AGM-Semi-AGMS5N50D
| Part # | AGM-Semi-AGMS5N50D |
Download  | AGM-Semi-AGMS5N50D |
AGMS5N50D
●
General Description
Product Summary
The AGMS5N50D combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
BVDSS
RDSON
ID
device is ideal
This
for load switch and battery
protection applications.
500V
5A
1.4Ω
●
Features
■
Advance high cell density Trench technology
TO-252 Pin Configuration
■
■
Low R
DS(ON)
to minimize conductive loss
Low Gate Charge for fast switching
D
■
Low Thermal resistance
●
Application
■
MB/VGA Vcore
nd
■
■
■
SMPS 2
Synchronous Rectifier
D
S
POL application
G
BLDC Motor driver
Package Marking and Ordering Information
Quantity
Device Marking
Device
Device Package
Reel Size
Tape width
16mm
AGMS5N50D
AGMS5N50D
TO-252
2500
330mm
Tabl
e
1
.
Absolute Maximum Ratings (Tc=25
)
℃
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage (VGS=0V
）
V
V
500
±30
5
VGSS
Gate-Source Voltage (VDS=0V)
(Note 1)
Drain Current-Continuous(Tc=25
℃
)
A
A
A
I
D
c
Drain Current-Continuous(T
=100
℃
)
2.6
20
(Note 2)
I
Drain Current-Continuous@ Current-Pulsed
DM (pluse)
w
w
24.5
12
Maximum Power Dissipation(Tc=25
℃
)
Maximum Power Dissipation(Tc=100
℃
)
P
D
(Note 3)
EAS
T ,T
mJ
167
Avalanche energy
J
STG
Operating Junction and Storage Temperature Range
℃
-55 To 150
Tabl
e
2
.
Thermal Characteristic
Symbol
Typ
Max
Unit
Parameter
1
—
—
R
θJA
℃
/W
℃
/W
48.2
4.2
Thermal Resistance Junction-ambient (Steady State)
1
R
θJC
Thermal Resistance Junction-Case
1
VER1.1
AGMS5N50D
Table 3.
Symbol
On/Off States
Electrical Characteristics (TC=25
unless otherwise noted)
℃
Parameter
Conditions
Min
Typ
Max
Unit
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
500
—
V
DSS
DSS
=500V,V =0V
GS
μA
nA
I
I
=±30V,V =0V
DS
—
±
GSSF
100
V
Gate Threshold Voltage
V
V
V
V
=V ,I
=250μA
DS GS
D
GS(th)
2.4
—
—
4.0
—
V
S
g
FS
=40V,I =2.5A
D
Forward Transconductance
DS
GS
GS
2.9
=10V, I
=2.5A
D
—
—
Ω
Ω
1.4
—
1.6
—
R
Drain-Source On-State Resistance
DS(on)
=4.5V, I
=2.5A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
pF
pF
pF
iss
415
58
VDS=25V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
Reverse Transfer Capacitance
1.4
=0V,
=0V,f=1.0MHz
VGS
VDS
Rg
Gate resistance
Ω
—
—
—
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
7
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
22
VGS=10V,
VDS=250V,
ID=5A,RGEN=25Ω
d(off)
15
23
13
t
f
Q
Q
g
VGS=10V,
VDS=400V, ID=5A
gs
gd
4.9
2.3
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
5
I
A
SD
Forward on Voltage
VGS=0V,IS=5A
V
SD
1.2
V
—
ns
t
—
—
289
1.2
—
—
rr
Reverse Recovery Time
Reverse Recovery Charge
IS=5A , dI/dt=100A/µs ,
nc
TJ=25
℃
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER1.1
AGMS5N50D
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3
VER1.1
AGMS5N50D
Typical Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
4
VER1.1
AGMS5N50D
TO-252 Package Outline Data
D1
c
h
D2
b
e
MILLIMETER
Typ.
SYMBOL
MIN
MAX
D
A
2.200
0.000
0.640
2.300
2.400
0.127
0.740
0.580
6.700
A1
b
0.690
0.520
Fꢀ⭥䭰ਾꢁ
0.460
D
6.500
6.600
D1
D2
D3
E
5.334 REF
4.826 REF
3.166 REF
6.100
6.000
6.200
e
2.286 TYP
0.100
h
0.000
9.900
0.200
L
10.100
10.300
L1
L2
L3
L4
¶
2.888 REF
1.550
1.400
1.700
1.600 REF
0.800
0.600
1.100
ꢄe
1.000
1.300
ꢅe
1.200
©
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7
VER1.1
AGMS5N50D
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of
such information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the second version issued on April 3rd, 2023. This document
replaces andReplace all previously provided information.
It is a registered trademark of Shenzhen Core Control Electronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
Revision
Revision
History
Major changes
Date
2023/4/3
Ver1.1
Chang RDSON 10V(max) to 1.6Ω
8
VER1.1
