Infineon-Technologies-IRF7304PBF
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PD – 95038
IRF7304PbF
HEXFET
®
Power MOSFET
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
1
2
3
4
8
7
D1
S1
G1
V
DSS
= -20V
D1
6
5
S2
D2
D2
G2
R
DS(on)
= 0.090
Ω
l
Lead-Free
Top View
Description
Fift
h
G
eneratio
n
H
EXFET
s
f
ro
m
I
nternationa
l
R
ectifie
r
u
tiliz
e
a
dvance
d
p
rocessing
techniques to achieve the lowest possible on-resistance per silicon area.
This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications.
With these improvements, multiple devices can be used in
an application with dramatically reduced board space.
The package is designed
for vapor phase, infra red, or wave soldering techniques.
Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
10 Sec. Pulsed Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
-4.7
-4.3
-3.4
-17
A
W
W/°C
V
P
D
@T
A
= 25°C
Power Dissipation
2.0
Linear Derating Factor
0.016
±12
-5.0
V
GS
Gate-to-Source Voltage
dv/dt
T
J
,
T
STG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
-55 to
+ 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
θ
JA
Maximum Junction-to-Ambient
62.5
°C/W
10/6/04
IRF7304PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-20
Conditions
V
GS
= 0V, ID = -250µA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
-0.012
V/°C Reference
to 25°C,
I
D
= -1mA
0.090
0.140
-0.70
4.0
-1.0
-25
-100
100
22
3.3
9.0
8.4
26
51
33
V
GS
= -4.5V, I
D
= -2.2A
V
GS
= -2.7V, I
D
= -1.8A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -16V, I
D
= -2.2A
R
DS(ON)
Static Drain-to-Source On-Resistance
Ω
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
Forward Transconductance
V
DS
= -16V,
V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
GS
=
–
12V
µA
nA
I
D
SS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
V
GS
= 12V
I
D
= -2.2A
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
nC V
DS
=
–
1
6V
V
GS
= -4.5V, See Fig. 6 and 12
V
DD
=
–
1
0V
Ris
e
T
ime
I
D
= -2.2A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fal
l
T
ime
R
G
= 6.0
Ω
R
D
= 4.5
Ω,
See Fig. 10
D
S
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
4.0
6.0
Between lead tip
nH
pF
G
and center of die contact
C
iss
C
oss
C
rss
Input Capacitance
610
310
170
V
GS
= 0V
Output Capacitance
V
DS
=
–
1
5V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFE
T
s
ymbol
D
S
I
S
-2.5
A
showing the
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
-17
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
-1.0
56
84
71 110
V
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= -2.2A
Q
rr
t
on
nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by
Pulse width
≤
300µs; duty cycle
≤
2%.
max. junction temperature. ( See fig. 11 )
I
SD
≤
-2.2A, di/dt
≤−
50A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
IRF7304PbF
100
10
1
100
10
1
VGS
– 7.5V
– 5.0V
– 4.0V
– 3.5V
– 3.0V
– 2.5V
– 2.0V
VGS
– 7.5V
– 5
.
0
V
– 4
.
0
V
– 3
.
5
V
– 3
.
0
V
– 2
.
5
V
– 2
.
0
V
TOP
TOP
BOTTOM – 1.5V
BOTTOM – 1.5V
-1.5V
-1.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 150°C
T
= 25°C
J
J
A
0.1
0.01
0.1
A
0.1
1
10
100
0.01
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= -3.6A
D
T =
25°C
J
T =
150°C
J
V
DS
= -15V
20µs PULSE WIDTH
5.0
A
V
= -4.5V
GS
0.1
A
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40 60 80
100 120 140 160
T ,
Junction Temperature (°C)
–
V
GS
, Gate-to-Source Voltage (V)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs
.
T
emperature
IRF7304PbF
1500
10
8
V
C
C
C
= 0V,
f = 1MHz
I
V
= -2.2A
= -16V
GS
iss
rss
oss
D
DS
= C
+ C
,
C
SHORTED
gs
gd
gd
ds
= C
= C
+ C
ds
gd
C
C
iss
1000
500
0
6
oss
C
rss
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
A
1
10
100
0
5
10
15
20
25
-V ,
Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Sourc
e
V
oltage
Gate-to-Sourc
e
V
oltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T =
150°C
J
T =
25°C
J
1ms
°
10ms
T =
25 C
A
J
°
T =
150 C
V
GS
= 0V
Single Pulse
A
0.1
0.3
0.6
0.9
1.2
1.5
1
10
100
-V ,
Source-to-Drain Voltage (V)
-V ,
Drain-to-Source Voltage (V)
DS
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forwar
d
V
oltage
IRF7304PbF
R
D
V
DS
V
GS
5.0
4.0
3.0
2.0
1.0
0.0
D.U.T.
R
G
–
+
V
DD
-4.5 V
Puls
e
W
idth
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
25
50
75
100
125
150
V
GS
°
, Case Temperature
( C)
T
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9.
Maximum Drain Current Vs.
Fig 10b.
Switching Time Waveforms
Ambien
t
T
emperature
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
=
P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fi
g
1
1.
Maximu
m
E
ffectiv
e
T
ransien
t
T
herma
l
I
mpedance
,
J
unction-to-Ambient
IRF7304PbF
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
.3
µ
F
12V
Q
G
–
-4.5 V
V
+
DS
D.U.
T
.
Q
Q
GD
GS
V
GS
V
-3mA
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 12a.
Basic Gate Charge Waveform
Fig 12b.
Gate Charge Test Circuit
IRF7304PbF
Peak Diode Recovery dv/dt Test Circuit
+
–
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.T
+
–
–
+
**
R
G
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
+
–
*
V
DD
V
GS
*
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P
.
W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple
≤
5%
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fi
g
1
3.
Fo
r
P
-Channe
l
H
EXFETS
IRF7304PbF
SO-8 Package
Outline
Dimensions are shown in milimeters (inches)
IN
C
H
ES
MI
L
LI
M
E
TERS
DIM
A
D
B
M
I
N
.0532
MAX
.0688
.0098
.020
M
I
N
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1
.
0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 B
A
S
IC
1.27 B
A
S
IC
0.635
B
A
S
I
C
e1
.
025
B
A
S
IC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F
O
OT
P
RINT
8X 0.72 [.028]
NOT
E
S :
1. DI
M
E
N
S
I
O
NING
&
T
O
L
ER
A
NC
I
N
G
P
ER
A
S
M
E Y14.5M-1994.
2.
C
O
N
T
R
O
L
LING
DI
M
E
N
S
I
O
N: MI
L
LI
M
E
TER
3. DI
M
E
N
S
I
O
NS A
R
E SH
O
WN
IN MI
L
LI
M
E
TERS
[
INCHE
S
]
.
4.
O
U
T
L INE
C
O
N
F OR MS
T O
J
EDEC
O
U T
L
INE
MS -012
A
A.
5
6
7
D
I
M
E
N
S
I
O
N DO
E
S
N
OT INC
L
UDE
M
O
L
D PR
O
T
RUSI
O
N
S
.
MO
L
D PR
O
T
RUSI
O
NS NOT
T
O E
X
C
E
ED
0
.15 [.006].
6.46 [.255]
D
I
M
E
N
S
I
O
N DO
E
S
N
OT INC
L
UDE
M
O
L
D PR
O
T
RUSI
O
N
S
.
MO
L
D PR
O
T
RUSI
O
NS NOT
T
O E
X
C
E
ED
0
.25 [.010].
D
I
M
E
N
S
I
O
N
I
S THE LEN
G
T
H
O
F
L
E
A
D
F
O
R
S
O
L
D
ERING
T
O
ASUBSTR
A
T
E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
E
X
A
M
P
LE: THIS IS
A
N
I
RF
7
101 (MO
S
FET)
DAT E
CODE (YWW)
P =
DE S I
G
N
AT E S
L E AD-F
R
E E
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
Y =
L
A
S
T
D
I
G
I
T
O
F
T
HE
Y
E
A
R
WW =
WE E K
XXXX
F
7
101
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
FIER
L
O
GO
A =
A
S S E MB
L
Y S IT E
C
ODE
L
O
T CODE
P
A
R
T NU
M
B
ER
IRF7304PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
