AGM-Semi-AGM210MAP
| Part # | AGM-Semi-AGM210MAP |
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AGM210MAP
● General Description
Product Summary
The AGM210MAP combines advanced trench
MOSFET technology with a low resistance package
to provide extremely low R
DS(ON)
.
BVDSS
20V
RDSON
ID
25A
-25A
This device is
ideal for load switch and battery
11mΩ
18mΩ
protection applications.
-20V
● Features
■ Advance high cell density Trench technology
■Low R
DS(ON)
to minimize conductive loss
■Low Gate Charge for fast switching
■Low Thermal resistance
PDFN
3.3*3.3 Pin Configuration
D1
D2
D2
D2
D1
D1
●
Application
■MB/VGA Vcore
■SMPS 2
nd
Synchronous Rectifier
G1
G2
G2
■POL application
S2
G1
S1
S1
S2
■BLDC Motor driver
Package Marking and Ordering Information
Device Marking
Device
Device Package
Quantity
Reel Size
Tape width
AGM210MAP
AGM210MAP
PDFN3.3*3.3
330mm
12mm
5000
Table 1.
Absolute Maximum Ratings (T
C
=25
)
℃
Rating
N-Ch
P-Ch
Units
Symbol
Parameter
Drain-Source Voltage (
V
GS=
0V
）
V
V
A
A
V
DS
V
GS
20
±20
25
-20
Gate-Source Voltage (
V
DS=
0V)
±20
(Note 1)
Drain Current-Continuous(T
C
=25
℃
)
-25
-16
-50
30.8
I
D
Drain Current-Continuous(TC=100
℃
)
18
70
Drain Current-Continuous@ Current-Pulsed
(Note 2)
A
IDM (pluse)
Total Power Dissipation(T
C
=25
℃
)
W
35
P
D
Total Power Dissipation(TC=100
℃
)
W
14
13
59
(Note 3)
Avalanche energy
mJ
℃
72
EAS
Operating Junction and Storage Temperature Range
-55 To 150
-55 To 150
TJ,TSTG
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
Thermal Resistance Junction-Case
1
℃
/W
R
θJC
—
3.5
1
VER2.6
AGM210MAP
Table 3. N- Channel Electrical Characteristics (TA=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
V
GS
V
DS
V
GS
=0V I
=250μA
—
—
—
—
1
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
D
20
—
V
DSS
=20V,V =0V
GS
μA
nA
I
DSS
=±12V,V =0V
DS
—
±
100
I
GSS
V
g
V
V
V
V
=V ,I
=250μA
Gate Threshold Voltage
DS GS
D
GS(th)
0.4
—
0.7
9
1.0
—
V
S
=5V,I =5A
Forward Transconductance
DS
GS
GS
D
FS
=4.5V, I
=4A
D
—
—
mΩ
mΩ
11
15
16
20
R
Drain-Source On-State Resistance
DS(on)
=2.5V, I
=3A
D
Dynamic Characteristics
—
—
—
—
950
150
99
C
C
C
Input Capacitance
pF
pF
pF
iss
VDS=10V,VGS=0V,
F=1MHZ
Output Capacitance
oss
rss
—
—
Reverse Transfer Capacitance
=0V,
=0V,f=1.0MHz
Rg
Gate resistance
VGS
VDS
—
—
—
Ω
Switching Times
Turn-on Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
nS
nS
nS
nS
nC
nC
nC
d(on)
4.0
25
t
t
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
r
VGS=4.5V,VDS=10V,
ID=4A,RGEN=3.3
Ω
d(off)
32
t
f
26
Q
Q
g
23
VGS=4.5V,
VDS=10V, ID=2A
gs
gd
2.5
4.2
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
—
—
—
—
I
25
A
SD
Forward on Voltage
VGS=0V,IS=4A
V
SD
V
1.2
—
ns
t
Reverse Recovery Time
Reverse Recovery Charge
—
—
18
IF=4A , dI/dt=100A/µs ,
rr
nc
TJ=25
℃
9.5
—
Q
rr
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: T
=25
℃
J
2
VER2.6
AGM210MAP
Table 3. P-Channel Electrical Characteristics (TA=25
℃
unless otherwisenoted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
I
V
GS
V
DS
V
GS
=0V I
=-250μA
D
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
-20
DSS
—
—
—
V
μA
nA
=-20V,V =0V
GS
-1
—
DSS
=±12V,V =0V
DS
±100
I
—
GSS
V
g
Gate Threshold Voltage
V
V
V
V
=V ,I
=-250μA
GS(th)
DS GS
D
-0.5
—
-1.0
—
-0.7
7
V
S
=-5V,I =-4A
Forward Transconductance
FS
DS
GS
GS
D
=-10V, I
=-3A
D
25
32
—
—
18
25
mΩ
mΩ
R
Drain-Source On-State Resistance
DS(on)
=-4.5V, I
=-2A
D
Dynamic Characteristics
—
—
—
—
—
—
C
C
C
Input Capacitance
Output Capacitance
iss
900
170
140
pF
pF
pF
VDS=-10V,VGS=0V,
F=1MHZ
oss
Reverse Transfer Capacitance
Gate resistance
rss
=0V,
=0V,f=1.0MHz
VGS
VDS
—
—
Rg
Switching Times
Turn-on Delay Time
—
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
d(on)
nS
nS
nS
nS
nC
nC
nC
7
t
r
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
25
74
10
16
VGS=-4.5V,VDS=-10V,
ID=-3A,RGEN=1Ω
t
d(off)
t
f
Q
g
VGS=-4.5V,
VDS=-10V, ID=-2A
Q
gs
gd
26
31
Q
Source-Drain Diode Characteristics
Source-Drain Current(Body Diode)
I
—
—
—
—
—
—
-25
-1.2
—
SD
A
Forward on Voltage
VGS=0V,IS=-3A
V
SD
V
ns
t
Reverse Recovery Time
Reverse Recovery Charge
IF=-3A , dI/dt=100A/µs ,
rr
11
4
TJ=25
℃
nc
—
Q
rr
Notes 1.The maximum current rating is packag
e
l
imited.
Notes
Notes2.RepetitiveRating
:
P
ulsewidthlimitedbymaximumjunctio
n
t
emperature
3.EAS condition: T
=25
℃
J
3
VER2.6
AGM210MAP
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
4
VER2.6
AGM210MAP
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
5
VER2.6
AGM210MAP
Typical Electrical and Thermal Characteristics
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
10%
90%
10%
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
6
VER2.6
AGM210MAP
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vds Drain-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Safe Operation Area
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
7
VER2.6
AGM210MAP
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
8
VER2.6
AGM210MAP
●Dimensions
（
PDFN
3
.
3
×
3
.
3
）
b
D
MILLIMETER
MIN MAX
0.700 0.900
0.152 REF.
0~0.05
3.000
SYMBOL
A
A1
A2
D
D1
3.200
1.135
0.480
3.100
3.450
1.935
0.400
0.750
0.500
0.480
D1
D2
E
0.935
0.280
2.900
3.150
1.535
0.200
0.550
0.300
0.180
D2
E1
E2
b
L3
L2
e
e
L
L1
L2
L3
H
0~0.100
0~0.100
0.315
ꢀe
0.515
©
©
ꢁꢂe
9
VER2.6
AGM210MAP
Disclaimer:
The information provided in this document is believed to be accurate and reliable.
however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume
any responsibility for the following consequences.Do not consider the use of such
information or use beyond its scope.
The information mentioned in this document may be changed at any time without
notice.
The products and information provided in this document do not infringe patents.
Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility
for any infringement of any other rights of third parties.The result of using such
products and information.
This document is the third version issued on May 10th, 2023. This document
replaces all
previously provided information.
It is a registered trademark of Shenzhen Core Contro
l
E
lectronics
Technology Co., Ltd.
Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights
reserved.
10
VER2.6
