ANHI-AUB060N08AG
| Part # | ANHI-AUB060N08AG |
| Download | ANHI-AUB060N08AG |
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
MOSFET Silicon N-Channel MOS
1. Applications
Synchronous rectification in SMPS,
Hard switching and High speed circuit
DC/DC in telecoms and inductrial
2. Features
Low drain-source on-resistance: RDS(ON) = 5.6mΩ (typ.)
High speed power switching
Enhanced body diode dv/dt capability
Enhanced avalanche ruggedness
Table 1
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
Unit
80
V
6.0
m
Ω
55.7
240
nC
A
I
D,pulse
3. Packaging
and Internal Circuit
Part Name
Package
TO220F
TO263
Marking
AUA060N08AG
AUB060N08AG
AUP060N08AG
AUN060N08AG
AUD060N08AG
AUA060N08AG
AUB060N08AG
AUP060N08AG
AUN060N08AG
AUD060N08AG
TO220
DFN5x6
TO252
TO220F
TO263
TO220
TO252
DFN5x6
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
1
Maximum ratings
At
T
j
= 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
60
Continuous drain current
1)
Pulsed drain current
2)
I
D
A
T
C
=25°C
T
C
=25°C
I
D,pulse
E
AS
V
GS
P
tot
–
240
300
20
A
Avalanche energy, single pulse
Gate source voltage (static)
Power dissipation (TO220F)
–
–
–
–
mJ
V
-20
–
static;
T
C
=25°C
30
W
Power dissipation
(TO263&TO220&TO252)
P
tot
–
–
150
W
T
C
=25°C
T
C
=25°C
Power dissipation (DFN5x6)
Storage temperature
P
tot
T
stg
T
j
–
–
–
–
74
W
-55
-55
175
175
°C
°C
Operating junction temperature
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
2
Thermal characteristics
Table 3
Thermal characteristics(TO220F)
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
5
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
60
°C/W device
on PCB, minimal footprint
Table
Thermal characteristics(TO263&TO220&TO252)
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
1
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
62
°C/W device
on PCB, minimal footprint
Table
Thermal characteristics(DFN5x6)
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
1.7
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
50
°C/W device
on PCB, minimal footprint
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
3
Electrical characteristics
at
T
j
=25°C, unless otherwise specified
Table 4
Static characteristics
Values
Typ.
–
Parameter
Symbol
Unit Note
/ Test Condition
Min.
80
2.5
–
Max.
–
V
(BR)DSS
V
(GS)th
V
V
V
GS
=0V,
I
D
=10mA
Drain-source breakdown voltage
Gate threshold voltage
V
DS
=
V
GS
,
I
D
=250uA
V
DS
=80V,
V
GS
=0V,
T
j
=25°C
3.4
–
nA
nA
1000
100
6.0
Zero gate voltage drain current
Gate-source leakage current
I
DSS
I
GSS
V
GS
=20V,
V
DS
=0V
–
–
–
V
GS
=10V,
I
D
=20A,
T
j
=25°C
5.4
mΩ
Ω
R
DS(on)
R
G
Drain-source on-state resistance
Gate resistance (Intrinsic)
–
1.2
–
f
=1MHz, open drain
Table 5
Dynamic characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
C
iss
C
oss
C
rss
–
3730
–
pF
pF
pF
Vds=40V,Vgs=0V
f=1MHz
Input capacitance
Vds=40V,Vgs=0V
f=1MHz
Output capacitance
–
–
674
–
–
Vds=40V,Vgs=0V
f=1MHz
Reverse transfer capacitance
24.24
VDD=40V,VGS=10V,RG=10
Ω
Ω
Ω
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
16.5
13.7
35.9
–
–
–
–
ns
ns
ns
ns
ID=20A
VDD=40V,VGS=10V,RG=10
ID=20A
VDD=40V,VGS=10V,RG=10
ID=20A
Turn-off delay time
Fall time
VDD=40V,VGS=10V,RG=10
ID=20A
13.45
Table 6
Gate charge characteristics
Values
Typ.
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Max.
Gate to source charge
Q
gs
–
15.9
–
nC
nC
nC
VDS=40V,VGS=0 to 10V
ID=20A
Gate to drain charge
Gate charge total
Q
gd
Q
g
–
–
13.3
55.7
–
–
VDS=40V,VGS=0 to 10V
ID=20A
VDS=40V,VGS=0 to 10V
ID=20A
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
Table 7
Reverse diode characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min.
Typ.
Max.
V
SD
t
rr
–
0.7
–
V
V
GS
=0V,
I
F
=1A,
T
j
=25°C
Diode forward voltage
Reverse recovery time
–
–
–
40.9
106.8
-3.7
–
–
–
ns
VR=40V,IF=20A, diF/dt=200A/us
Reverse recovery charge
Q
rr
I
rrm
uC
A
VR=40V,IF=20A,diF/dt=200A/us
VR=40V,IF=20A,diF/dt=200A/us
Peak reverse recovery current
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
4
Package Outlines
Figure1
:
Outline PG-TO220F
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
Figure2
:
Outline PG-TO263
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
Figure3
:
Outline PG-TO220
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
Figure4
:
OutlinePG-TO252
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
Figure5
:
Outline PG-DFN5x6
AUA060N08AG, AUB060N08AG, AUP060N08AG,
AUN060N08AG, AUD060N08AG
Revision History
Revision
Date
Subjects (major changes since last revision)
Preliminary version
1.0
1.1
2021-01-21
2021-02-04
Add package for TO263&TO220&DFN5x6&TO252
