HUASHUO-AO3401A
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AO3401A
P-Ch 30V Fast Switching MOSFETs
Description
Product Summary
V
DS
-30
54
V
The AO3401A is the high cell density trenched P-
ch MOSFE
T
s
, which provides excellent RDSON
and efficiency for most of the small power switching
and load switch applications.
R
DS(ON),typ
m
Ω
A
I
D
-4.2
The AO3401A meet the RoHS and Green Product
requirement with full function reliability approved.
⚫
⚫
⚫
⚫
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
SOT 23 Pin Configurations
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
-30
±
12
-4.2
V
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
2
A
-3.5
A
-19
A
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
T
STG
Total Power Dissipation
3
Total Power Dissipation
3
Storage
T
e
mperature Range
1.0
W
W
℃
℃
0.9
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
125
85
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
R
θ
JA
—
1
V
e
r 2.0
AO3401A
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-30
—
—
—
—
-0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-3A
-0.014
54
—
V/
℃
65
75
100
-1.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-3A
64
V
GS
=-2.5V , I
D
=-2A
84
V
GS(th)
Gate Threshold Voltage
-0.9
2.6
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
12V , V
DS
=0V
-1
I
DSS
Drain-Source Leakage Current
uA
—
-5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-3A
5.5
10.9
1.7
2.8
6.5
26.8
43.2
18
Q
g
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-3A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
Turn-On Delay Time
Rise Time
—
V
DD
=-15V , V
GS
=-4.5V ,
—
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
R
G
=3.3
, I
D
=-3A
—
—
C
iss
C
oss
C
rss
Input Capacitance
670
65
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
58
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-4.1
-1.2
Unit
A
I
S
Continuous Source Current
1,4
Diode Forward Voltage
2
V
SD
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
AO3401A
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
3
V
e
r 2.0
AO3401A
P-Ch 30V Fast Switching MOSFETs
100us
10m
100m
1s
D
T
A
=25
℃
-V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
C
+
P
D
M
x R
θJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
V
e
r 2.0
AO3401A
P-Ch 30V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
AO3401A
SO
T
-23
3000/Tape&Reel
5
V
e
r 2.0
