KUU-20N06

20N06  

Enhancement Mode Power MOSFET  

N-Channel  

General Features  

TO-252  

●

V

DS

=60V , I

D

=20A  

D

R

DS(ON)

= 19

m

Ω

(typ)

@ V

GS

=10V  

R

DS(ON)

= 24

m

Ω

(typ)

@ V

GS

= 4.5V  

S

G

●

High density cell design for ultra low Rdson  

●

Fully characterized avalanche voltage and current  

●

Good stability and uniformity with high E

AS  

●

Excellent package for good heat dissipation  

●

Special process technology for high ESD capability  

Equivalent Circuit  

D

G

S

Application  

MARKING  

●

Power switching application  

●

Hard switched and high frequency circuits  

●

Uninterruptible power supply  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Parameter Symbol  

Limit  

60  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

±20  

V

V

GS  

Drain Current-Continuous  

20  

A

A

I

D  

Drain Current-Continuous(T

C

=100

℃

)  

Pulsed Drain Current  

I

D

(100

℃

)  

I

DM  

14  

60  

45  

A

Maximum Power Dissipation  

W

P

D  

Derating factor  

Single pulse avalanche energy

(Note 5)  

0.3  

W/

℃  

mJ  

℃

E

AS  

72  

Operating Junction and Storage Temperature Range  

-55

T

o

1

75  

T

J

,T

STG  

1/6  

20N06  

Thermal Characteristic  

Thermal Resistance,Junction-to-Case

(Note 2)  

R

θ

JC  

3.3  

℃

/W  

Electrical Characteristics (T

C

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ  

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250

μ

A  

V

DS

=60V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

60  

–

–

–

–

–

1

V

μ

A  

nA  

I

GSS  

–

±100  

Gate Threshold Voltage  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250

μ

A  

V

GS

=10V, I

D

=10A  

V

GS

=4.5V, I

D

=10A  

V

DS

=5V,I

D

=10A  

1.2  

–

1.6  

19  

24  

–

2.5  

24  

35  

–

V

m

Ω  

S

Drain-Source On-State Resistance  

Forward Transconductance  

Dynamic Characteristics

(Note4)  

Input Capacitance  

11  

C

lss  

C

oss  

C

rss  

–

–

–

973.2  

61.2  

58.8  

–

–

–

PF  

PF  

PF  

V

DS

=30V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

7

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=30V,R

L

=3

Ω  

20  

16  

23  

25  

4.5  

6.5  

V

GS

=10V,R

G

=3

Ω  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

V

DS

=30V,I

D

=10A,  

Gate-Source Charge  

V

GS

=10V  

Gate-Drain Charge  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

Diode Forward Current

(Note 2)  

Reverse Recovery Time  

V

SD  

I

S  

V

GS

=0V,I

S

=10A  

–

–

–

–

1.2  

20  

–

V

A

–

t

rr  

TJ = 25°C, IF =10A  

di/dt = 100A/

μ

s

(Note3)  

29  

49  

nS  

nC  

Reverse Recovery Charge  

Forward Turn-On Time  

Qrr  

t

on  

–

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  

Notes:  

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.  

2.

Surface Mounted on FR4 Board, t

≤

10 sec

.  

3.

Pulse Test: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2%.  

4.

Guaranteed by design, not subject to production  

5.

EAS condition:Tj=25

℃

,VDD=30V,VG=10V,L=0.5mH,Rg=25

Ω  

2/6  

20N06  

1) E

AS

test Circuit  

2) Gate charge test Circuit  

3) Switch Time Test Circuit  

3/6  

20N06  

Typical Electrical and Thermal Characteristics (Curves)  

Vds Drain-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 1 Output Characteristics  

Figure 4 Rdson-Junction Temperature  

Vgs Gate-Source Voltage (V)  

Qg Gate Charge (nC)  

Figure 2 Transfer Characteristics  

Figure 5 Gate Charge  

25  

20  

15  

10  

0

I

D

– Drain Current (A)  

Vsd Source-Drain Voltage (V)  

Figure 3 Rdson-

Drain Current  

Figure 6 Source- Drain Diode Forward  

4/6  

20N06  

Vds Drain-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 7 Capacitance vs Vds  

Figure 9 BV

DSS

vs Junction Temperature  

Vds Drain-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 8 Safe Operation Area  

Figure 10 V

GS(th)

vs Junction Temperature  

Square Wave Pluse Duration (sec)  

Figure 11 Normalized Maximum Transient Thermal Impedance  

5/6  

20N06  

Package Information  

TO-252  

E

A

E1  

c2  

b3  

c

b

e

SEE VIEW A  

GAUGE PLANE  

SEATING PLANE  

L

VIEW A  

TO-252  

S

Y

M

B

O

L

RECOMMENDED LAND PATTERN  

MILLIMETERS  

MIN.  

INCHES  

6.25 MIN.  

MAX.  

2.39  

0.13  

0.89  

5.46  

0.61  

MIN.  

MAX.  

0.094  

0.005  

0.035  

0.215  

0.024  

0.035  

0.245  

A

A1  

b

2.18  

0.086  

0.020  

0.195  

0.018  

0.018  

0.210  

0.180  

0.250  

0.150  

0.50  

4.95  

b3  

6.8 MIN.  

c

0.46  

0.46  

5.33  

4.57  

6.35  

3.81  

c2  

0.89  

6.22  

6.00  

6.73  

D

D1  

E

6.6  

0.236  

0.265  

0.236  

E1  

e

3 MIN.  

6.00  

2.29 BSC  

0.090 BSC  

0.370  

0.035  

0.035  

0.410  

0.070  

0.080  

0.040  

8

°

 

9.40  

0.90  

0.89  

10.41  

1.78  

2.03  

1.02  

8

°  

H

2.286  

L

1.5 MIN.  

4.572  

L3  

L4  

0

0

°  

0

°  

UNIT: mm  

6/6