onsemi-BCW66GLT1G
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BCW66GLT1G,
SBCW66GLT1G
General Purpose
T
r
ansistor
NPN Silicon
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT−23
(TO−236)
CASE 318
STYLE 6
MAXIMUM RATINGS
COLLECTOR
3
Rating
Symbol
Value
45
Unit
Vdc
Collecto
r
−
E
mitter Voltage
Collecto
r
−
B
ase Voltage
Emitte
r
−
B
ase Voltage
V
CEO
V
CBO
V
EBO
1
75
Vdc
BASE
5.0
Vdc
Collector Current − Continuous
Collector Current − Pulsed
I
C
I
C
800
1200
mAdc
mAdc
2
EMITTER
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
EG M
G
Characteristic
Symbol
Max
Unit
G
T
o
tal Device Dissipation FR
−
5
B
oard
P
D
225
mW
Derate above 25
°
C
A
1.8
mW/
°
C
°
C/W
EG
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
T
o
tal Device Dissipation Alumina
P
D
(*Note: Microdot may be in either location)
300
2.4
mW
mW/
°
C
A
Derate above 25
°
C
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Thermal Resistance,
Junction−to−Ambient
R
417
°
C/W
°
C
q
JA
ORDERING INFORMATION
Junction and Storage
T
e
mperature
T , T
J
−
5
5 to +150
stg
†
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
Device
Package
Shipping
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in 99.5% alumina.
BCW66GLT1G
SOT−23 3,000/
T
a
pe
& Reel
(Pb−Free)
SBCW66GLT1G
BCW66GLT3G
SOT−23 3,000/
T
a
pe
& Reel
(Pb−Free)
SOT−23 10,000/
T
a
pe
& Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
October, 2016 − Rev. 6
BCW66GLT1/D
BCW66GLT1G, SBCW66GLT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage (I
= 10 mAdc, I
= 0)
V
(BR)CEO
45
75
−
−
−
−
−
−
Vdc
Vdc
Vdc
C
B
Collecto
r
−
E
mitter Breakdown Voltage (I
= 10
m
Adc, V
= 0)
V
C
EB
(BR)CES
(BR)EBO
Emitte
r
−
B
ase Breakdown Voltage (I
= 10
m
Adc, I
= 0)
V
5.0
E
C
Collector Cutoff Current
(V =
45 Vdc, I
= 0)
I
CES
−
−
−
−
20
20
nAdc
m
Adc
CE
E
(V =
45 Vdc, I
= 0, T
= 150
°
C)
CE
E
A
Emitter Cutoff Current (V
= 4.0 Vdc, I
= 0)
I
−
−
20
nAdc
−
EB
C
EBO
ON CHARACTERISTICS
DC Current Gain
h
FE
(I =
100
m
Adc, V
= 10 Vdc)
50
110
160
60
−
−
−
−
−
−
400
−
C
CE
(I =
10 mAdc, V
= 1.0 Vdc)
C
CE
(I =
100 mAdc, V
= 1.0 Vdc)
C
CE
(I =
500 mAdc, V
= 2.0 Vdc)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
500 mAdc, I
= 50 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−
−
0.7
0.3
C
B
(I =
100 mAdc, I
= 10 mAdc)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
500 mAdc, I
= 50 mAdc)
V
BE(sat)
−
−
2.0
C
B
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain — Bandwidth Product
f
100
−
−
−
−
−
−
MHz
pF
T
(I =
20 mAdc, V
= 10 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
12
80
10
obo
(V =
10 Vdc, I
= 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
−
pF
ibo
(V =
0.5 Vdc, I
= 0, f = 1.0 MHz)
EB
C
Noise Figure
NF
−
dB
(V =
5.0 Vdc, I
= 0.2 mAdc, R
= 1.0 k
W
, f = 1.0 kHz, BW = 200 Hz)
CE
C
S
SWITCHING CHARACTERISTICS
Turn−On Time (I
= I
= 15 mAdc)
t
t
−
−
−
−
100
400
ns
ns
B1
B2
on
Turn−Off Time (I
= 150 mAdc, R
= 150
W
)
C
L
off
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
I /I
= 10
C
B
C
B
T =
−55
°
C
A
0.1
T =
25
°
C
A
T =
25
°
C
A
T =
150
°
C
A
0.3
0.2
T =
150
°
C
A
T =
−55
°
C
0.1
A
0.01
1
10
100
1000
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Base Emitter Saturation Voltage vs.
Collector Current
2
BCW66GLT1G, SBCW66GLT1G
TYPICAL CHARACTERISTICS
1000
2.0
V
CE
= 2 V
T =
25
°
C
A
T =
150
°
C
A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T =
25
°
C
A
T =
−55
°
C
A
100 mA
200 mA
500 mA
I
C
= 800 mA
100
0.2
0
10
0.001 0.01
0.1
1
10
100
1000
0.1
0.1
1
1
10
100
I ,
COLLECTOR CURRENT (mA)
I ,
BASE CURRENT (mA)
C
B
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Saturation Region
1.0
0.9
0.8
100
V
CE
= 2 V
f = 1 MHz
C
ibo
T =
−55
°
C
A
0.7
0.6
0.5
0.4
C
obo
T =
25
°
C
A
10
T =
150
°
C
A
0.3
0.2
1
0.1
1
10
100
1000
1
10
100
I ,
COLLECTOR CURRENT (mA)
V ,
REVERSE VOLTAGE (V)
C
R
Figure 5. Base−Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Capacitance
1000
10,000
1000
100
V
CE
= 2 V
0.1 ms,
0.01 ms
T =
25
°
C
A
1 s
100 ms
10 ms
1 ms
100
10
1
Single Pulse
T
e
st at T
= 25
°
C
A
10
0.1
1
10
100
1000
10
100
I ,
COLLECTOR CURRENT (mA)
C
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 7. Current Gain Bandwidth Product vs.
Collector Current
Figure 8. Safe Operating Area
3
BCW66GLT1G, SBCW66GLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
STYLE 6:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
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◊
BCW66GLT1/D
