MASPOWER-MSG40T65FH

Part #MASPOWER-MSG40T65FH
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MASPOWER-MSG40T65FH
MSG40T65FH  
650V Field stop Trench IGBT  
Features  
Fast Switching & Low V

CE[sat]  

High Input Impedance  
VCE(sat) = 1.88V @ IC = 40A  
High Input Impedance  
Short circuit withstand time 10 µs  
Applications  
PFC  
UPS  
Inverter  
Welding Machine  
Absolute Maximum Ratings  
Parameter  
Symbol Value
 
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V

CES  

V

GES  

650  
±20  
80  
V
T

C

=25°C  
Collector curre  
I

C  

T

C

=100°C  
40  
120  
A
Pulsed collector current, pulse time limited by Tjmax  
Diode forward current @ T

C

= 100°C  
I

CM  

I

F  

20  
Diode pulsed current, Pulse time limited by Tjmax  
I

FM  

60  
T

C

=25°C  
Power dissipati  
280  
P

D  

W
T

C

=100°C  
120  
T

J  

-55 to175  
-55 to175  
Operating Junction and storage temperature rang  
°C  
T

stg  

Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Thermal resistance junction-to-ambien  
Thermal resistance junction-to-case for IGBT  
Thermal resistance junction-to-case for Diod  
R

θJA  

R

θJC  

R

θJC  

62.5  
0.75  
1.8  
°C/W  
1
These curves are based on the junction-to-case thermal impedance which is measured with the device  
mounted to a large heat sink, assuming maximum junction temperature of T

J(MAX)

=175°C.  
2
The R

θJA

is the sum of the thermal impedance from junction to case R

θJC

and case to ambient.  
H1.01  
Maspower  
1

MSG40T65FH  
650V Field stop Trench IGBT  
Electrical Characteristics
(Tc =25°C unless otherwise specified)  
Parameter  
Symbol  
Test Condition  
Min Typ
 
Max Unit  
Static Characteristics  
Collector-emitter breakdown voltag  
Gate-emitter threshold voltage  
Zero gate voltage collector current  
Gate-emitter leakage current  
BV

CES  

V

GE(th)  

I

CES  

I

C

= 500
μ
A, V

GE

= 0V  
V

CE

= V

GE

, I

C

= 250
μ
A  
V

CE

= 650V, V

GE

= 0V  
650  
–
–
V
4.0  
5.7  
7
–
–
–
–
1000  
±250  
2.36  
–
μ
A  
I

GES  

V

GE

= 20V, V

CE

= 0V  
–
nA  
I

C

= 40A V

GE

= 15V T

C

= 25  
1.88  
2.4  
°C  
Collector-emitter saturation voltage  
V

CE(sat)  

V
I

C

= 40A, V

GE

= 15V, T

C

= 150  
°C  
Dynamic and Switching Characteristi  
V

CE

= 400V, I

C

= 40A,  
V

GE

= 15V  
Total gate charg  
Q

g  

–
165  
–
nC  
pF  
Input capacitanc  
Reverse transfer capacitanc  
Output capacitance  
Turn-on delay time  
Rise tim  
C

ies  

C

res  

C

oes  

t

d(on)  

t

r  

–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3155  
81.5  
175  
45  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V

CE

= 25V, V

GE

= 0V,  
f = 1MHz  
50  
nS  
mJ  
nS  
V

GE

= 15V, V

CC

= 400V,  
I

C

= 40A, R

G

= 10Ω  
,
Turn-off delay time  
Fall time  
t

d(off)  

tf  
210  
55  
Turn-on switching energy  
Turn-off switching energy  
Total switching energ  
Turn-on delay time  
Rise tim  
E

on  

E

off  

E

ts  

1.6  
0.7  
2.3  
75  
Inductive Load, T

C

= 25°C  
t

d(on)  

tr  
t

d(off)  

t

f  

80  
V

GE

= 15V, V

CC

= 400V,  
Turn-off delay time  
Fall time  
305  
108  
2.1  
1.4  
1.5  
I

C

= 40A, R

G

= 10Ω  
,
Turn-on switching energy  
Turn-off switching energ  
Total switching energ  
E

on  

E

off  

E

ts  

Inductive Load, T

C

= 125°C  
mJ  
T

J

=125
℃
V

CE

=300V I

C

=40A  
Short circuit safer operation area  
SCSOA  
10  
–
–
μ
S  
R

g

=22ohm V

GE

=0-15V  
Diode Characteristics (Tc =25°C unless otherwise specified)  
I

F

=20A,T

C

=25
℃  
–
–
–
–
–
1.8  
1.6  
–
–
–
–
–
Forward voltag  
V

F  

V
I

F

=20A,T

C

=125
℃  
Reverse recovery time  
Reverse recovery current  
Reverse recovery charge  
t

rr  

I

rr  

41  
nS  
A
I

F

=20A,di/dt=200A/μS  
13.3  
310  
T

C

=25
℃  
Q

rr  

nC  
Typical Performance Characteristic  
H1.01  
Maspower  
2

MSG40T65FH  
650V Field stop Trench IGBT  
H1.01  
Maspower  
3

MSG40T65FH  
650V Field stop Trench IGBT  
H1.01  
Maspower  
4

MSG40T65FH  
650V Field stop Trench IGBT  
Package outline dimension  
H1.01  
Maspower  
5