Tritech-MOS-TM70P03NF
| Part # | Tritech-MOS-TM70P03NF |
Download  | Tritech-MOS-TM70P03NF |
-Channel
TM70P03NF
P
Enhancement Mosfet
General Description
General Features
=
D
• Low R
DS(ON)
V
DS
= -30V
I -70
A
• RoHS and Halogen-Free Compliant
DS(ON)
R
= 6m
Ω
(typ.) @ V
GS
=-10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
NF:DFN5x6-8L
Marking: 70P03F
Absolute Maximum Ratings
(T
A
= 25
°
C Unless Otherwise Noted)
Parameter
Symbol
Value
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
±20
V
-70
T
C
=25
℃
T
C
=75
℃
Continuous Drain Current@-10V
1
I
D
A
-40
-175
Pulsed Drain Current
2
I
DM
EAS
I
AS
A
mJ
A
Single Pulse Avalanche Energy
3
Avalanche Current
31
-70
Total Power Dissipation
4
P
D
31.2
W
°
C
T
C
=25
℃
Operating Junction and Storage Temperature Range
-55 to+150
T
J
,
T
STG
Thermal Characteristics
Parameter
Symbol
R
θJA
Value
Unit
°C/W
°C/W
Thermal Resistance from Junction-to-Ambient
1
Thermal Resistance from Junction-to-Case
1
61
4
R
θJC
1/6
-Channel
TM70P03NF
P
Enhancement Mosfet
Electrical Characteristics
T
c
= 25°C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
Drain-Source Breakdown Voltage
Gate-body Leakage current
V
(BR)DSS
l
GSS
V
GS
= 0V, I
D
= -250µA
V
DS
= 0V, V
GS
= ±20V
-30
–
–
–
±100
-1
V
–
nA
–
–
T
J
=25
℃
T
J
=55
℃
Zero Gate Voltage Drain
Current
I
DSS
V
GS(th)
R
DS(on)
g
fs
V
DS
= -24V, V
GS
= 0V
μA
V
–
–
-5
Gate-Threshold Voltage
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -12A
V
GS
= -4.5V, I
D
= -8A
V
DS
= -5V, I
D
= -20A
-1.0
-1.6
6
-2.5
8.8
14
–
–
–
Drain-Source On-Resistance
2
mΩ
S
9
Forward Transconductance
28
–
Dynamic Characteristics
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
4320
529
–
–
–
Output Capacitance
V
DS
= -15V, V
GS
=0V, f =1MHz
V
DS
= 0V, V
GS
= 0V, f=1.0MHz
pF
Reverse Transfer Capacitance
Switching Characteristics
Gate Resistance
487
R
g
Q
g
–
–
–
–
4.0
45
–
–
–
–
Ω
Total Gate Charge
V
GS
= -10V, V
DS
= -15V,
I
D
= -15A
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
8.5
12.8
nC
Turn-On Delay Time
t
d(on)
–
18.9
–
Rise Time
t
r
t
d(off)
t
f
–
–
–
15.7
64.8
36.5
–
–
–
V
GS
= -10V, V
DD
= -15V,
R
G
= 2.5
Ω
, I
D
= -15A
nS
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Diode Forward Voltage
2
V
SD
I
S
I
S
= -1A, V
GS
= 0V
–
–
–
–
-1
V
A
Continuous Source Current
1,5
V
G
=V
D
=0V , Force Current
-70
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≤
300us , duty cycle
≤
2%
3.The EAS data shows Max. rating . The test condition is V
DD
= -25V, V
GS
= -10V, L= 0.1mH, I
AS
= -25A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/6
-Channel
TM70P03NF
P
Enhancement Mosfet
Typical Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Forward Characteristics of Reverse
Figure 4. Gate Charge Characteristics
Figure 5. R
DS(on)
vs. V
GS
Figure 6. R
DS(on)
vs. I
D
3
3/6
-Channel
TM70P03NF
P
Enhancement Mosfet
Figure 7. Capacitance Characteristics
Figure 8. Safe Operating Area
Figure 9. Normalized Maximum Transient Thermal Impedance
Figure 10. Switching Time Waveform
Figure 11. Unclamped Inductive Switching
Waveform
4
4/6
-Channel
TM70P03NF
P
Enhancement Mosfet
Test Circuit
5/6
Package Mechanical Data DFN5x6-8L
:
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