MATSUKI-ME80N75T
| Part # | MATSUKI-ME80N75T |
Download  | MATSUKI-ME80N75T |
ME80N75T / ME80N75T-G
N- Channel 75-V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
10m
Ω
@V
GS
=10V
The ME80N75T is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management
●
DC/DC Converter
●
Load Switch
PIN CONFIGURATION
(TO-220)
T
o
p View
e
Ordering Information
: ME80N75T (Pb-free)
ME80N75T-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
C
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DSS
Limit
75
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
GSS
±25
V
T
C
=25
℃
T
C
=70
℃
93
Continuous Drain Current*
Pulsed Drain Current
I
D
A
A
78
I
DM
P
D
372
T
C
=25
℃
T
C
=70
℃
200
Maximum Power Dissipation
W
140
℃
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance-Junction to Case**
T
J
-55 to 175
0.75
℃/W
R
θ
JC
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
** The device mounted on 1in
2
FR4 board with 2 oz copper.
DCC
正式發行
01
Ma
y
, 2012-Ver1.1
ME80N75T / ME80N75T-G
N- Channel 75-V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
GS
=0
V
, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0
V
, V
GS
=±25V
V
DS
=75
V
,
V
GS
=0V
V
GS
=10
V
, I
D
=40A
I
S
=40A, V
GS
=0V
75
V
V
2.0
4.0
±100
1
nA
μ
A
m
Ω
V
I
DSS
Zero Gate Voltage Drain Current
R
DS(ON)
V
SD
Drain-Source On-Resistance*
Diode Forward Voltage *
8
10
0.9
1.2
DYNAMIC
Qg
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DD
=60
V
,
V
GS
=10
V
, I
D
=75A
V
DD
=60
V
,
V
GS
=4.5
V
, I
D
=75A
V
DS
=0
V
, V
GS
=0
V
, f=1MHz
V
DS
=20
V
,
V
GS
=0
V
, f=1MHz
134
27
Qg
nC
Qgs
36
Qgd
50
Ω
Rg
0.8
6200
437
144
60
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C
oss
C
rss
pF
t
d(on)
t
r
43
V
GS
=10
V
,
R
L
=15
Ω
V
DD
=30
V
,
R
G
=10
Ω
ns
159
47
t
d(off)
t
f
Notes: a. pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
02
Ma
y
, 2012-Ver1.1
ME80N75T / ME80N75T-G
N- Channel 75-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
Ma
y
, 2012-Ver1.1
ME80N75T / ME80N75T-G
N- Channel 75-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
Ma
y
, 2012-Ver1.1
ME80N75T / ME80N75T-G
N- Channel 75-V (D-S) MOSFET
TO-220 Package Outline
DCC
正式發行
05
Ma
y
, 2012-Ver1.1
