Tritech-MOS-TMN2010MI

-Channel  

N

Enhancement Mosfet  

TMN2010MI  

General Description  

General Features  

V

DS

= 20V

 

I

D

=

9.8

A  

• Low R

DS(ON)  

• RoHS and Halogen-Free Compliant  

R

DS(ON

)

= 11  

(typ.)@  

mΩ  

V

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

MI:SOT-23-3L  

D

S

G

Marking: 10N02 OR 2320  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Symbol  

V

DS  

Parameter  

Rating  

Units  

Drain-Source Voltage  

20  

±

12  

9.8  

V

V

V

GS  

Gate-Sou  

r

ce Voltage  

I

D

@T

A

=25  

I

D

@T

A

=70

℃  

I

DM  

Continuous Drain Current, V

GS

@ 4.5V

1  

Continuous Drain Current, V

GS

@ 4.5V

1  

Pulsed Drain Current

2  

℃

A

5.0  

A

32  

A

Total Power Dissipation

3  

2

W

W

℃

℃

P

D

@T

A

=25

℃  

P

D

@T

A

=70

℃  

T

STG  

Total Power Dissipation

3  

0.66  

Storage Temperature Range  

Operating Junction Temperature Range  

-55 to 150  

-55 to 150  

T

J  

Thermal Data  

Symbol  

Parameter  

Max.  

Unit  

Thermal Resistance Junction-ambient

1  

120  

℃

/W  

R

θJA  

1/5  

-Channel  

N

Enhancement Mosfet  

TMN2010MI  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max.  

Units  

Off Characteristic  

V

GS

=0V, I

D

=250μA  

V

DS

=20V, V

GS

=0V,  

V

DS

=0V, V

GS

=±12V  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

20  

–

–

–

–

–

V

1.0  

μA  

nA  

I

GSS  

–

±100  

On Characteristics  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=4.5V, I

D

=8A  

V

GS

=2.5V, I

D

=5A  

V

GS(th)  

R

DS(on)  

Gate Threshold Voltage  

0.5  

0.7  

11  

16  

1.2  

14  

V

–

–

Static Drain-Source on-Resistance  

note2  

mΩ  

22.5  

Dynamic Characteristics  

C

iss  

Input Capacitance  

–

–

–

–

–

–

700  

132  

114  

15  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

=10V, V

GS

=0V,  

f=1.0MHz  

C

oss  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

C

rss  

Q

g  

V

DS

=10V, I

D

=4A,  

V

GS

=4.5V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

2

5.2  

Switching Characteristics  

Turn-on Delay Time  

–

–

–

–

9

–

–

–

–

ns  

ns  

ns  

ns  

t

d(on)  

t

r  

t

d(off)  

t

f  

V

DS

=10V,  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

25  

37  

14  

I

D

=4A, R

GEN

=3Ω,  

V

GS

=4.5V  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

–

9.8  

32  

A

A

Current  

I

SM  

Maximum Pulsed Drain to Source Diode Forward Current  

Drain to Source Diode Forward  

V

GS

=0V, I

S

=8A  

V

SD  

1.2  

V

Voltage  

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  

2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%  

2/5  

-Channel  

N

Enhancement Mosfet  

TMN2010MI  

Typical Performance Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure1:

Output Characteristics  

I

D

(A)  

I

D

(A)  

25  

25  

20  

15  

10  

5

2.5V  

20  

2.0V  

4.5V  

15  

10  

V

GS

=1.5V  

125

℃

 

25

℃  

5

0

V

GS

(V)  

V

DS

(V)  

0

0

0.5  

1

1.5  

2

2.5  

0

0.5  

1

1.5  

2.0  

2.5  

3.0  

Figure 3:

On-resistance vs. Drain Current  

R

DS(ON)

(mΩ)  

Figure 4

: Body Diode Characteristics  

I

S

(A)  

21  

1E+01  

1E+00  

1E-01  

18  

V

GS

=2.5V  

15  

12  

9

T

J

=125

℃  

25

℃  

1E-02  

1E-03  

V

GS

=4.5V  

1E-04  

1E-05  

I

D

(A)  

V

SD

(V)  

6

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

0

2

4

6

8

10  

12  

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

V

GS

(V)  

C(pF)  

5

4

3

2

V

DS

=10V  

I

D

=4A  

10

3  

C

iss  

C

oss  

C

rss  

10

2  

10

1  

1

0

V

DS

(V)  

Q

g

(nC)  

0

3

6

9

12  

15  

0

4

8

12  

16  

20  

3/5  

-Channel  

N

Enhancement Mosfet  

TMN2010MI  

Figure 8:

Normalized on Resistance vs.  

Figure 7:

Normalized Breakdown Voltage vs.  

Junction Temperature  

Junction Temperature  

R

DS

(on)  

V

BR(DSS)  

1.3  

2.5  

1.2  

1.1  

1.0  

2.0  

1.5  

1.0  

0.5  

0.9  

Tj (

℃

)  

Tj (

℃

)  

0

-100  

-50  

0

50  

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 10:

Maximum Continuous Drain Current  

Figure 9:

Maximum Safe Operating Area  

vs. Ambient Temperature  

I

D

(A

)

 

I

D

(A

)  

10  

8

10

2  

10μs  

10

1  

10

0  

100μs  

6

1ms  

4

10ms  

Limited by R

DS(on)  

10

-1  

10

-2  

DC  

T

A

=25

℃  

Single pulse  

2

0

T

A

(

℃

)  

V

DS

(V)  

1

0.01  

0.1  

10  

0

25  

50  

75  

100  

125  

150  

Figure.11:

Maximum Effective Transient Thermal  

Impedance, Junction-to-Ambient  

Zth

J-A

(

℃

/W)  

10

3  

10

2  

10

1  

D=0.5  

t1  

D=0.2  

D=0.1  

D=0.05  

D=0.02  

D=0.01  

t2  

10

0  

Notes:  

Single pulse 1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJA

+T

A  

10

-1  

T

P

(s)  

10

-6  

10

-5  

10

-4  

10

-3  

10

-2  

10

-1  

10

0  

10

1  

4/5  

:

Package Mechanical Data SOT-23-3  

L

Dimensions In Millimeters  

Symbol  

Dimensions In Inches  

Min.  

Min.  

1.050  

0.000  

1.050  

0.300  

0.100  

2.820  

1.500  

2.650  

Max.  

1.250  

0.100  

1.150  

0.500  

0.200  

3.020  

1.700  

2.950  

Max.  

0.049  

0.004  

0.045  

0.020  

0.008  

0.119  

0.067  

0.116  

A

A1  

A2  

b

c

D

0.041  

0.000  

0.041  

0.012  

0.004  

0.111  

0.059  

0.104  

E1  

E

e

0.950(BSC)  

0.037(BSC)  

e1  

L

θ

1.800  

0.300  

0°  

2.000  

0.600  

8°  

0.071  

0.012  

0°  

0.079  

0.024  

8°  

5/5