VBsemi-Elec-IRFU014PBF-VB
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IRFU014PBF
N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
3
5
d
Q
g
(Typ.)
Definition
0.0
3
2
at V
GS
= 10 V
0.0
37
at V
GS
= 4.5 V
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
60
21.7
3
0
d
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Power Supply
– Secondary Synchronous Rectification
DC/DC Converter
D
TO-251
•
G
S
N-Channel MOSFET
G
D
S
Top View
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
60
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
3
5
d
T
C
= 25 °C
C
= 70 °C
Continuous Drain Current (T
J
= 150 °C)
I
D
30
d
T
A
I
DM
I
AS
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
a
100
40
80
E
AS
L = 0.1 mH
T
C
= 25 °C
mJ
W
59.5
b
2.7
Maximum Power Dissipation
a
P
D
T
A
= 25 °C
c
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Symbol
Limit
46
Unit
R
thJA
°C/W
R
thJC
Junction-to-Case (Drain)
2.1
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1″ square PCB (FR-4 material).
d. Package limited.
服务热线：400-655-8788
1
IRFU014PBF
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
DS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 60
V
,
V
GS
= 0 V
60
V
2
.
0
3.5
± 250
1
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60
V
,
V
GS
= 0
V
,
T
J
= 125 °C
V
DS
= 60
V
,
V
GS
= 0
V
,
T
J
= 150 °C
V
DS
≥
10
V
,
V
GS
= 10 V
50
µA
250
On-State Drain Current
a
I
D(on)
R
DS(on)
g
fs
50
A
Ω
S
V
GS
= 10 V, I
D
=
1
2 A
0.0
3
2
0.0
3
7
110
Drain-Source On-State Resistance
a
V
GS
= 4.5 V, I
D
=
1
0 A
Forward
T
r
ansconductance
a
Dynamic
b
V
DS
= 15 V, I
D
=
1
0 A
Input Capacitance
C
iss
C
oss
C
rss
1100
281
130
46
28
7
= 30 V
, f = 1 MHz
Output Capacitance
Reverse
T
r
ansfer Capacitance
V
GS
= 0
V
,
V
DS
pF
V
DS
= 30 V, V
GS
= 10 V, I
D
=
1
0 A
V
DS
= 30 V, V
GS
= 4.5 V, I
D
=
1
0 A
f = 1 MHz
T
o
tal Gate Charge
c
Q
g
nC
Ω
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
T
u
rn-On Delay Time
c
Rise Time
c
Q
gs
Q
gd
R
g
6.7
2
0.4
4
t
d(on)
t
r
t
d(off)
t
f
8
16
18
53
18
9
V
DD
= 30
V
,
R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10
V
,
R
g
= 1
Ω
ns
T
u
rn-Off Delay Time
c
Fall Time
c
35
9
Drain-Source Body Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
I
S
I
SM
50
100
1.5
51
3
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= 10 A, V
GS
= 0 V
0.75
34
2
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= 10 A, dI/dt = 100 A/µs
34
51
nC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
IRFU014PBF
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
0.070
V
= 10 V thru 5V
GS
20
0.050
0.040
0.030
0.020
V
= 4 V
GS
V
V
= 4.5 V
= 10 V
GS
15
10
05
0
GS
0.0
0.5
1.0
1.5
2.0
0
20
40
60
80
100
V
– Drain-to-Source Voltage (V)
I
– Drain Current (A)
DS
D
Drain to Source Voltage vs. I
D
On-Resistance vs. Drain Current
5
4
3
2
1
0
0.070
0.060
0.050
0.040
0.030
0.020
T
= 150 °C
= 25 °C
J
T
= 25 °C
C
T
J
T
= 125 °C
2
C
T
= – 55 °C
C
4
0
1
2
4
6
8
10
3
5
V
– Gate-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
GS
On-Resistance vs. Gate-to-Source Voltage
Transfer Characteristics
10
8
180
135
90
45
0
I
= 10 A
D
T
= – 55 °C
C
V
= 30 V
DS
6
T
= 25 °C
V =
48 V
DS
C
V
=
V
24
DS
4
T
= 125 °C
C
2
0
0
10
20
30
40
50
0
6
12
18
24
30
I
– Drain Current (A)
Q
–
T
o
tal Gate Charge (nC)
D
g
Transconductance
Gate Charge
服务热线：400-655-8788
3
IRFU014PBF
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
2.1
1.7
1.3
0.9
0.5
T
= 150 °C
J
I
= 250 μA
D
10
T
= 25 °C
J
1
0.1
0.0
– 50
– 25
0
25
50
75 100
125 150 175
0.3
0.6
0.9
1.2
T
–
T
e
mperature (°C)
J
V
– Source-to-Drain Voltage (V)
SD
Threshold Voltage
Source-Drain Diode Forward Voltage
43
41
39
37
35
33
1500
1200
900
C
iss
I
= 250 μA
D
600
C
oss
300
C
rss
0
– 50
– 25
0
25
50
75 100
125 150 175
0
5
10
15
20
25
30
V
– Drain-to-Source Voltage (V)
T
J
–
T
e
mperature (°C)
DS
Capacitance
Drain Source Breakdown vs. Junction Temperature
2.0
1.7
1.4
1.1
0.8
0.5
50
I
= 10 A
D
30
V
= 10 V
GS
20
10
05
0
Package Limited
V
= 4.5 V
GS
– 50
– 25
0
25
50
75 100
125 150 175
0
25
50
75
100
125
150
T
– Junction
T
e
mperature (°C)
T
– Case
T
e
mperature (°C)
J
C
On-Resistance vs. Junction Temperature
Current Derating
服务热线：400-655-8788
4
IRFU014PBF
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
20
Limited by R
*
DS(on)
20
100 μA
10
1 ms
T =
150 °C
J
T =
25 °C
J
10 ms
10
100 ms
1 s, 10 s, DC
1
0.1
T
= 25 °C
C
Single Pulse
BVDSS
Limited
0.01
1
10
-6
-5
-4
-3
-2
-1
0.1
1
10
100
10
10
10
Time (s)
10
10
V
– Drain-to-Source Voltage (V)
DS
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10
-4
-3
-2
-1
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
10
服务热线：400-655-8788
5
IRFU014PBF
TOĆ251AA (DPAK)
E
A
L2
b2
c1
MILLIMETERS
INCHES
Dim
A
A1
b
b1
b2
c
c1
D
Min
2.21
0.89
0.71
0.76
5.23
0.46
0.46
5.97
6.48
Max
2.38
1.14
0.89
1.14
5.43
0.58
0.58
6.22
6.73
Min
Max
0.094
0.045
0.035
0.045
0.214
0.023
0.023
0.245
0.265
0.087
0.035
0.028
0.030
0.206
0.018
0.018
0.235
0.255
D
L3
L1
b1
E
L
2.28 BSC
0.090 BSC
e
8.89
1.91
0.89
1.15
9.53
2.28
1.27
1.52
0.350
0.075
0.035
0.045
0.375
0.090
0.050
0.060
L
L1
L2
L3
b
e
c
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5346
A1
Note: Dimension
L3 is for reference only.
服务热线：400-655-8788
6
IRFU014PBF
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
