Nexperia-PBSS4032ND-115
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Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Team Nexperia
PBSS4032ND
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
Rev. 01 — 30 January 2010
Product data sheet
1. Product
profile
1.1 General
description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PD.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
Optimized switching time
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick
reference data
Table 1.
Symbol
V
CEO
I
C
Quick reference data
Parameter
Conditions
Min
Typ
Max
30
Unit
V
collector-emitter voltage
open base
collector current
–
–
–
–
–
–
3.5
6
A
I
CM
peak collector current
single pulse;
A
t
p
≤
1 ms
[1]
R
CEsat
collector-emitter
I
C
= 4 A;
–
50
75
m
Ω
saturation resistance
I
B
= 400 mA
[1] Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
collector
collector
base
Simplified outline
Graphic symbol
6
5
4
1, 2, 5, 6
2
3
3
4
emitter
1
2
3
4
5
collector
collector
sym014
6
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS4032ND
SC-74
plastic surface-mounted package; 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS4032ND
ZF
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Conditions
Min
Max
30
30
5
Unit
V
collector-base voltage
open emitter
–
–
–
–
–
collector-emitter voltage
open base
V
emitter-base voltage
collector current
open collector
V
3.5
6
A
I
CM
peak collector current
single pulse;
A
t
p
≤
1 ms
I
B
base current
–
0.5
A
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
2 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
480
750
1
Unit
mW
mW
W
[1]
[2]
[3]
P
tot
total power dissipation
T
amb
≤
25
°
C
–
–
–
T
j
junction temperature
ambient temperature
storage temperature
–
150
+150
+150
°
C
T
amb
T
stg
−
55
−
65
°
C
°
C
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[3] Device
mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
006aab931
1200
(1)
P
tot
(mW)
(2)
(3)
800
400
0
−
75
−
25
25
75
125
175
(
°
C)
T
amb
(1) Ceramic
PCB, Al
2
O
3
, standard footprint
(2) FR4
PCB, mounting pad for collector 6 cm
2
(3) FR4
PCB, standard footprint
Fig 1.
Power derating curves
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
3 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
6. Thermal
characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
260
160
125
45
Unit
K/W
K/W
K/W
K/W
[1]
[2]
[3]
R
th(j-a)
thermal resistance from
in free air
–
–
–
–
–
–
–
–
junction to ambient
R
th(j-sp)
thermal resistance from
junction to solder point
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[3] Device
mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
006aab932
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.33
0.5
0.2
2
10
0.1
0.05
0.01
10
0.02
0
1
−
1
10
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
4 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
006aab933
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
0.75
0.5
10
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−
1
10
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for collector 6 cm
2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab934
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−
1
10
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
5 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
I
CBO
collector-base cut-off
V
CB
= 30 V; I
E
= 0 A
–
–
–
–
current
V
CB
= 30 V; I
E
= 0 A;
μ
A
T
j
= 150
°
C
I
CES
I
EBO
h
FE
collector-emitter
cut-off current
V
CE
= 24 V; V
BE
= 0 V
–
–
–
–
100
100
nA
nA
emitter-base cut-off
V
EB
= 5 V; I
C
= 0 A
current
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
DC current gain
V
CE
= 2 V; I
C
= 500 mA
V
CE
= 2 V; I
C
= 1 A
V
CE
= 2 V; I
C
= 2 A
V
CE
= 2 V; I
C
= 4 A
V
CE
= 2 V; I
C
= 6 A
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 50 mA
I
C
= 1 A; I
B
= 10 mA
I
C
= 2 A; I
B
= 40 mA
I
C
= 3 A; I
B
= 300 mA
I
C
= 4 A; I
B
= 400 mA
I
C
= 4 A; I
B
= 400 mA
300
500
460
400
200
100
70
–
300
–
250
–
120
–
60
–
–
V
CEsat
collector-emitter
saturation voltage
100
155
220
250
250
300
75
mV
mV
mV
mV
mV
mV
m
Ω
–
110
155
180
180
200
50
–
–
–
–
R
CEsat
V
BEsat
collector-emitter
saturation resistance
–
[1]
[1]
base-emitter
saturation voltage
I
C
= 1 A; I
B
= 100 mA
I
C
= 3 A; I
B
= 300 mA
–
–
–
0.78
0.98
0.79
0.9
V
V
V
1.1
V
BEon
base-emitter turn-on
V
CE
= 2 V; I
C
= 2 A
voltage
0.85
t
d
t
r
delay time
rise time
V
CC
= 12.5 V; I
C
= 1 A;
I
Bon
= 0.05 A;
I
Boff
=
−
0.05 A
–
–
–
–
–
–
–
23
–
–
–
–
–
–
–
ns
25
ns
t
on
t
s
turn-on time
storage time
fall time
48
ns
140
65
ns
t
f
ns
t
off
f
T
turn-off time
205
135
ns
transition frequency
V
CE
= 10 V;
I
C
= 100 mA;
MHz
f = 100 MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
–
44
–
pF
[1] Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
6 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
006aab935
006aab936
800
7.0
C
(A)
6.0
I
(1)
I
(mA) = 50
B
h
FE
45
35
40
30
600
5.0
4.0
3.0
2.0
1.0
0.0
(2)
(3)
25
15
20
400
200
0
10
5
−
1
2
3
4
10
1
10
10
10
10
(mA)
0.0
1.0
2.0
3.0
4.0
V
CE
5.0
(V)
I
C
V
CE
= 2 V
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 5.
DC current gain as a function of collector
current; typical values
Fig 6.
Collector current as a function of
collector-emitter voltage; typical values
006aab937
006aab938
1.2
1.4
V
(V)
V
BEsat
(V)
BE
(1)
(2)
(3)
0.8
1.0
0.6
0.2
(1)
(2)
(3)
0.4
0.0
10
−
1
2
3
4
−
1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
V
CE
= 2 V
I
C
/I
B
= 20
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
Fig 7.
Base-emitter voltage as a function of collector
current; typical values
Fig 8.
Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
7 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
006aab939
006aab940
1
1
V
V
CEsat
(V)
CEsat
(V)
(1)
(2)
(3)
−
1
−
1
10
10
(1)
(2)
(3)
−
2
10
−
2
10
10
10
−
1
2
3
4
−
1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
I
C
/I
B
= 20
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aab941
006aab942
3
3
10
10
R
CEsat
R
CEsat
(
Ω
)
(
Ω
)
2
2
10
10
10
10
(1)
(2)
(1)
(2)
1
1
−
1
−
1
10
10
(3)
(3)
−
2
10
−
2
10
10
10
−
1
2
3
4
−
1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
I
C
/I
B
= 20
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig 11.
Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12.
Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
8 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
8. Test
information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig 13.
BISS transistor switching time definition
V
V
CC
BB
R
R
C
B
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450
Ω
450
Ω
R2
V
I
DUT
R1
mlb826
Fig 14.
Test circuit for switching times
8.1 Quality
information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 – Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
9 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
9. Package
outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 15.
Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package Description
Packing quantity
3000
10000
-135
[2]
[3]
PBSS4032ND SOT457
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-115
-215
-235
[1] For
further information and the availability of packing methods, see
Section 14
.
[2] T1:
normal taping
[3] T2:
reverse taping
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
10 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
11. Soldering
3.45
1.95
0.55
(6
×
)
solder lands
solder resist
0.45
(6
×
)
0.95
0.95
3.3 2.825
solder paste
occupied area
0.7
(6
×
)
Dimensions in mm
0.8
(6
×
)
2.4
sot457_fr
Fig 16.
Reflow soldering footprint SOT457 (SC-74)
5.3
1.5
(4
×
)
solder lands
solder resist
occupied area
1.475
1.475
0.45
(2
×
)
5.05
Dimensions in mm
preferred transport
direction during soldering
1.45
(6
×
)
2.85
sot457_fw
Fig 17.
Wave soldering footprint SOT457 (SC-74)
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
11 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4032ND_1
20100130
Product data sheet
–
–
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
12 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
13. Legal information
13.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale —
NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General —
Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
PBSS4032ND_1
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2010
13 of 14
PBSS4032ND
NXP Semiconductors
30
V
,
3
.5 A NPN low V
CEsat
(BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data
. . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . .
4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
9
Quality information . . . . . . . . . . . . . . . . . . . . . .
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
10
Packing information
. . . . . . . . . . . . . . . . . . . .
10
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
2
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . .
13
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
13
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
13
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . .
13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V.
2010.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 January 2010
Document identifier: PBSS4032ND_1
