Gain

 

bandwidth product  

vs. collector current  

Fig.13 Gain

 

bandwidth product  

Fig.15 h

 

parameter vs. collector current  

100k  

100k  

10

µ  

1

µ  

Ta=25

°

C  

CE

=5V  

f=10kHz  

V

CB

=25V  

Ta=25

°

C  

V

V

CE

=5V  

f=1kHz  

12dB  

8dB  

12dB  

8dB  

5dB  

5dB  

3dB  

10k  

10k  

1.0dB  

100n  

10n  

NF=1.0dB  

NF=1.0dB  

1k  

1k  

1n  

100  

0.01  

100  

0.01  

0.1n  

0.1  

1

10  

0.1  

1

10  

0

25  

50  

75  

100  

125  

150  

COLLECTOR CURRENT : I  

C

(

mA)  

COLLECTOR CURRENT : I

C

(

mA)  

ANBIENT TEMPERATURE

 

: Ta (

°

C)  

Fig.17 Noise

 

characteristics (

ΙΙ

)  

Fig.18 Noise

 

characteristics (

ΙΙΙ

)  

Fig.16 Noise

 

characteristics (

Ι

)  

100k  

10k  

12  

10  

8

Ta=25

°

C  

Ta=25

°

C  

V

CE

=5V  

V

CE

=5V  

f=10Hz  

I

C

=100

µ

A  

R

S

=10k

Ω  

12dB  

8dB  

5dB  

6

4

1k  

5.0dB  

2

0

100  

0.01  

10  

100  

1k  

10k  

100k  

0.1  

1

10  

FREQUENCY : f (

Hz)  

COLLECTOR CURRENT : I

C

(

mA)  

Fig.20 Noise

 

vs. collector current  

Fig.19 Noise

 

characteristics (

Ι

V

)  

Rev.B  

4/4  

Appendix  

Notes  

No technical content pages of this document may be reproduced in any form or transmitted by any  

means without prior permission of ROHM CO.,LTD.  

The contents described herein are subject to change without notice. The specifications for the  

product described in this document are for reference only. Upon actual use, therefore, please request  

that specifications to be separately delivered.  

Application circuit diagrams and circuit constants contained herein are shown as examples of standard  

use and operation. Please pay careful attention to the peripheral conditions when designing circuits  

and deciding upon circuit constants in the set.  

Any data, including, but not limited to application circuit diagrams information, described herein  

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  

third party’s intellectual property rights or other proprietary rights, and further, assumes no liability of  

whatsoever nature in the event of any such infringement, or arising from or connected with or related  

to the use of such devices.  

Upon the sale of any such devices, other than for buyer’s right to use such devices itself, resell or  

otherwise dispose of the same, no express or implied right or license to practice or commercially  

exploit any intellectual property rights or other proprietary rights owned or controlled by  

ROHM CO., LTD. is granted to any such buyer.  

Products listed in this document are no antiradiation design.  

The products listed in this document are designed to be used with ordinary electronic equipment or devices  

(such as audio visual equipment, office-automation equipment, communications devices, electrical  

appliances and electronic toys).  

Should you intend to use these products with equipment or devices which require an extremely high level  

of reliability and the malfunction of which would directly endanger human life (such as medical  

instruments, transportation equipment, aerospace machiner

y

, nuclear-reactor controllers, fuel controllers  

and other safety devices), please be sure to consult with our sales representative in advance.  

It is our top priority to supply products with the utmost quality and reliabilit

y

.

H

owever, there is always a chance  

of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow  

for sufficient safety features, such as extra margin, anti-flammabilit

y

,

a

nd fail-safe measures when designing in  

order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM  

cannot be held responsible for any damages arising from the use of the products under conditions out of the  

range of the specifications or due to non-compliance with the NOTES specified in this catalog.  

Thank you for your accessing to ROHM product informations.  

More detail product informations and catalogs are available, please contact your nearest sales office.  

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Copyright ©

2007 ROHM CO.,

L

T

D.  

21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan  

Appendix1-Rev2.0