MATSUKI-ME95N03T
| Part # | MATSUKI-ME95N03T |
Download  | MATSUKI-ME95N03T |
ME95N03T/ME95N03T-G
N-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
6m
Ω
@V
GS
=10V
The ME95N03T is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
●
R
DS(ON)
≦
9m
Ω
@V
GS
=4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Note book
●
DC/DC Converter
●
Load Switch
●
LCD Display inverter
PIN CONFIGURATION
(TO-220)
T
o
p View
e
Ordering Information
: ME95N03T (Pb-free)
ME95N03T-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
C
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
Rating
Unit
V
Drain-Source Voltage
V
DSS
30
Gate-Source Voltage
V
GSS
±20
V
T
C
=25
℃
T
C
=70
℃
88
Continuous Drain Current*
Pulsed Drain Current
I
D
A
A
74
I
DM
P
D
352
T
C
=25
℃
T
C
=70
℃
75
Maximum Power Dissipation
Operating Junction
T
e
mperature
W
53
-55 to 175
2
℃
T
J
℃/W
Thermal Resistance-Junction to Case**
R
θ
JC
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
** The device mounted on 1in
2
FR4 board with 2 oz copper.
DCC
正式發行
01
Sep, 2012-Ver1.2
ME95N03T/ME95N03T-G
N-Channel 30V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max
Unit
V
GS
=0
V
, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0
V
, V
GS
=±20V
V
DS
=30, V
GS
=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
30
1
V
V
3
±100
1
Gate-Body Leakage
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
V
GS
=10
V
, I
D
=50A
V
GS
=4.5
V
,
I
D
=35A
I
SD
=35A, V
GS
=0V
5
7
6
m
Ω
R
DS(ON)
Drain-Source On-Resistance*
Diode Forward Voltage*
9
V
SD
0.9
1.2
V
DYNAMIC
Qg
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DD
=15
V
,
V
GS
=10
V
, I
D
=35A
V
DD
=15
V
,
V
GS
=4.5
V
, I
D
=35A
V
DS
=0
V
, V
GS
=0
V
, f=1MHz
V
DS
=25
V
,
V
GS
=0
V
, f=1MHz
59
31
Qg
nC
Qgs
Qgd
Rg
10
14
Ω
1.7
2560
388
127
45
C
iss
C
oss
C
rss
t
d(on)
t
r
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
pF
45
V
DD
=15
V
, I
D
=35A,
ns
V
GS
=4.5
V
,
R
G
=6.2
Ω
68
t
d(off)
t
f
34
Notes: a, pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b, Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
02
Sep, 2012-Ver1.2
ME95N03T/ME95N03T-G
N-Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
Sep, 2012-Ver1.2
ME95N03T/ME95N03T-G
N-Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
Sep, 2012-Ver1.2
ME95N03T/ME95N03T-G
N-Channel 30V (D-S) MOSFET
TO-220 Package Outline
DCC
正式發行
05
Sep, 2012-Ver1.2
