ETERNAL-ET4410
| Part # | ETERNAL-ET4410 |
Download  | ETERNAL-ET4410 |
Eternal Semiconductor Inc.
ET4410
N-Channel Enhancement-Mode MOSFET (30V, 10A)
PRODUCT SUMMARY
V
DSS
I
D
R
DS(on)
(mΩ) Typ.
9 @ VGS = 10V, ID=6.9A
30V
10A
Features
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
• Lead
（
Pb
）
-free and halogen-free
Pin 1 / 2 / 3: Source
Pin 4: Gate
Pin 5 / 6 / 7 / 8: Drain
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Ratings
Symbol
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
30
V
V
±20
Drain Current (Continuous)@TA=25°C
10
A
I
D
I
DM
P
D
I
S
Drain Current (Continuous)@TA=75°C
Drain Current (Pulsed)
a
8
A
50
2.5
A
Total Power Dissipation @T
A
=25°C
W
W
A
Total Power Dissipation @T
A
=75°C
Maximum Diode Forward Current
1.3
1.7
T
j
, T
stg
Operating Junction and Storage Temperature Range
-55 to +150
50
°C
°C/W
Thermal Resistance Junction to Ambient (PCB mounted)
b
R
QJA
a: Repetitive Rating: Pulse width limited by the maximum junction temperature.
b: 1-in
2
2oz Cu PCB board
DS-ET4410-EN-REV1.0
Page 1 of 5
Eternal Semiconductor Inc.
ET4410
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min. Typ. Max. Unit
•
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
33
–
V
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
–
–
–
–
1
μA
±100
nA
•
On Characteristics
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=10A
V
GS(th)
Gate Threshold Voltage
1.0
–
1.7
9
2.2
12
V
Drain-Source On-State
R
DS(on)
mΩ
Resistance
V
GS
=4.5V, I
D
=5.8A
–
13
15
•
Dynamic Characteristics
C
iss
Input Capacitance
–
–
710
155
–
–
C
oss
Output Capacitance
V
DS
=15V, V
GS
=0V, f=1MHz
PF
C
rss
Reverse Transfer Capacitance
–
145
–
•
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
8
3.3
2.7
7
–
–
–
–
–
–
–
V
DS
=15V, I
D
=9A, V
GS
=4.5V
nC
nS
V
V
DD
=15V, R
L
=15Ω, I
D
=1A,
V
GEN
=10V, RG=6Ω
7
t
d(off)
t
f
22
7
•
Drain-Source Diode Characteristics
Drain-Source Diode Forward
V
GS
=0V, I
S
=2.0A
V
SD
–
–
1.2
Note: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
DS-ET4410-EN-REV1.0
Page 2 of 5
Eternal Semiconductor Inc.
ET4410
Typical Characteristics Curves
(Ta=25°C, unless otherwise note)
DS-ET4410-EN-REV1.0
Page 3 of 5
Eternal Semiconductor Inc.
ET4410
ET4410 PACKAGE OUTLINE DIMENSIONS
DS-ET4410-EN-REV1.0
Page 5 of 5
