HUASHUO-HSO8205
| Part # | HUASHUO-HSO8205 |
Download  | HUASHUO-HSO8205 |
HSO8205
Dual N-ch 20V Fast Switching MOSFETs
Description
Product Summary
V
DS
20
27
6
V
The HSO8205 is the low RDSON trenched N-CH
MOSFE
T
s
. This product is suitable for Lithium-ion
battery pack applications.
R
DS(ON),max
m
Ω
A
The HSO8205 meet the RoHS and Green Product
requirement with full function reliability approved.
I
D
⚫
⚫
⚫
⚫
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
TSSOP8 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
20
±
12
6
V
GS
V
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current
1
Continuous Drain Current
1
Pulsed Drain Current
2
Total Power Dissipation
3
Storage
T
e
mperature Range
A
5.4
A
24
A
P
D
@T
A
=25
℃
T
STG
1.5
W
℃
℃
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
R
θ
JA
Thermal Resistance Junction-ambient
1
—
83
℃
/W
1
V
e
r 2.0
HSO8205
Dual N-ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
20
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=4.5V , I
D
=6A
23
27
38
1.5
1
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=2.5V , I
D
=5.2A
V
GS
=V
DS
, I
D
=250uA
V
DS
=20V , V
GS
=0V , T
J
=25
℃
V
GS
=
±
12V , V
DS
=0V
V
DS
=5V , I
D
=3.5A
30
V
GS(th)
I
DSS
I
GSS
gfs
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
0.9
—
V
uA
nA
S
—
±
100
—
21
Q
g
6.1
1.7
1.4
10
—
V
DS
=10V , V
GS
=4.5V , I
D
=3A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
Turn-On Delay Time
Rise Time
—
V
DD
=10V , V
GS
=4.5V , R
G
=3
8.2
2.5
6
—
ns
I
D
=1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
522
124
148
—
V
DS
=8V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
6
Unit
A
I
S
Continuous Source Current
1,4
Diode Forward Voltage
2
V
SD
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSO8205
Dual N-ch 20V Fast Switching MOSFETs
TSSOP8 Package Outline Dimensions
5
V
e
r 2.0
