WILLSEMI-Will-Semicon-WPM2341-3-TR
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WPM
2341
WPM
2341
P
-Channel Enhancement Mode Mosfet
Features
zꢀ
Higher Efficiency Extending Battery Life
zꢀ
Miniature SOT23-3 Surface Mount Package
zꢀ
Super high density cell design for extremely low RDS (ON)
3
1
2
Applications
zꢀ
DC/DC Converter
zꢀ
Load Switch
SOT 23-3
zꢀ
Battery Powered System
zꢀ
zꢀ
LCD Display inverter
Power Management in Portable, Battery Powered Products
pin connection
s
:
P
ï
Channel
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Steady
G
S
1
2
Parameter
Symbol
5 s
Unit
V
State
3
D
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
-20
8
Continuous Drain Current
T
A
=25°C
-4.3
-3.2
-3.5
-2.5
Top View
I
D
I
DM
I
S
(T
J
= 150 °C)
a
T
A
=80°C
Marking:
A
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
a
-20
Drain
3
-1.7
-1
Maximum Power
Dissipation
a
T
A
=25°C
T
A
=80°C
1.25
0.7
0.75
0.42
W41Z
P
D
W
2
1
Operating Junction and Storage
T
e
mperature Range
Gate Source
T
J
, T
stg
– 55 to 150
°C
W 41= Specific Device Code
Z = Date Code
a.
Surface Mounted on FR4 Board using 1 in sq pad size,2oz Cu.
Order information
Part
ꢀ
Number
ꢀ
Package
ꢀ
Shipping
ꢀ ꢀ
3000
ꢀ
Tape
ꢀ
&
ꢀ
Reel
ꢀ
WPM2341
Ͳ
3/T
R
ꢀ
SOT23-3
ꢀ
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.9
WPM
2341
THERMAL RESISTANCE RATINGS
ꢀꢀ
Parameter
Symbol
R
ș
JA
Typical Maximum Unit
t
5 s
75
100
165
Junction-to-Ambient Thermal Resistance
b
°C/W
Steady State
125
b.
Surface Mounted on FR4 Board using 1 in sq pad size, 2oz Cu.
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
=25
ć
unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
BV
DSS
I
DSS
I
GSS
V
GS
= 0V,I
D
= -250
ȝ
A
V
DS
=-16V,V
GS
= 0V
V
GS
=
f
8
V,V
DS
= 0V
-20
V
ȝ
A
nA
-1
f
100
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
V
GS(th)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
=-250
ȝ
A
V
GS
= -4.5V, I
D
= –
3.3
A
V
GS
= -2.5V,I
D
= –
2.8
A
V
DS
= –
5
V, I
D
= –
3.3
A
-0.35
-0.63
52
V
m
ȍ
m
ȍ
S
-1.00
61
65
71
3
.0
C
iss
C
oss
C
rss
7
00
1
6
0
1
2
0
pF
pF
pF
V
DS
= –
6
V, V
GS
= 0V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
f = 1.0 MHz
t
d(on)
t
r
t
d(off)
t
f
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
25
55
90
60
13
ns
ns
ns
ns
nC
nC
nC
nC
V
GS
= -4.5V, V
DD
= –
6
V,
I
D
= –
1.0
A, R
G
=
6.0
ȍ
,
Total Gate Charge
8
Threshold gate charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= –
6
V,I
D
= –
3.3
A,
0.2
1.2
2.2
V
GS
=-4.5V
Drain-Source Diode Characteristics and Maximun Ratings
Forward Diode Voltage
V
V
SD
V
GS
= 0V,I
S
= –
1.6
A
-0.
8
Will Semiconductor Ltd.
2
2015/08/25 – Rev. 1.9
WPM
2341
(T =
25
°
C unless otherwise noted)
J
Typical Characteristics
20
20
16
12
8
V
=-5 thru -2.5 V
GS
T
C
= – 55 °C
16
12
8
-2 V
25 °C
125 °C
-1.5 V
-1 V
4
4
0
0
0
1
2
3
4
5
0.0
0.5
-V
1.0
1.5
2.0
2.5
-V –
Drain-to-Source Voltage (V)
DS
– Gate-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
900
750
600
450
300
150
0
V
=-2.5 V
GS
C
iss
V
=-4.5 V
GS
C
oss
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
-I –
Drain Current (A)
D
-V –
Drain-to-Source Voltage (V)
DS
Capacitance
On-Resistance vs. Drain Current
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5
4
3
2
1
0
V
I
=-4.5 V
=-3.3 A
V
I
=-6 V
DS
GS
D
=-3.3 A
D
– 50
– 25
0
25
50
75
100 125 150
0
2
4
6
8
10
Q
g
– Total Gate Charge (nC)
T – Junction
Temperature (°C)
J
On-Resistance vs. Junction Temperature
Gate Charge
Will Semiconductor Ltd.
3
2015/08/25 – Rev. 1.9
WPM
2341
(T =
25
°
C unless otherwise noted)
J
Typical Characteristics
0.15
0.12
0.09
0.06
0.03
0.00
20
10
I
D
=-3.3 A
T
J
= 150 °C
I
D
= – 2 A
T
J
= 25 °C
1
0.1
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V –
Gate-to-Source Voltage (V)
GS
-V –
Source-to-Drain Voltage (V)
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
0.3
12
10
8
I
D
=
–
2
50
μA
0.2
6
0.1
0.0
4
2
T
A
= 25 °C
– 0.1
– 0.2
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
Time (s)
Single Pulse Power
100
600
T
J
– Temperature (°C)
Threshold Voltage
100
I
Limited
DM
Limited by R
DS(on)
*
10
1
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
T
= 25 °C
A
0.1
Single Pulse
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Safe Operating Area
Will Semiconductor Ltd.
4
2015/08/25 – Rev. 1.9
WPM
2341
(T =
25
°
C unless otherwise noted)
J
Typical Characteristics
2
1
Duty Cycle = 0.5
Notes:
0.2
0.1
P
DM
0.1
t
1
0.05
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 125 °C/W
thJA
(t)
Z
3. T
– T
= P
DM thJA
JM
A
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Will Semiconductor Ltd.
5
2015/08/25 – Rev. 1.9
WPM
2341
Power Dissipation Characteristics
1. The package of WPM2341 is SOT23-3, surface mounted on FR4 Board using 1 in sq pad size
ˈ
2 oz Cu
ˈ
R
ș
JA
is 125
ć
/W.
2. The power dissipation P
D
is based on T
J(MAX)
=150°C, and the relation between T
J
and P
D
is T
J
= T
a
+
R
ș
JA
* P
D
, the maximum power dissipation is determined by R
ș
JA
.
3. The R
ș
JA
is the thermal impedance from junction to ambient, using larger PCB pad size can get
smaller R
ș
JA
and result in larger maximum power dissipation.
125
ć
/W when mounted on
a 1 in
2
pad of 2 oz copper.
Welding temperature curve
Will Semiconductor Ltd.
6
2015/08/25 – Rev. 1.9
WPM
2341
Packaging Information
SOT23-3 Package Outline Dimension
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‘LPHQVLRQVꢀ,Qꢀ,QFKHV
6PERO
0LQ
0D[
0LQ
0D[
A
A1
A2
b
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
c
D
E
E1
e
0.950(BSC)
0.037(BSC)
e1
L
ș
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
Will Semiconductor Ltd.
7
2015/08/25 – Rev. 1.9
