MATSUKI-ME4454-G
| Part # | MATSUKI-ME4454-G |
Download  | MATSUKI-ME4454-G |
ME4454/ME4454-G
N-Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
13
mΩ@V
GS
=10V
The ME4454 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technolog
y
.
T
his high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
●
R
DS(ON)
≦
18
mΩ@V
GS
=4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Note book
●
Battery Powered System
●
DC/DC Converter
●
Load Switch
PIN CONFIGURATION
(SOP-8)
T
o
p View
e
Ordering Information
: ME4454 (Pb-free)
ME4454-G (Green product- Halogen free)
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DSS
Limit
Unit
V
Drain-Source Voltage
40
±20
Gate-Source Voltage
V
GSS
V
T
A
=25
℃
T
A
=70
℃
10.6
8.5
Continuous Drain
I
D
A
A
Current( T
J
=150
℃
)
*
Pulsed Drain Current
I
DM
P
D
43
T
A
=25
℃
T
A
=70
℃
2.5
Maximum Power Dissipation
*
Operating Junction
T
e
mperature
W
1.6
T
J
-55 to 150
50
℃
R
θJA
Thermal Resistance-Junction to Ambient
*
℃
/W
*
The device mounted on 1in
2
FR4 board with 2 oz copper
DCC
正式發行
Dec, 2015-Ver2.1
01
ME4454/ME4454-G
N-Channel 40-V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
S
T
ATIC
BV
DSS
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max Unit
V
GS
=0V, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0V, V
GS
=±20V
V
DS
=40V, V
GS
=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
40
1
V
3
±100
1
V
Gate Leakage Current
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
V
GS
=10V, I
D
= 10A
V
GS
=4.5V, I
D
= 5A
I
S
=2.3A, V
GS
=0V
11
14
13
18
a
m
Ω
R
DS(ON)
Drain-Source On-State Resistance
Diode Forward Voltage
V
SD
0.7
1.2
V
DYNAMIC
Qg
T
o
tal Gate Charge
V
DS
=20V, V
GS
=10V, I
D
=10A
V
DS
=20V, V
GS
=4.5V, I
D
=10A
28
14
Qg
T
o
tal Gate Charge
nC
pF
ns
Qgs
Qgd
Ciss
Coss
Crss
t
d(on)
t
r
Gate-Source Charge
Gate-Drain Charge
Input capacitance
5.8
6.5
1259
139
93
Output Capacitance
Reverse Transfer Capacitance
T
u
rn-On Delay
T
i
me
T
u
rn-On Rise
T
i
me
T
u
rn-Off Delay
T
i
me
T
u
rn-Off Fall
T
i
me
V
DS
=15V, V
GS
=0V, f=1.0MHz
18
V
D
s
=20V, R
L
=20
Ω
V
G
s
=10V, R
G
=3.3
Ω
I
D
=1A
11
50
t
d(off)
t
f
6
Notes: a. Pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Dec, 2015-Ver2.1
02
ME4454/ME4454-G
N-Channel 40-V (D-S) MOSFET
–
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Dec, 2015-Ver2.1
03
ME4454/ME4454-G
N-Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Dec, 2015-Ver2.1
04
ME4454/ME4454-G
N-Channel 40-V (D-S) MOSFET
SOP-8 Package Outline
MILLIMETERS (mm)
Symbol
MIN
1.35
0.10
0.35
0.18
4.80
3.80
M
A
X
1.75
0.25
0.49
0.25
5.00
4.00
A
A1
B
C
D
E
e
1.27 BSC
H
L
5.80
0.40
0°
6.20
1.25
7°
θ
DCC
正式發行
Dec, 2015-Ver2.1
05
