MASPOWER-MSG40T65FH
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MSG40T65FH
650V Field stop Trench IGBT
Features
Fast Switching & Low V
CE[sat]
High Input Impedance
VCE(sat) = 1.88V @ IC = 40A
High Input Impedance
Short circuit withstand time 10 µs
Applications
PFC
UPS
Inverter
Welding Machine
Absolute Maximum Ratings
Parameter
Symbol Value
Unit
Collector-emitter voltage
Gate-emitter voltage
V
CES
V
GES
650
±20
80
V
T
C
=25°C
Collector curre
I
C
T
C
=100°C
40
120
A
Pulsed collector current, pulse time limited by Tjmax
Diode forward current @ T
C
= 100°C
I
CM
I
F
20
Diode pulsed current, Pulse time limited by Tjmax
I
FM
60
T
C
=25°C
Power dissipati
280
P
D
W
T
C
=100°C
120
T
J
-55 to175
-55 to175
Operating Junction and storage temperature rang
°C
T
stg
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal resistance junction-to-ambien
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diod
R
θJA
R
θJC
R
θJC
62.5
0.75
1.8
°C/W
1
These curves are based on the junction-to-case thermal impedance which is measured with the device
mounted to a large heat sink, assuming maximum junction temperature of T
J(MAX)
=175°C.
2
The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
H1.01
Maspower
1
MSG40T65FH
650V Field stop Trench IGBT
Electrical Characteristics
(Tc =25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ
Max Unit
Static Characteristics
Collector-emitter breakdown voltag
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
BV
CES
V
GE(th)
I
CES
I
C
= 500
μ
A, V
GE
= 0V
V
CE
= V
GE
, I
C
= 250
μ
A
V
CE
= 650V, V
GE
= 0V
650
–
–
V
4.0
5.7
7
–
–
–
–
1000
±250
2.36
–
μ
A
I
GES
V
GE
= 20V, V
CE
= 0V
–
nA
I
C
= 40A V
GE
= 15V T
C
= 25
1.88
2.4
°C
Collector-emitter saturation voltage
V
CE(sat)
V
I
C
= 40A, V
GE
= 15V, T
C
= 150
°C
Dynamic and Switching Characteristi
V
CE
= 400V, I
C
= 40A,
V
GE
= 15V
Total gate charg
Q
g
–
165
–
nC
pF
Input capacitanc
Reverse transfer capacitanc
Output capacitance
Turn-on delay time
Rise tim
C
ies
C
res
C
oes
t
d(on)
t
r
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3155
81.5
175
45
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
CE
= 25V, V
GE
= 0V,
f = 1MHz
50
nS
mJ
nS
V
GE
= 15V, V
CC
= 400V,
I
C
= 40A, R
G
= 10Ω
,
Turn-off delay time
Fall time
t
d(off)
tf
210
55
Turn-on switching energy
Turn-off switching energy
Total switching energ
Turn-on delay time
Rise tim
E
on
E
off
E
ts
1.6
0.7
2.3
75
Inductive Load, T
C
= 25°C
t
d(on)
tr
t
d(off)
t
f
80
V
GE
= 15V, V
CC
= 400V,
Turn-off delay time
Fall time
305
108
2.1
1.4
1.5
I
C
= 40A, R
G
= 10Ω
,
Turn-on switching energy
Turn-off switching energ
Total switching energ
E
on
E
off
E
ts
Inductive Load, T
C
= 125°C
mJ
T
J
=125
℃
V
CE
=300V I
C
=40A
Short circuit safer operation area
SCSOA
10
–
–
μ
S
R
g
=22ohm V
GE
=0-15V
Diode Characteristics (Tc =25°C unless otherwise specified)
I
F
=20A,T
C
=25
℃
–
–
–
–
–
1.8
1.6
–
–
–
–
–
Forward voltag
V
F
V
I
F
=20A,T
C
=125
℃
Reverse recovery time
Reverse recovery current
Reverse recovery charge
t
rr
I
rr
41
nS
A
I
F
=20A,di/dt=200A/μS
13.3
310
T
C
=25
℃
Q
rr
nC
Typical Performance Characteristic
H1.01
Maspower
2
MSG40T65FH
650V Field stop Trench IGBT
H1.01
Maspower
3
MSG40T65FH
650V Field stop Trench IGBT
H1.01
Maspower
4
MSG40T65FH
650V Field stop Trench IGBT
Package outline dimension
H1.01
Maspower
5
