LRC-L2N7002WT1G
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LESHAN RADIO COMPAN
Y
,
L
TD.
Small Signal MOSFET
115 mA, 60 V
L2N7002WT1G
N–Channel SOT–323
3
We declare that the material of product
compliance with RoHS requirements.
•
1
ESD Protected:1000V
•
2
MAXIMUM RATINGS
SOT– 323 (SC-70)
Rating
Drain–Source Voltage
Symbol
V
DSS
Value
60
Unit
V
dc
Drain–Gate Voltage (R
GS
= 1.0 M
Ω
)
V
DGR
60
V
dc
Drain Current
I
D
I
D
I
DM
mAdc
±115
±75
±800
Simplified Schematic
– Continuous T
C
= 25
°
C (Note 1.)
– Continuous
T
C
= 100
°
C (Note 1.)
– Pulsed (Note 2.)
Gate
1
Gate–Source Voltage
– Continuous
±20
±40
V
GS
V
GSM
Vdc
Vpk
– Non–repetitive (t
≤
50
µ
s)
p
3
Drain
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Source
2
T
o
tal Device Dissipation FR–5 Board
(Note 3.) T
A
= 25
°
C
P
D
225
1.8
mW
mW/
°
C
Derate above 25
°
C
(
T
o
p View)
Thermal Resistance, Junction to Ambient
R
θ
JA
P
D
556
300
°
C/W
T
o
tal Device Dissipation
mW
Alumina Substrate,(Note 4.) T
= 25
°
C
Derate above 25
°
C
mW/
°
C
A
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage
T
e
mperature
R
θ
JA
417
°
C/W
°
C
T
J,
T
stg
-55 to
+150
MARKING DIAGRAM
& PIN ASSIGNMENT
1. The
Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%.
3. FR–5
= 1.0 x 0.75 x 0.062 in.
Drain
3
4. Alumina
= 0.4 x 0.3 x 0.025 in 99.5% alumina.
6C
ORDERING INFORMATION
1
Gate
2
Source
Device
Marking
6C
Shipping
6C
M
= Device Code
=Month Code
L2N7002WT1G
L2N7002WT3G
1
0000
T
a
pe & Reel
6C
Rev .O
1/4
LESHAN RADIO COMPAN
Y
,
L
TD.
L2N7002WT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
µ
Adc)
V
(BR)DSS
60
–
–
Vdc
µ
Adc
µ
Adc
Zero Gate Voltage Drain Current
(V
GS
= 0, V
DS
= 60 Vdc)
T
J
= 25
°
C
T
J
= 125
°
C
I
DSS
–
–
–
–
1.0
500
Gate–Body Leakage Current, Forward
(V
GS
= 20 Vdc)
I
GSSF
–
–
1
Gate–Body Leakage Current, Reverse
I
GSSR
–
–
µ
Adc
-1
(V
GS
= –
20 Vdc)
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
µ
Adc)
V
GS(th)
1.0
1.6
–
2.5
–
Vdc
mA
Vdc
On–State Drain Current
(V
DS
≥
2.0 V
DS(on)
, V
GS
= 10 Vdc)
I
D(on)
500
Static Drain–Source On–State Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
V
DS(on)
–
–
–
–
3.75
0.375
Static Drain–Source On–State Resistance
r
DS(on)
Ohms
(V
GS
= 10
V
,
I
D
= 500 mAdc)
T
C
= 25
°
C
T
C
= 125
°
C
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
T
C
= 25
°
C
C
= 125
°
C
–
–
–
–
1.4
–
1.8
–
7.5
13.5
7.5
T
13.5
Forward Transconductance
g
FS
80
–
–
mmhos
(V
DS
≥
2.0 V
DS(on)
, I
D
= 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
C
oss
C
rss
–
–
–
17
10
50
25
pF
pF
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
2.5
5.0
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
t
d(on)
t
d(off)
–
–
7
20
40
ns
ns
(V
DD
= 25 Vdc , I
D
^
500 mAdc,
R
G
= 25
Ω
, R
L
= 50
Ω
, V
gen
= 10 V)
Turn–Off Delay Time
11
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(I
S
= 115 mAdc, V
GS
= 0 V)
V
SD
–
–
–
–
–
–
–1.5
–115
–800
Vdc
Source Current Continuous
(Body Diode)
I
S
mAdc
mAdc
Source Current Pulsed
I
SM
2. Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%.
Rev .O
2/4
LESHAN RADIO COMPANY, LTD.
L2N7002WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
0.8
0.6
0.4
0.2
V
DS
= 10 V
T
A
= 25
°
C
25
°
C
-ā55
°
C
V
GS
= 10 V
9 V
125
°
C
8 V
7 V
6 V
5 V
4 V
3 V
0
1.0 2.0 3.0 4.0
5.0
6.0
7.0 8.0 9.0 10
0
1.0 2.0 3.0 4.0
5.0
6.0 7.0 8.0
9.0 10
V
DS,
DRAIN SOURCE VOLTAGE (VOLTS)
V
GS,
GATE SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
2.4
1.2
1.05
1.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
DS
= V
GS
I
D
= 1.0 mA
V
GS
= 10 V
I
D
= 200 mA
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-ā60
-ā60
-ā20
+ā20
+ā60
+ā100
+ā140
-ā20
+ā20
+ā60
+ā100
+ā140
T, TEMPERATURE (
°
C)
T, TEMPERATURE (
°
C)
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
Rev .O
3/4
LESHAN RADIO COMPANY, LTD.
L2N7002WT1G
SC−70 (SOT−323)
D
NOTES:
e1
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3
MILLIMETERS
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
E
H
E
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
MAX
1.00
0.10
MIN
0.032
0.000
MAX
0.040
0.004
1
2
0.7 REF
0.35
0.18
2.10
1.24
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
1.30
0.65 BSC
0.425 REF
2.10
0.026 BSC
0.017 REF
0.083
e1
L
c
H
2.00
2.40
0.079
0.095
E
A2
A
0.05 (0.002)
L
GENERIC
A1
MARKING DIAGRAM
SOLDERING FOOTPRINT*
M
XX
0.65
0.025
0.65
0.025
1
XX
M
= Specific Device Code
= Date Code
G
= Pb
−
F
ree Package
1.9
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
F
ree indicator, “G” or microdot “
G
”,
may or may not be present.
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
Rev .O
4/4
