BORN-MMBT3906
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MMBT3906
RHOS
Transistors
SOT-23 Plastic-Encapsulate Transistors(PNP)
Features
SOT-23
As complementary type the NP
N
transistor MMBT3904 is recommended
Epitaxial planar die construction
Maximum Ratings
(
Ratings at 25
℃
ambient temperature unless otherwise specified.)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
-40
Units
V
1. BASE
-40
V
2. EMITTER
3. COLLECTOR
-5
V
Collector Current -Continuous
T
o
tal Device Dissipation
Thermal Resistance Junction to Ambient
Junction
T
e
mperature
-2
00
200
mA
mW
℃
/W
℃
P
C
R
θ
JA
T
J
625
MARKING: 2A
150
T
stg
Storage
T
e
mperature
-55 to +150
℃
Electrical Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified).
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEX
Test
conditions
MIN
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
current
I
C
=-10
μ
A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10
μ
A, I
C
=0
V
CB
=-40
V
,
I
E
=0
-40
-40
-5
V
V
-0.1
-50
μ
A
nA
μ
A
Collector cut-off
current
V
CE
=-30
V
,
V
BE(off)
=-3V
V
EB
=-5
V
,
I
C
=0
Emitter cut-off
current
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
-0.1
300
V
CE
=-1
V
,
I
C
=-10mA
V
CE
=-1
V
,
I
C
= -50mA
V
CE
=-1
V
,
I
C
= -100mA
I
C
=-50mA, I
B
= -5mA
I
C
= -50mA, I
B
=-5mA
V
CE
=-20
V
,
I
C
=-10mA,
f=
100MHz
V
CC
=-3
V
,
V
BE
=-0.5V
I
C
=-10mA, I
B1
=-I
B2
=-1mA
V
CC
=-3
V
,
I
C
=-10mA,
I
B1
=-I
B2
=-1mA
100
60
DC current gain
30
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
-0.4
V
V
-0.95
300
MHz
nS
nS
nS
nS
35
35
td
Rise Time
tr
Storage Time
225
75
ts
Fall Time
tf
CLASSIFICATION OF
h
FE(1)
Rank
O
Y
Range
100-200
200-300
Page 1 of 2
Rev 8: Nov 2014
MMBT3906
RHOS
Transistors
SOT-23 Plastic-Encapsulate Transistors(PNP)
Page 2 of 2
Rev 8: Nov 2014
