MSKSEMI-MS10N10
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MS10N10
Product specification
MS10N10
General Description
These N
–
C
hannel enhancement mode power field effect
transistors are
using trench DMOS technology.
This been
especially tailored to
advanced technology has
minimize on-
state resistance,
provide
superior switching
performance, and
withstand high energy pulse in the
avalanche and commutation mode.
These devices are
well suited for
high efficiency fast switching applications.
General Features
Application
1
00
V
,
12A , RDS(ON)=115mΩ@VGS=
10V Improved dv/dt capability
Fast switching
Networking
Load Switch
LED applications
Green Device Available
Reference News
PACKAGE OUTLINE
Pin Configuration
Marking
MSKSEMI
10N10
MS10N
TO-252
Copyright© Msksemi Incorporated
MS10N10
AbsoluteMaximumRatings
Tc=25
℃
unless otherwise noted
Symbol
Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
100
±
20
Gate-Sou
r
ce Voltage
V
Drain Current – Continuous (T
C
=25
℃
)
12
A
I
D
Drain Current – Continuous (T
C
=100
℃
)
7.6
A
Drain Current – Pulsed
1
I
DM
48
A
EAS
IAS
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
2
Power Dissipation (T
C
=25
℃
)
6
mJ
A
11
34.7
0.27
-55 to 150
-55 to 150
W
P
D
Power Dissipation – Derate above 25
℃
Storage
T
e
mperature Range
W/
℃
℃
T
STG
T
J
℃
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
62
Unit
℃
/W
℃
/W
—
R
θJA
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
—
R
θJC
3.1
Electrical Characteristics
(
T
=25
℃
, unless otherwise noted)
J
Off
Characteristics
Symbol
Parameter
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
Conditions
Min. Typ. Max. Unit
—
—
BV
DSS
V
GS
=0V , I
D
=250uA
100
—
V
V/
℃
uA
△
BV
DSS
/△
T
J
—
Reference to 25
℃
, I
D
=1mA
V
DS
=100V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=125
℃
V
GS
=
±
20V , V
DS
=0V
0.09
—
—
—
—
1
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
10
uA
±
100
nA
Copyright© Msksemi Incorporated
MS10N10
On Characteristics
—
—
V
GS
=10V , I
D
=10A
V
GS
=4.5V , I
D
=8A
1
1
5
120
1.6
-5
130
m
m
Static Drain-Source On-Resistance
R
DS(ON)
150
V
GS(th)
Gate Threshold Voltage
1.0
—
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=2A
△
V
GS(th)
℃
V
GS(th)
Temperature Coefficient
Forward Transconductance
mV/
—
—
gfs
8.7
S
Dynamic and switching Characteristics
Total Gate Charge
3,4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Q
g
20
3.2
3.6
18
4
Gate-Source Charge
3,4
Gate-Drain Charge
3,4
V
DS
=50V , V
GS
=10V , I
D
=2A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
Turn-On Delay Time
3,4
Rise Time
3,4
V
DD
=50V , V
GS
=10V , R
G
=3.3
I
D
=1A
Turn-Off Delay Time
3,4
Fall Time
3,4
T
d(off)
T
f
40
3
C
iss
C
oss
C
rss
R
g
Input Capacitance
1400
60
35
2
V
DS
=25V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Drain- Source
Diode Characteristics and Maximum Ratings
Symbol
Parameter
Continuous Source Current
Pulsed Source Current
Conditions
Min. Typ. Max. Unit
—
—
—
—
—
—
—
—
I
S
I
SM
V
SD
t
rr
12
24
1.2
—
A
A
V
G
=V
D
=0V , Force Current
Diode Forward Voltage
V
GS
=0V , I
S
=1A , T
J
=25
℃
V
Reverse Recovery Time
3
Reverse Recovery Charge
3
38
27
ns
nC
I
S
=1A
,
dI/dt=100A/µs
—
Q
rr
T
J
=25
℃
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
V
DD
=25V,V
GS
=10V,L=0. 1mH,I
AS
=11A.,R
G
=25
,
Starting T
J
=25
℃ .
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
2.
3.
4.
Essentially independent of operating temperature.
Copyright© Msksemi Incorporated
MS10N10
Fig.2 Continuous Drain Current vs. T
C
Fig.1
Typical Output Characteristics
TJ,Junction
T
emperature
(
℃
)
TJ,Junction
T
emperature
(
℃
)
Fig.3
Normalized RDSON vs. T
J
Fig
.
4
Normalized V
th
vs. T
J
Fig.6
Turn-On Resistance vs. I
D
Fig
.
5
Turn
–
O
n Resistance vs. V
GS
Copyright© Msksemi Incorporated
MS10N10
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
2.200
0.000
0.635
0.460
6.500
5.100
2.400
0.127
0.770
0.580
6.700
5.460
0.087
0.000
0.025
0.018
0.256
0.201
0.094
0.005
0.030
0.023
0.264
0.215
A1
b
c
D
D1
D2
4.830 REF.
0.190 REF.
E
e
6.000
2.186
9.712
6.200
2.386
10.312
0.236
0.086
0.382
0.244
0.094
0.406
L
L1
L2
L3
L4
2.900 REF.
0.114 REF.
0.063 REF.
1.400
1.700
0.055
0.067
1.600 REF.
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
Φ
θ
h
0.000
0.300
0.000
0.012
V
5.250 REF.
0.207 REF.
Suggested Pad Layout
P/N
QTY
PKG
MS10N10
TO-252
2500
Copyright© Msksemi Incorporated
MS10N10
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
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products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could
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equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
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written permission of MSKSEMI Semiconductor.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
Semiconductor productthat you intend to use.
Copyright© Msksemi Incorporated
