STMicroelectronics-TIP142
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TIP142, TIP147
Complementary power Darlington transistors
Datasheet — production data
Features
■
Monolithic Darlington configuration
■
Integrated antiparallel collector-emitter diode
Applications
3
2
1
■
Linear and switching industrial equipment
TO-247
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Figure 1.
Internal schematic diagrams
R
1
typ. = 5 k
Ω
R
2
typ. = 60
Ω
R
1
typ. = 8 k
Ω
R
2
typ. = 100
Ω
Table 1.
Device summary
Part number
Marking
Polarity
Package
TO-247
Packaging
TIP142
TIP147
TIP142
TIP147
NPN
PNP
T
u
be
April 2012
Doc ID 4132 Rev 8
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This is information on a product in full production.
10
Absolute maximum ratings
TIP142, TIP147
1
Absolute maximum ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
CBO
V
CEO
V
EBO
I
C
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
100
100
V
V
5
V
10
A
I
CM
Collector peak current
20
A
I
B
Base current
0.5
A
P
TOT
T
STG
T
J
T
o
tal dissipation at T
case
= 25 °C
Storage temperature
125
W
°C
°C
-65 to 150
150
Max. operating junction temperature
Note:
For PNP type voltage and current are negative.
T
a
ble 3.
Symbol
Thermal data
Parameter
Thermal resistance junction-case
Value
Unit
R
thJC
__
max
1
°C/W
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TIP142, TIP147
Electrical characteristics
2
Electrical characteristics
T
case
= 25 °C; unless otherwise specified.
T
a
ble 4.
Symbol
Electrical characteristics
Parameter
Test conditions
V
CB
= 100 V
Min. Typ. Max. Unit
Collector cut-off current
I
CBO
I
CEO
I
EBO
1
2
2
mA
mA
mA
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
V
CE
= 50 V
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V
Collector-emitter
sustaining voltage
(I
B
= 0)
(1)
V
CEO(sus)
I
C
= 30 mA
100
V
I
C
= 5 A
I
B
= 10 mA
I
B
= 40 mA
2
3
V
V
Collector-emitter
saturation voltage
(1)
V
CE(sat)
I
C
= 10 A
(1)
V
BE(on)
Base-emitter on voltage
I
C
= 10 A
V
CE
= 4 V
3
V
I
C
= 5 A
DC current gain
V
CE
= 4 V
V
CE
= 4 V
1000
500
(1)
h
FE
I
C
= 10 A
Resistive load
t
on
t
off
T
u
rn-on time
T
u
rn-off time
I
C
= 10 A
R
L
= 3
Ω
0.9
4
µs
µs
I
B1
= -I
B2
= 40 mA
1. Pulse
test: pulse duration
≤
300 µs, duty cycle
≤
2 %.
For PNP type voltage and current are negative.
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Electrical characteristics (curve)
TIP142, TIP147
3
Electrical characteristics (curve)
Figure 2.
Safe operating area
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TIP142, TIP147
Test circuits
4
Test circuits
Figure 3.
Resistive load switching test circuit (NPN type)
1. Fast
electronic switch
2. Non-inductive
resistor
Figure 4.
Resistive load switching test circuit (PNP type)
1. Fast
electronic switch
2. Non-inductive
resistor
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Package mechanical data
TIP142, TIP147
5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK
®
packages, depending on their level of environmental compliance. ECO
P
ACK
®
ECO
P
A
CK
®
is an ST trademark.
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TIP142, TIP147
Package mechanical data
Table 5.
Dim.
TO-247 mechanical data
Min.
mm.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅
P
∅
R
S
3.55
4.50
5.30
3.65
5.50
5.70
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Package mechanical data
Figure 5.
TO-247 drawing
TIP142, TIP147
0075
3
25_G
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TIP142, TIP147
Revision history
6
Revision history
Table 6.
Date
Document revision history
Revision
Changes
15-Oct-2007
12-May-2010
6
7
Package change from SO
T
–
93 to TO-247.
T
e
chnology change from epitaxial base to planar base island.
19-Apr-2012
8
Updated: mechanical data
Doc ID 4132 Rev 8
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TIP142, TIP147
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