Tritech-MOS-TM60N02AD
| Part # | Tritech-MOS-TM60N02AD |
Download  | Tritech-MOS-TM60N02AD |
-Channel
N
TM60N02AD
Enhancement Mosfet
General Features
General Description
V
DS
=20V I
D
=
5
8A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
=
4.9
mΩ(typ.)@V
GS
=10V
R
DS(ON)
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
D
S
G
Marking: 60N02
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Unit
Common Ratings
20
±
12
150
–
5
5 to 150
20
V
DSS
V
GSS
T
J
Drain-Source Voltage
Gate-Source Voltage
V
°
C
°
C
A
Maximum Junction
T
e
m
p
erature
T
STG
I
S
Storage
T
e
m
perature Range
Diode Continuous Forward Current
T
C
=25
°
C
T
C
=25
°
C
T
C
=100
°
C
T
C
=25
°
C
T
C
=25
°
C
T
C
=100
°
C
Steady State
T
A
=25
°
C
T
A
=70
°
C
T
A
=25
°
C
T
A
=70
°
C
t
≤
10s
60
*
70
I
D
Continuous Drain Current
A
A
a
I
DM
Pulse Drain Current Tested
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
260
50
P
D
R
θ
JC
I
D
W
20
2.5
°
C/W
A
18
15
2.5
P
D
Maximum Power Dissipation
W
1.6
20
R
θ
JA
Thermal Resistance-Junction to Ambient
°
C/W
Steady State
L=0.5mH
L=0.5mH
50
b
I
AS
Avalanche Current, Single pulse
Avalanche Energ
y
,
S
ingle pulse
19
A
b
E
AS
mJ
212
Note a
：
*Current is limited by bond wire.
Note b
：
UIS tested and pulse width are limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
1/7
-Channel
N
TM60N02AD
Enhancement Mosfet
Electrical Characteristics
(T
A
= 25
°
C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
20
–
–
–
1
V
V
GS
=0V, I
DS
=250
µ
A
V
DS
=20V, V
GS
=0V
–
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=85
°
C
–
–
30
1
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
0
.
5
0.75
–
V
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=
±
12V, V
D
S
=
0
V
V
GS
=10V, I
DS
=
60
A
–
–
–
–
–
±
100
6.4
–
nA
5.3
3.9
T
J
=125
°
C
V
GS
=4.5V, I
DS
=
60
A
c
R
D
S
(
ON)
Drain-Source On-state Resistance
m
Ω
6.5
7.8
9
V
GS
=2.5V, I
=
5
0
A
10
DS
Diode Characteristics
c
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Charge Time
I
SD
=10A, V
G
S
=0V
–
–
–
–
–
0.7
16
9.2
7
1.1
V
ns
nC
Ω
–
–
–
–
t
a
I
DS
=20A, dl
SD
/dt=100A/
µ
s
t
b
Discharge Time
Q
rr
Reverse Recovery Charge
7.5
Dynamic Characteristics
d
R
G
C
iss
C
oss
C
r
s
s
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
2.5
2450
270
190
13
5
–
–
–
–
–
–
–
Input Capacitance
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
t
d(ON)
Turn-on Delay Time
t
r
Turn-on Rise Time
t
d
(
OF
F
)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
d
V
DD
=
1
5V, R
L
=15
Ω
,
I
DS
=1A, V
GEN
=10V,
R
G
=
6
Ω
11.6
85
ns
42
V
DS
=15V, V
GS
=4.5V,
I
DS
=25A
Q
g
Total Gate Charge
–
23
–
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
–
–
–
–
50
1.25
2.8
–
–
–
–
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V, V
GS
=10V,
I
DS
=25A
8.2
Note c
：
Pulse test ; pulse width
≤
300
µ
s, duty cycle
≤
2%.
Note d
：
Guaranteed by design, not subject to production testing.
2/7
-Channel
N
TM60N02AD
Enhancement Mosfet
Typical Operating Characteristics
Power Dissipation
Drain Current
60
90
75
60
45
30
30
15
50
40
30
20
10
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (
°
C)
T
j
– Junction
T
emperature
Safe Operation Area
Thermal Transient Impedance
500
100
3
1
Duty = 0.5
0.2
100
µ
s
0.1
0.1
0.01
1E-3
1E-4
0.05
0.02
0.01
1ms
10
10ms
DC
Single Pulse
T
C
=25
o
C
R
θ
JC
:2.5
o
C/W
1
0.01
0.1
1
10
100 300
1E-6
1E-5
1E-4
1E-3
0.01
0.1
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
3/7
-Channel
N
TM60N02AD
Enhancement Mosfet
Output Characteristics
Drain-Source On Resistance
160
140
120
100
80
12
10
8
V
GS
= 3,4,5,6,7,8,9,10V
2V
V
GS
=2.5V
V
GS
=4.5V
6
60
4
V
GS
=10V
40
1.5V
2
20
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
30
60
90
120
150
V
DS
– Drain – Source Voltage (V)
I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
20
16
12
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=25A
I
DS
=250
µ
A
4
0
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (
°
C)
4/7
-Channel
N
TM60N02AD
Enhancement Mosfet
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
= 10V
I
DS
= 25A
100
T
j
=150
o
C
10
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 4.2m
Ω
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
10
3500
3000
2500
2000
1500
1000
500
Frequency=1MHz
V
DS
= 15V
I
DS
= 25A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
10
20
30
40
50
0
5
10
15
20
25
V
DS
– Drain-Source Voltage (V)
Q
G
–
G
ate Charge (nC)
5/7
-Channel
N
TM60N02AD
Enhancement Mosfet
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
V
DS
DUT
I
AS
R
G
V
DD
V
DD
E
AS
I
L
tp
0.01
Ω
t
AV
Switching Time Test Circuit and Waveforms
V
DS
R
D
V
DS
90%
DUT
V
GS
R
G
V
DD
10%
V
GS
tp
t
d
(on)
t
r
t
d
(off)
t
f
6/7
Package Information:TO-252-3L
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
2.400
0.127
0.860
0.580
6.700
5.460
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
7/7
