FUXINSEMI-S8550

Part #	FUXINSEMI-S8550
Download	FUXINSEMI-S8550

FEATURES



High Collector Current

SOT-23



Complementary to S8050

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)

Symbol

V

CBO

V

CEO

V

EBO

I

C

Parameter

Value

Unit

V

Collector-Base Voltage

-40

Collector-Emitter Voltage

Emitter-Base Voltage

-25

V

-5

V

Collector Current

-0.5

A

Collector Power Dissipation

Thermal Resistance From Junction

T

o Ambient

Junction

T

e

m

perature

300

mW

℃

/W

℃

P

C

417

R

ΘJA

T

j

150

Storage

T

e

m

perature

T

stg

-55

～

+150

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)

Parameter

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

T

e

st conditions

I

C

= -100

μ

A, I

E

=0

I

C

=-1mA, I

B

=0

Min

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-40

-25

-5

V

V

V

I

E

= -100

μ

A, I

C

=0

V

CB

= -40

V

,

I

E

=0

-0.1

-0.1

-0.1

400

μ

A

μ

A

μ

A

Collector cut-off current

I

CEO

V

CE

= -20

V

,

I

B

=0

Emitter cut-off current

I

EBO

V

EB

= -3

V

,

I

C

=0

h

FE(1)

V

CE

= -1

V

,

I

C

= -50mA

V

CE

= -1

V

,

I

C

= -500mA

I

C

=-500mA, I

B

= -50mA

I

C

=-500mA, I

B

= -50mA

120

50

DC current gain

h

FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V

CE

(sat)

V

BE

(sat)

-0.6

-1.2

V

V

V

CE

= -6

V

,

I

C

= -20mA

f=

30MHz

Transition frequency

150

MHz

f

T

CLASSIFICATION OF

h

FE(1)

RANK

L

H

J

RANGE

120

–

200

200

–

350

2TY

300

–

400

MARKING

www.fuxinsemi.com

Page 1

Ver2.1

V

CE

I

C

——

I

C

h

FE

——

-90

-80

-70

-60

500

-400uA

COMMON

EMITTER

T

a

=25

℃

T

a

=100

℃

-360uA

-320uA

-280uA

T

a

=25

℃

-240uA

-200uA

-160uA

100

-50

-40

-30

-120uA

-80uA

-20

-10

-0

I

B

=-40uA

COMMON EMITTER

V

CE

=-1V

10

-0

-2

-4

-6

-8

-10

-12

-1

-10

-100

-500

COLLECTOR-EMITTER VOLTAGE

V

CE

(V)

COLLECTOR CURRENT

I

C

(mA)

I

C

V

BEsat

——

V

CEsat

——

I

C

-1200

-500

-800

-100

β

=10

-500

β

=10

-500

-10

-400

-500

-1

-10

-100

-1

-10

-100

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR CURRENT

I

C

(mA)

f

T

——

I

C

—— V

BE

I

C

400

-100

100

-10

COMMON EMITTER

V

CE

=-6V

COMMON EMITTER

V

CE

=-1V

T

a

=25

℃

10

-1

-1

-10

-100

-0

-300

-600

-900

-1200

COLLECTOR CURRENT

I

C

(mA)

BASE-EMMITER VOLTAGE

V

BE

(mV)

C

ob

/C

ib

—— V

CB

/V

EB

P

C

—— T

a

400

300

200

100

0

50

C

ib

C

ob

10

f=1MHz

I

E

=0/I

C

=0

T

a

=25

℃

1

-0.1

0

25

50

75

100

125

150

-1

-10

-20

REVERSE VOLTAGE

V

(V)

AMBIENT TEMPERATURE

T

a

(

℃

)

www.fuxinsemi.com

Page 2

Ver2.1

SOT-23 Package Information

Dimensions In Millimeters

Dimensions In Inches

Min.

Symbol

Min.

0.900

0.000

0.900

0.300

0.080

2.800

1.200

2.250

Max.

1.150

0.100

1.050

0.500

0.150

3.000

1.400

2.550

Max.

0.045

0.004

0.041

0.020

0.006

0.118

0.055

0.100

A

A1

A2

b

0.035

0.000

0.035

0.012

0.003

0.110

0.047

0.089

c

D

E

E1

e

0.950 TYP.

0.550 REF.

0.037 TYP.

0.022 REF.

e1

L

1.800

0.300

2.000

0.500

0.071

0.012

0.079

0.020

L1

www.fuxinsemi.com

Page 3

Ver2.1

Pinning information

Pin

Simplified outline

Symbol

C

B

E

Marking

Type number

S8550

Marking code

2TY

Suggested solder pad layout

SOT-23

0.037(0.95)

0.037(0.95)

0.079(2.0)

0.035(0.90)

0.031(0.80)

Dimensions in inches and (millimeters)

Reel packing

INNER

BOX

(m/m)

REEL

DIA,

(m/m)

CARTON

SIZE

(m/m)

COMPONENT

SPACING

APPROX.

BOX

(pcs)

PACKAGE

REEL SIZE

REEL

(pcs)

GROSS WEIGHT

CARTON

(pcs)

(kg)

(m/m)

SOT-23

3,000

4.0

30,000 183*123*183

178

382*257*387

240,000

11.6

7″

www.fuxinsemi.com

Page 4

Ver2.1

Suggested thermal profiles for soldering processes

1.Storage environment:

T

e

mperature=5

o

C~40

o

C Humidity=55%

25%

2.Reflow soldering of surface-mount devices

Critical Zone

TL to TP

Tp

TP

Ramp-up

TL

TL

T

s

max

T

s

min

tS

Preheat

Ramp-down

25

t25

o

C to Peak

Time

3.Reflow soldering

Profile Feature

Soldering Condition

Average ramp-up rate(T

L

to T

P

)

<3

o

C/sec

Preheat

–

T

e

mperature Min(

T

s

min)

–

T

e

mperature Max(

T

s

max)

-Time(min to max)(t

s

)

150

o

C

200

o

C

60~120sec

T

s

max to T

L

-Ramp-upRate

<3

o

C/sec

Time maintained above:

–

T

e

mperature(T

L

)

-Time(t

L

)

217

o

C

60~260sec

Peak

T

e

mperature(T

P

)

255

o

C-0/+5

o

C

Time within 5

o

C of actual Peak

T

e

mperature(t

P

)

10~30sec

Ramp-down Rate

<6

o

C/sec

Time 25

o

C to Peak

T

e

mperature

<6minutes

www.fuxinsemi.com

Page 5

Ver2.1