NATLINEAR-NP2301AMR-G

NP2301A  

P-Channel Enhancement Mode MOSFET  

Description Schematic

 

diagram  

The NP2301A uses advanced trench technology  

S

to provide excellent R

DS(ON)

, low gate charge and  

operation with gate voltages as low as 1.8V. This  

device is suitable for use as a load switch or in PWM  

applications.  

G

D

General Features  



V

DS

=-20V

，

I

D

=-2.8A  

Marking and pin assignment  

R

DS(ON)

(Typ.)=75

mΩ

@V

GS

=-2.5V  

R

DS(ON)

(Typ.)=60

mΩ

@V

GS

=-4.5V  



High power and current handing capability  



Lead free product is acquired  



Surface mount package  

SOT-23-3L  

(TOP VIEW)  

D

3

Application  

2 3 A L  



PWM applications  



Load switch  

1

2

Package  

G

S



SOT-23-3L  

Ordering Information  

Storage Temperature  

Package  

Devices Per Reel  

Part Number  

NP2301AMR  

-55°C to +150°C  

SOT-23-3L  

3000  

Absolute Maximum Ratings

(TA=25

℃

unless otherwise noted)  

parameter  

Drain-source voltage  

Gate-source voltage  

symbol  

limit  

-20  

unit  

V

V

DS  

V

GS  

I

D  

±12  

V

Drain current-continuous

a

@Tj=125

℃  

-pulse

d

b  

-2.8  

A

I

DM  

Is  

-11  

A

Drain-source Diode forward current  

Maximum power dissipation  

-1.25  

1.2  

A

P

D  

Tj  

W

℃

Operating junction

T

e

mperature range  

-55

—

150  

Rev.1.0

—

Oct. 26. 2017  

1

NP2301A  

Electrical Characteristics

(TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min  

Typ  

Max Unit  

OFF Characteristics  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage  

BV

DSS  

I

DSS  

V

GS

=0V, I

D

=-250µA  

-20  

–

–

–

–

V

V

DS

=-20V, V

GS

=0V  

V

DS

=0V, V

GS

=±12V  

–

–

-1  

µA  

nA  

I

GSS  

±100  

ON Characteristics  

Gate threshold voltage  

V

GS(th)  

R

DS(ON)  

gfs  

V

DS

=V

GS

, I

D

=-250µA  

-0.4 -0.65 -1.2  

V

mΩ  

S

V

GS

=-4.5V, I

D

=-2.8A  

V

GS

=-2.5V, I

D

=-2.8A  

V

GS

=-5V, I

D

=-5A  

–

–

–

60  

75  

5

80  

120  

–

Drain-source on-state resistance  

Forward transconductance  

Dynamic Characteristics  

Input capacitance  

C

ISS  

–

–

–

561  

61  

–

–

–

V

DS

=-10V ,V

GS

=0V  

f=1.0MHz  

Output capacitance  

C

OSS  

C

RSS  

pF  

ns  

Reverse transfer capacitance  

52  

Switching Characteristics  

Turn-on delay time  

Rise time  

t

D(ON)  

tr  

t

D(OFF)  

tf  

–

–

–

–

–

–

–

12.5  

6.6  

–

–

–

–

–

–

–

V

DD

=-10V  

I

D

=-2.8A  

V

GEN

=-4.5V  

R

L

=10ohm  

R

GEN

=-60ohm  

Turn-off delay time  

Fall time  

113  

46.6  

6.1  

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

Qg  

V

DS

=-10V,I

D

=-3A  

V

GS

=-4.5V  

Qgs  

Qgd  

1.7  

nC  

V

1.2  

DRAIN-SOURCE DIODE CHARACTERISTICS  

V

SD

V

GS

=0V,Is=-1.25A  

Diode forward voltage  

–

-0.81 -1.2  

Notes:  

a.

surface mounted on FR4 board,t≤10sec  

b.

pulse test:

pulse width≤300μs,duty≤2%  

c.

guaranteed by design, not subject to production testing  

Thermal Characteristics  

Thermal Resistance junction-to ambient  

Rth JA  

100  

℃

/W  

Rev.1.0

—

Oct. 26. 2017  

2

NP2301A  

Typical Performance Characteristics  

Rev.1.0

—

Oct. 26. 2017  

3

NP2301A  

Rev.1.0

—

Oct. 26. 2017  

4

NP2301A  

Package Information  



SOT-23-3L  

θ

D

b

0.2  

e

c

e1  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

Min  

Max  

A

A1  

A2  

b

1.050  

0.000  

1.050  

0.300  

0.100  

2.820  

1.500  

2.650  

1.250  

0.100  

1.150  

0.500  

0.200  

3.020  

1.700  

2.950  

0.041  

0.000  

0.041  

0.012  

0.004  

0.111  

0.059  

0.104  

0.049  

0.004  

0.045  

0.020  

0.008  

0.119  

0.067  

0.116  

c

D

E

E1  

e

0.950(BSC)  

0.037(BSC)  

e1  

L

1.800  

0.300  

0

°

 

2.000  

0.600  

8

°  

0.071  

0.012  

0

°  

0.079  

0.024  

8

°  

θ

Rev.1.0

—

Oct. 26. 2017  

5