onsemi-2N7002LT3G
| Part # | onsemi-2N7002LT3G |
Download  | onsemi-2N7002LT3G |
MOSFET
– N-Channel,
Small Signal, SOT-23
60
V
,
1
15 mA
2N7002L, 2V7002L
Features
•
2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
P
P
A
P Capable (2V7002L)
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
7.5
W
@ 10
V
,
60 V
115 mA
500 mA
N
−
Channel
3
MAXIMUM RATINGS
Rating
Drain
−
Source Voltage
Symbol
Value
60
Unit
Vdc
V
DSS
DGR
Drain
−
Gate Voltage (R
= 1.0 M
W
)
V
60
Vdc
GS
1
Drain Current
I
I
ꢀ
115
ꢀ
75
ꢀ
800
mAdc
D
D
C
I
DM
C
2
Gate
−
Source Voltage
−
Continuous
MARKING
DIAGRAM
V
GSM
ꢀ
20
ꢀ
40
Vdc
Vpk
3
GS
V
−
Non
−
repetitive (t
≤
50
m
s)
p
1
THERMAL CHARACTERISTICS
Characteristic
702 M
G
2
Symbol
Max
Unit
G
SOT
−
23
CASE 318
STYLE 21
T
o
tal Device Dissipation FR
−
5 Board
P
1
D
225
1.8
556
mW
mW/
°
C
°
C/W
A
Derate above 25
°
C
Thermal Resistance, Junction
−
to
−
Ambient
702
M
= Device Code
= Date Code*
R
q
JA
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
T
o
tal Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction
−
to
−
Ambient
P
D
300
2.4
417
mW
mW/
°
C
°
C/W
A
*Date Code orientation and/or position may
vary depending upon manufacturing location.
R
q
JA
Junction and Storage
T
e
mperature
T , T
−
ꢀ
55 to
+150
°
C
J
stg
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The
Power Dissipation of the package may result in a lower continuous drain
current.
†
Device
Package
Shipping
2N7002LT1G
2N7002LT3G
2N7002LT7G
2V7002
L
T
1G
2V7002LT3G
3,000
T
a
pe & Reel
10,000
T
a
pe & Reel
3,500
T
a
pe & Reel
3,000
T
a
pe & Reel
10,000
T
a
pe & Reel
SOT
−
23
(Pb
−
Free)
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
3. FR
−
5 = 1.0 x 0.75 x 0.062 in.
4. Alumina
= 0.4 x 0.3 x 0.025 in 99.5% alumina.
SOT
−
23
(Pb
−
Free)
2N7002LT1H*
2N7002LT7H*
3,000
T
a
pe & Reel
3,500
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
*Not for new design.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2019
−
Rev. 10
2N7002L/D
2N7002L, 2V7002L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
Source Breakdown Voltage
V
60
−
−
Vdc
(BR)DSS
(V =
0, I
= 10
m
Adc)
GS
D
Zero Gate Voltage Drain Current
(V =
0, V
= 60 Vdc)
T =
25
°
C
J
I
−
−
−
−
1.0
500
m
Adc
nAdc
nAdc
J
DSS
T =
125
°
C
GS
DS
Gate
−
Body Leakage Current, Forward
I
−
−
100
GSSF
GSSR
(V =
20 Vdc)
GS
Gate
−
Body Leakage Current, Reverse
I
−
−
−
100
(V =
−
ꢀ
20 Vdc)
GS
Gate Threshold Voltage
V
I
1.0
−
−
2.5
Vdc
mA
Vdc
GS(th)
(V =
V ,
I =
250
m
Adc)
DS
GS
D
On
−
State Drain Current
(V
≥
2.0 V
, V
= 10 Vdc)
500
−
D(on)
DS
DS(on) GS
Static Drain
−
Source On
−
State Voltage
(V =
10 Vdc, I
= 500 mAdc)
V
DS(on)
−
−
−
−
3.75
0.375
GS
D
(V =
5.0 Vdc, I
= 50 mAdc)
GS
D
Static Drain
−
Source On
−
State Resistance
(V =
10
V
, I
=
5
00 mAdc)
r
Ohms
mS
DS(on)
T =
25
°
C
C
−
−
−
−
−
−
−
−
7.5
13.5
7.5
GS
D
T
= 125
°
C
C
(V =
5.0 Vdc, I
= 50 mAdc)
T =
25
°
C
C
GS
D
T
C
= 125
°
C
13.5
Forward Transconductance
(V
≥
2.0 V
, I
= 200 mAdc)
g
FS
80
−
−
DS
DS(on)
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
−
−
−
50
25
pF
pF
pF
iss
(V =
25 Vdc, V
= 0, f = 1.0 MHz)
DS
GS
Output Capacitance
C
oss
(V =
25 Vdc, V
= 0, f = 1.0 MHz)
DS
GS
Reverse Transfer Capacitance
(V =
25 Vdc, V
= 0, f = 1.0 MHz)
C
5.0
rss
DS
GS
Turn
−
On Delay Time
t
−
−
−
−
20
40
ns
ns
d(on)
(V =
25 Vdc, I
^
500 mAdc,
= 10 V)
gen
DD
D
R
= 25
W
, R
= 50
W
, V
G
L
Turn
−
Off Delay Time
t
d(off)
BODY
−
DRAIN DIODE RATINGS
Diode Forward On
−
Voltage
V
−
−
−
−
−
−
−
1.5
−
115
−
800
Vdc
SD
(I =
115 mAdc, V
= 0 V)
S
GS
Source Current Continuous
(Body Diode)
I
mAdc
mAdc
S
Source Current Pulsed
I
SM
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
2
2N7002L, 2V7002L
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
V
= 10 V
T =
25
°
C
DS
A
25
°
C
-ꢀ55
°
C
0.8
0.6
0.4
0.2
V
= 10 V
9 V
GS
125
°
C
8 V
7 V
6 V
5 V
4 V
3 V
0
1.0 2.0 3.0 4.0
5.0
6.0
7.0 8.0 9.0 10
0
1.0 2.0 3.0 4.0
5.0
6.0 7.0 8.0
9.0 10
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
V ,
GATE SOURCE VOLTAGE (VOLTS)
GS
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
2.4
1.2
1.05
1.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= V
GS
= 1.0 mA
V
I
= 10 V
= 200 mA
DS
GS
D
D
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-ꢀ60
-ꢀ20
+ꢀ20
+ꢀ60
+ꢀ100
+ꢀ140
-ꢀ60
-ꢀ20
+ꢀ20
+ꢀ60
+ꢀ100
+ꢀ140
T, TEMPERATURE (
°
C)
T, TEMPERATURE (
°
C)
Figure 3. Temperature versus Static
Figure 4. Temperature versus Gate
Threshold Voltage
Drain
−
Source On
−
Resistance
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
