CRMICRO-CRST041N08N
| Part # | CRMICRO-CRST041N08N |
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CRST041N08N,ꢀCRSS038N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ3.4mꢂ,ꢀ120A
华润微电子(重庆)有限公司
Features
Product Summary
V
DS
85V
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS1ꢀtechnology
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀR
DS(on)
•ꢀExcellentꢀQ
g
xR
DS(on)ꢀ
product(FOM)
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria
R
DS(on)
I
Dꢀ
3.4mꢂ
120A
Applications
•ꢀMotorꢀcontrolꢀandꢀdrive
•ꢀBatteryꢀmanagement
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)
100% Avalanche Tested
CRST041N08N
CRSS038N08N
Package Marking and Ordering Information
Partꢀ#
Marking
Package
TOꢁ220
TOꢁ263
ReelꢀSize
TapeꢀWidth
N/A
Qty
Packing
Tube
CRST041N08N
CRSS038N08N
N/A
N/A
50pcs
50pcs
ꢁ
ꢁ
Tube
N/A
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drainꢁsourceꢀvoltage
85
V
Continuousꢀdrainꢀcurrent
T
C
ꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)
T
C
ꢀ=ꢀ25°Cꢀ(Packageꢀlimit)
T
C
ꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)
172ꢀ
120
I
D
A
109ꢀ
Pulsedꢀdrainꢀcurrentꢀ(T
C
ꢀ=ꢀ25°C,ꢀt
p
ꢀlimitedꢀbyꢀT
jmax
)
I
Dꢀpulse
E
AS(Noteꢀ1)
V
GS
480ꢀ
272ꢀ
A
mJ
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25
Ω
)
GateꢁSourceꢀvoltage
±20
Powerꢀdissipationꢀ(T
C
ꢀ=ꢀ25°C)
P
tot
208ꢀ
W
°C
T
j
ꢀ,ꢀ
T
stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55…+150
※
.ꢀNotes:1.EASꢀisꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25
℃
,ꢀLꢀ=ꢀ0.5mH,ꢀIASꢀ=ꢀ33A,ꢀVGSꢀ=ꢀ10V.ꢀEAS(max)=1089mJꢀunderꢀ
IAS(max)=66AꢀandꢀaboveꢀConditions;
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST041N08N,ꢀCRSS038N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ3.4mꢂ,ꢀ120A
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Symbol
Max
0.60ꢀ
53
Unit
R
thJC
Thermalꢀresistance,ꢀjunctionꢀ–ꢀcase.
°C/W
R
thJA
Thermalꢀresistance,ꢀjunctionꢀ–ꢀambient(min.ꢀfootprint)
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drainꢁsourceꢀbreakdownꢀ
voltage
BV
DSS
V
GS
=0V,ꢀI
D
=250uA
V
DS
=V
GS
,I
D
=250uA
85
2
97
3
ꢁ
V
V
V
GS(thꢀ)
Gateꢀthresholdꢀvoltage
4
V
DS
=80V,V
GS
=0V
T
j
=25°C
Zeroꢀgateꢀvoltageꢀdrainꢀ
current
I
DSS
ꢁ
ꢁ
0.05
ꢁ
1
5
ꢃA
nA
T
j
=125°C
Gateꢁsourceꢀleakageꢀ
current
I
GSS
V
GS
=±20V,V
DS
=0V
ꢁ
10
100
V
GS
=10V,ꢀI
D
=50A
TOꢁ220
Drainꢁsourceꢀonꢁstateꢀ
resistance
R
DS(on)
ꢁ
ꢁ
ꢁ
3.4ꢀ
3.2
4.1ꢀ
3.8
ꢁ
mꢂ
S
TOꢁ263
g
fs
V
DS
=5V,I
D
=40A
Transconductance
113
Dynamic Characteristic
InputꢀCapacitance
C
iss
ꢁ
ꢁ
6050
1480
ꢁ
ꢁ
V
GS
=0V,ꢀV
DS
=42.5V,ꢀ
f=1MHz
C
oss
OutputꢀCapacitance
pF
ReverseꢀTransferꢀ
Capacitance
C
rss
ꢁ
35ꢀ
ꢁ
Q
G
Q
gs
Q
gd
t
d(on)
t
r
GateꢀTotalꢀCharge
GateꢁSourceꢀcharge
GateꢁDrainꢀcharge
Turnꢁonꢀdelayꢀtime
Riseꢀtime
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
74
23
21
32
53
59
34
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
V
GS
=10V,ꢀV
DS
=42.5V,ꢀ
I
D
=50A,ꢀf=1MHz
nC
Vds=42.5V
Id=10A
Rg=3.5ꢂ
Vgs=10V;ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
(Noteꢀ2,3)
ns
ꢂ
t
d(off)
t
f
Turnꢁoffꢀdelayꢀtime
Fallꢀtime
V
GS
=0V,ꢀV
DS
=0V,ꢀ
f=1MHz
R
G
Gateꢀresistance
ꢁ
3.3ꢀ
ꢁ
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST041N08N,ꢀCRSS038N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ3.4mꢂ,ꢀ120A
华润微电子(重庆)有限公司
Body Diode Characteristic
Value
Symbol
Parameter
Unit
V
Test Condition
min.
typ.
max.
BodyꢀDiodeꢀForwardꢀ
Voltage
V
SD
t
rr
V
GS
=0V,I
SD
=50A
ꢁ
0.9
1.4
BodyꢀDiodeꢀReverseꢀ
RecoveryꢀTime
ꢁ
ꢁ
76
97
ꢁ
ꢁ
ns
IS=30A,ꢀVGS=0V,
dIF/dt=100A/us;
BodyꢀDiodeꢀReverseꢀ
RecoveryꢀCharge
※
.ꢀNotes
Q
rr
nC
2.PulseꢀTestꢀ:ꢀPulseꢀWidthꢀ≤ꢀ300us,ꢀdutyꢀcycleꢀ≤ꢀ2%.
3.Essentiallyꢀindependentꢀofꢀoperatingꢀtemperature.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST041N08N,ꢀCRSS038N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ3.4mꢂ,ꢀ120A
华润微电子(重庆)有限公司
Typical Performance Characteristics
Figꢀ2:ꢀTransferꢀCharacteristics
Figꢀ1:ꢀOutputꢀCharacteristics
Figꢀ3:ꢀRds(on)ꢀvsꢀDrainꢀCurrentꢀandꢀ
GateꢀVoltage
Figꢀ4:ꢀRds(on)ꢀvsꢀGateꢀVoltage
7.0ꢀ
6.0ꢀ
5.0ꢀ
4.0ꢀ
3.0ꢀ
2.0ꢀ
V
GS
=10V
10
20
30
40
50
60
70
80
90
100
V
GS
(V)
I
D
(A)
Figꢀ6:ꢀCapacitanceꢀCharacteristics
Figꢀ5:ꢀRds(on)ꢀvs.ꢀTemperature
10000
1000
100
2.4ꢀ
V
GS
=10V
I
D
=50A
Ciss
2.2ꢀ
2.0ꢀ
1.8ꢀ
1.6ꢀ
1.4ꢀ
1.2ꢀ
1.0ꢀ
0.8ꢀ
0.6ꢀ
0.4ꢀ
Coss
V
GS
=0V
f=1MHz
Crss
10
0
10
20
30
40
50
25
50
75
100
125
150
175
Tj – Junction Temperature (
°
C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST041N08N,ꢀCRSS038N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ3.4mꢂ,ꢀ120A
华润微电子(重庆)有限公司
Figꢀ8:ꢀBodyꢁdiodeꢀForward
Characteristics
Figꢀ7:ꢀGateꢀChargeꢀCharacteristics
10
V
DS
=40V
I
D
=50A
8
6
4
2
0
0
10
20
30
40
50
60
70
80
Qg (nC)
Figꢀ10:ꢀDrainꢀCurrentꢀDerating
Figꢀ9:ꢀPowerꢀDissipation
140
250
120
100
80
200
150
100
50
60
40
V
GS
≥10V
20
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Figꢀ11:ꢀSafeꢀOperatingꢀArea
1000
1us
10us
Limited by
Rds(on)
100
10
1
100us
1ms
10ms
DC
Single pulse
Tc=25
˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRST041N08N,ꢀCRSS038N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ3.4mꢂ,ꢀ120A
华润微电子(重庆)有限公司
Figꢀ12:ꢀMax.ꢀTransientꢀThermalꢀImpedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
0.001
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
1Eꢁ05
0.0001
0.001
0.01
0.1
t
p
(sec)
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRST041N08N,ꢀCRSS038N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ3.4mꢂ,ꢀ120A
华润微电子(重庆)有限公司
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRST041N08N,ꢀCRSS038N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ3.4mꢂ,ꢀ120A
华润微电子(重庆)有限公司
Package Outline: TO-220-3L
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
b
4.30ꢀ
1.20ꢀ
2.20ꢀ
0.69ꢀ
1.00ꢀ
0.33ꢀ
14.70ꢀ
8.59ꢀ
11.75ꢀ
4.80ꢀ
1.45ꢀ
2.90ꢀ
0.95ꢀ
1.60ꢀ
0.65ꢀ
16.20ꢀ
9.65ꢀ
13.60ꢀ
0.169ꢀ
0.047ꢀ
0.087ꢀ
0.027ꢀ
0.039ꢀ
0.013ꢀ
0.579ꢀ
0.338ꢀ
0.463ꢀ
0.189ꢀ
0.057ꢀ
0.114ꢀ
0.037ꢀ
0.063ꢀ
0.026ꢀ
0.638ꢀ
0.380ꢀ
0.535ꢀ
b2
c
D
D1
D2
e
2.54ꢀBSC.
0.100ꢀBSC.
E
E1
H1
L
9.60ꢀ
7.00ꢀ
10.60ꢀ
8.46ꢀ
0.378ꢀ
0.276ꢀ
0.244ꢀ
0.496ꢀ
0.106ꢀ
0.478ꢀ
0.417ꢀ
0.333ꢀ
0.276ꢀ
0.583ꢀ
0.150ꢀ
0.650ꢀ
6.20ꢀ
7.00ꢀ
12.60ꢀ
2.70ꢀ
14.80ꢀ
3.80ꢀ
L1
L2
12.13ꢀ
16.50ꢀ
Q
P
2.40ꢀ
3.50ꢀ
3.10ꢀ
3.90ꢀ
0.094ꢀ
0.138ꢀ
0.122ꢀ
0.154ꢀ
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRST041N08N,ꢀCRSS038N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ3.4mꢂ,ꢀ120A
华润微电子(重庆)有限公司
Package Outline: TO-263
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
4.86ꢀ
0.25ꢀ
2.79ꢀ
0.94ꢀ
1.35ꢀ
0.65ꢀ
1.40ꢀ
9.45ꢀ
8.17ꢀ
Min.
Max.
A
A1
A2
b
4.30ꢀ
0.00ꢀ
2.34ꢀ
0.68ꢀ
1.15ꢀ
0.33ꢀ
1.17ꢀ
8.38ꢀ
6.90ꢀ
0.169ꢀ
0.000ꢀ
0.092ꢀ
0.027ꢀ
0.045ꢀ
0.013ꢀ
0.046ꢀ
0.330ꢀ
0.272ꢀ
0.191ꢀ
0.010ꢀ
0.110ꢀ
0.037ꢀ
0.053ꢀ
0.026ꢀ
0.055ꢀ
0.372ꢀ
0.322ꢀ
b2
c
c2
D
D1
e
2.54ꢀBSC.
0.100ꢀBSC.
E
9.78ꢀ
6.50ꢀ
14.61ꢀ
2.24ꢀ
0.70ꢀ
1.00ꢀ
0.00ꢀ
10.50ꢀ
8.60ꢀ
15.88ꢀ
3.00ꢀ
1.60ꢀ
1.78ꢀ
0.25ꢀ
0.385ꢀ
0.256ꢀ
0.575ꢀ
0.088ꢀ
0.028ꢀ
0.039ꢀ
0.000ꢀ
0.413ꢀ
0.339ꢀ
0.625ꢀ
0.118ꢀ
0.063ꢀ
0.070ꢀ
0.010ꢀ
E1
H
L
L1
L2
L3
©China Resources Microelectronics (Chongqing) Limited
Page 9
CRST041N08N,ꢀCRSS038N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ3.4mꢂ,ꢀ120A
华润微电子(重庆)有限公司
Revision History
Revison
1.0
Date
Majorꢀchanges
2018ꢁ02ꢁ09
2019ꢁ05ꢁ27
Releaseꢀofꢀformalꢀversion.
2.0
Supplementꢀpackageꢀoutlineꢀinfo.
Disclaimer
Unlessꢀotherwiseꢀspecifiedꢀinꢀtheꢀdatasheet,ꢀtheꢀproductꢀisꢀdesignedꢀandꢀqulifiedꢀasꢀaꢀstandardꢀcommercialꢀ
productꢀandꢀisꢀnotꢀintendedꢀforꢀuseꢀinꢀapplicationsꢀthatꢀrequireꢀextraordinaryꢀlevelsꢀofꢀqualityꢀandꢀreliability,ꢀ
suchꢀasꢀautomotive,ꢀaviation/aerospaceꢀandꢀlifeꢁsupportꢀdevicesꢀorꢀsystems.
Anyꢀandꢀallꢀsemicondutorꢀproductsꢀhaveꢀcertainꢀprobabilityꢀtoꢀfailꢀorꢀmalfunction,ꢀwhichꢀmayꢀresultꢀinꢀpersonalꢀ
injury,ꢀdeathꢀorꢀpropertyꢀdamage.ꢀCustomerꢀareꢀsolelyꢀresponsibleꢀforꢀprovidingꢀadequateꢀsafeꢀmeasuresꢀwhenꢀ
designꢀtheirꢀsystems.ꢀ
CRM(CQ)ꢀreservesꢀtheꢀrightꢀtoꢀimproveꢀproductꢀdesign,ꢀfunctionꢀandꢀreliabilityꢀwithoutꢀnotice.
©China Resources Microelectronics (Chongqing) Limited
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