Infineon-Technologies-IPT60R080G7
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IPT60R080G7
MOSFET
HSOF
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
TheꢀC7ꢀGOLDꢀseriesꢀ(G7)ꢀforꢀtheꢀfirstꢀtimeꢀbringsꢀtogetherꢀtheꢀbenefitsꢀof
theꢀC7ꢀGOLDꢀCoolMOS™ꢀtechnology,ꢀ4ꢀpinꢀKelvinꢀSourceꢀcapabilityꢀand
theꢀimprovedꢀthermalꢀpropertiesꢀofꢀtheꢀTOLLꢀpackageꢀtoꢀenableꢀaꢀpossible
ꢀSMDꢀsolutionꢀforꢀhighꢀcurrentꢀtopologiesꢀsuchꢀasꢀPFCꢀupꢀtoꢀ3kW
T
a
b
1
2
3
Features
4
5
6
7
8
•ꢀC7ꢀGoldꢀgivesꢀbestꢀinꢀclassꢀFOMꢀR
DS(on)
*E
oss
ꢀandꢀR
DS(on)
*Q
g
.
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀhighꢀperformanceꢀLLC)
•ꢀC7ꢀGoldꢀtechnologyꢀenablesꢀbestꢀinꢀclassꢀR
DS(on)
ꢀinꢀsmallestꢀfootprint.
•ꢀTOLLꢀpackageꢀhasꢀinbuiltꢀ4
th
ꢀpinꢀKelvinꢀSourceꢀconfigurationꢀandꢀlow
parasiticꢀsourceꢀinductanceꢀ(~1nH).
•ꢀTOLLꢀpackageꢀisꢀMSL1ꢀcompliant,ꢀtotalꢀPb-free,ꢀhasꢀeasyꢀvisual
inspectionꢀgroovedꢀleadsꢀandꢀisꢀqualifiedꢀforꢀindustrialꢀapplications
accordingꢀtoꢀJEDEC(J-STD20ꢀandꢀJESD22).
Drain
Tab
•ꢀTOLLꢀSMDꢀpackageꢀcombinedꢀwithꢀleadꢀfreeꢀdieꢀattachꢀprocessꢀenables
improvedꢀthermalꢀperformanceꢀR
th
.
Gate
Pin 1
Driver
Source
Pin 2
Source
Pin 3-8
Benefits
•ꢀC7ꢀGoldꢀFOMꢀR
DS(on)
*Q
g
ꢀꢀisꢀ15%ꢀbetterꢀthanꢀpreviousꢀC7ꢀ600Vꢀenabling
fasterꢀswitchingꢀleadingꢀtoꢀhigherꢀefficiency.
•ꢀIncreasedꢀeconomiesꢀofꢀscaleꢀbyꢀuseꢀinꢀPFCꢀandꢀPWMꢀtopologiesꢀinꢀthe
application
•ꢀC7ꢀGoldꢀcanꢀreachꢀ28m
Ω
ꢀinꢀinꢀTOLLꢀ115mm
2
ꢀfootprint,ꢀwhereasꢀprevious
BICꢀC7ꢀ600Vꢀwasꢀ40m
Ω
ꢀinꢀ150mm
2
ꢀD
2
PAKꢀfootprint.
•ꢀReducingꢀparasiticꢀsourceꢀinductanceꢀbyꢀKelvinꢀSourceꢀimproves
efficiencyꢀbyꢀfasterꢀswitchingꢀandꢀeaseꢀofꢀuseꢀdueꢀtoꢀlessꢀringing.
•ꢀTOLLꢀpackageꢀisꢀeasyꢀtoꢀuseꢀandꢀhasꢀtheꢀhighestꢀqualityꢀstandards.
•ꢀImprovedꢀthermalsꢀenableꢀSMDꢀTOLLꢀpackageꢀtoꢀbeꢀusedꢀinꢀhigher
currentꢀdesignsꢀthanꢀhasꢀbeenꢀpreviouslyꢀpossible.
Applications
PFCꢀstagesꢀandꢀPWMꢀstagesꢀ(TTF,ꢀLLC)ꢀforꢀhighꢀpower/performance
SMPSꢀe.g.ꢀComputing,ꢀServer,ꢀTelecom,ꢀUPSꢀandꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g.typ
Value
650
80
Unit
V
m
Ω
nC
A
42
I
D,pulse
83
I
D,continuous
@ T
j
<150°C 40
A
E
oss
@400V
5
µJ
Body diode di/dt
820
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPT60R080G7
PG-HSOF-8
60R080G7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
29
18
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
E
AR
I
AS
–
–
–
–
–
–
–
–
–
–
–
–
–
–
83
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
–
97
mJ
mJ
A
I
D
=5A; V
DD
=50V; see table 10
–
0.49
5.0
120
20
I
D
=5A; V
DD
=50V; see table 10
–
–
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
V/ns
V
DS
=0…400V
-20
-30
–
V
static;
30
V
AC (f>1 Hz)
167
150
150
n.a.
29
W
°C
°C
T
C
=25°C
Storage temperature
-55
-55
–
–
–
Operating junction temperature
Mounting torque
–
Ncm –
Continuous diode forward current
Diode pulse current
2)
I
S
–
A
A
T
C
=25°C
I
S,pulse
–
83
T
C
=25°C
V
DS
=0…400V,ꢀ
I
SD
<=7.7A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt
3)
dv/dt
–
–
25
V/ns
see table 8
V
DS
=0…400V,ꢀ
I
SD
<=7.7A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
di
f
/dt
–
–
–
–
820
n.a.
A/
µ
s
see table 8
V
ISO
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j max
.
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.75
62
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
°C/W device
on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction
– ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
R
thJA
–
–
35
–
45
°C/W
Soldering temperature, wave- & reflow
soldering allowed
T
sold
260
°C
reflow MSL1
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3
Max.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
3.5
4
V
DS
=
V
GS
,ꢀ
I
D
=0.49mA
–
–
–
10
1
–
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.069 0.080
0.172
V
GS
=10V,ꢀ
I
D
=9.7A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=9.7A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
–
0.8
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1640
34
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
C
oss
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
63
643
19
5
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=9.7A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=9.7A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=9.7A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
61
3.5
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=9.7A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
8
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=9.7A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=9.7A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=9.7A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=9.7A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
15
Q
g
42
Gate plateau voltage
V
plateau
5.0
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.8
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
–
V
V
GS
=0V,ꢀ
I
F
=9.7A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=9.7A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
310
3.7
26
–
–
–
ns
V
R
=400V,ꢀ
I
F
=9.7A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=9.7A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
10 µs
10
2
100 µs
1 µs
180
1 ms
10 ms
160
140
120
100
80
DC
10
1
10
0
60
10
-1
40
20
0
10
-2
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10 µs
1 µs
10
2
10
0
100 µs
1 ms
10 ms
DC
0.5
0.2
10
1
10
-1
0.1
0.05
10
0
0.02
0.01
10
-2
single pulse
10
-1
10
-2
10
-3
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
140
70
20 V
10 V
20 V
10 V
8 V
120
100
80
60
40
20
0
60
50
40
30
20
10
0
8 V
7 V
7 V
6 V
5.5 V
5 V
6 V
5.5 V
4.5 V
5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.295
0.200
5.5 V
6 V
6.5 V
7 V
0.285
0.275
0.265
0.255
0.245
0.235
0.225
0.215
0.205
0.195
0.185
0.175
10 V
0.180
0.160
0.140
0.120
20 V
98%
0.100
typ
0.080
0.060
0.040
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=9.7ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
140
12
25 °C
120 V
120
100
80
10
8
400 V
6
60
150 °C
4
40
20
0
2
0
0
2
4
6
8
10
12
0
10
20
30
40
50
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=9.7ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
100
90
80
70
60
50
40
30
20
10
0
125 °C
10
1
25 °C
10
0
10
-1
0.0
0.5
1.0
1.5
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=5ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
700
10
5
680
660
640
620
600
580
560
540
10
4
Ciss
10
3
10
2
Coss
10
1
Crss
10
0
10
-1
-60
-20
20
60
100
140
180
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
7
6
5
4
3
2
1
0
0
100
200
300
400
500
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
V
DS
R
g
1
V
D
S
(
p
ea
k
)
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀswitchingꢀtimesꢀ(ss)
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
1) partially covered with Mold Flash
MILLIMETERS
INCHES
DIM
MIN
2.20
0.70
9.70
0.42
0.40
10.28
MAX
2.40
0.90
9.90
0.50
0.60
10.58
MIN
MAX
0.094
0.035
0.390
0.020
0.024
0.416
A
b
0.087
0.028
0.382
0.017
0.016
0.405
DOCUMENT NO.
Z8B00176939
b1
b2
c
0
SCALE
D
D2
E
3.30
0.130
2
9.70
10.10
0.382
0.398
E1
E4
E5
e
7.50
8.50
0.295
0.335
0
2
4mm
9.46
1.20 (BSC)
0.372
0.047 (BSC)
H
11.48
6.55
11.88
6.75
0.452
0.258
0.468
0.266
EUROPEAN PROJECTION
H1
H2
H3
H4
N
7.15
3.59
3.26
8
0.281
0.141
0.128
8
K1
L
4.18
0.165
ISSUE DATE
28-04-2015
1.40
0.50
0.50
1.00
2.62
1.80
0.90
0.70
1.30
2.81
0.055
0.020
0.020
0.039
0.103
0.071
0.035
0.028
0.051
0.111
L1
L2
L4
L5
REVISION
01
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2017-01-27
600VꢀCoolMOSªꢀG7ꢀPowerꢀTransistor
IPT60R080G7
RevisionꢀHistory
IPT60R080G7
Revision:ꢀ2017-01-27,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2017-01-27
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2017-01-27
