KUU-30N06
| Part # | KUU-30N06 |
Download  | KUU-30N06 |
30N06
60V/30A N-Channel MOSFET
Product Summary
Features
V
DS
R
DS(ON)
MAX
I
D
MAX
30A
•
High density cell design for ultra low R
DS(ON)
•
Fully characterized avalanche voltage and current
•
Good stability and uniformity with high E
AS
•
Excellent package for good heat dissipation
30mΩ@10
V
60V
40mΩ@4.5V
D
Application
•
Power switching application
D
D
G
S
TO-252 top view
Schematic diagram
D
S
G
Marking and pin assignment
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
Drain-Source Breakdown Voltage
60
±20
V
V
V
DS
Gate-Source Voltage
V
GS
Maximum Junction Temperature
150
°C
°C
A
T
J
Storage Temperature Range
-50 to 155
30
T
STG
Diode Continuous Forward Current
T
c
=25°C
I
S
Mounted on Large Heat Sink
Pulse Drain Current Tested
T
c
=25°C
100
30
A
A
I
DM
Continuous Drain Current@GS=10V
T
c
=25°C
T
c
=25°C
I
D
Maximum Power Dissipation
41.5
48
W
mJ
P
D
E
AS
Single pulse a
v
a
lanche energy
Note1
1/4
30N06
Electrical Characteristics (TJ=25
℃
unless otherwise noted)
Symbol Parameter
Condition
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Min
Typ Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
VGS=0V
，
ID=250μA
VDS=60V
，
VGS=0V
VGS=±20V
，
VDS=0V
VDS=VGS
，
ID=250μA
VGS=10V
，
ID=10A
VGS=4.5V
，
ID=5A
60
—
—
—
1
V
uA
nA
V
BV
(BR)DSS
—
I
DSS
—
—
±100
2.5
30
I
GSS
1.2
—
1.7
22
30
V
GS(th)
mΩ
mΩ
Drain-Source On-State Resistance
R
DS(on)
—
40
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Input Capacitance
—
—
—
1050
—
—
—
pF
pF
pF
C
I
SS
VDS=30V
，
VGS=0V
，
f=1MHz
Output Capacitance
65
C
OSS
C
RSS
Reverse Transfer Capacitance
55
Switching Characteristics
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
—
—
—
—
—
—
—
26
5.7
5.2
8.4
8.5
36
—
—
—
—
—
—
—
nC
nC
nC
nS
nS
nS
nS
Q
g
VDD=30V
，
ID=10A
，
VGS=10V
Q
gs
Q
gd
t
d(on)
t
r
VDD=30V
，
ID=10A
，
VGS=10V
，
RG=3Ω
t
d(off)
t
f
5
Source- Drain Diode Characteristics
Forward on
v
o
ltage
Tj=25
℃，
Is=10A
，
—
0.8
1.2
V
V
SD
Note1:L=0.5mH, VDD=30V, Start TJ=25
℃
.
2/4
30N06
Typical Operating Characteristics
40
10
8
V
DS
=30V
5V
10V
4V
30
6
20
VGS=3.5V
4
10
0
2
0
0
5
10
15
20
25
0
1
2
3
4
5
Qg -Total Gate Charge (nC)
VDS, Drain -Source Voltage (V)
Fig2. Typical Gate Charge Vs.Gate-Source Voltage
Fig1. Typical Output Characteristics
60
50
40
2.2
2
1.8
1.6
1.4
1.2
1
4.5V
30
10V
20
10
0
0.8
0
5
10
15
20
25
0
25
50
75
100
125
150
175
Tj – Junction Temperature (°C)
Fig3. Normalized On-Resistance Vs. Temperature
ID, Drain-Source Current (A)
Fig4. On-Resistance Vs. Drain-Source Current
10000
1000
100
10
Limit by R
DS(ON)
Ciss
1000
100
10
10us
Coss
100us
Crss
1ms
1
DC
10ms
1
0.1
0
10
20
30
40
50
60
0.1
1
10
100
VDS, Drain -Source Voltage (V)
Fig5. Maximum Safe Operating Area
VDS , Drain-Source Voltage (V)
Fig6 Typical Capacitance Vs.Drain-Source
3/4
30N06
TO-252 Package information
Dimensions in Millimeters(mm)
Dimensions In Inches
Symbol
Min
2.200
0.000
0.635
0.450
6.500
5.100
Max
2.400
0.127
0.770
0.580
6.700
5.460
Min
0.087
0.000
0.025
0.018
0.257
0.202
Max
0.095
0.005
0.030
0.023
0.265
0.216
A
A1
b
c
D
D1
D2
E
e
L
L1
L2
L3
L4
Φ
θ
4.830 REF.
0.190 REF.
6.000
2.186
9.712
6.200
2.386
10.312
2.900 REF.
1.700
1.600 REF.
0.237
0.086
0.384
0.245
0.094
0.408
0.114 REF.
0.067
0.063 REF.
1.400
0.055
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.040
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.250 REF.
0.207 REF.
4/4
