onsemi-FDC610PZ
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FDC610PZ
P-Channel PowerTrench
®
MOSFET
–30V, –4.9A, 42m
Ω
General Description
Features
This P-Channel MOSFET is produced using
ON
Max r
DS(on)
= 42m
Ω
at V
GS
= –10V, I
D
= –4.9A
Max r
DS(on)
= 75m
Ω
at V
GS
= –4.5V, I
D
= –3.7A
Low gate charge (17nC typical).
Semiconductor’s advanced PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management,
battery charging
circuits, and
DC/DC conversion.
High performance trench technology for extremely low r
DS(on).
SuperSOT
TM
–6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
Application
RoHS Compliant
DC – DC Conversion
S
D
D
D
G
D
6
5
4
1
2
D
D
G
D
S
3
3
D
Pin 1
SuperSOT
TM
-6
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
–30
±25
V
V
(Note 1a)
–4.9
I
D
A
–20
Power Dissipation
(Note 1a)
(Note 1b)
1.6
P
D
W
Power Dissipation
0.8
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
78
°C/W
156
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8mm
Quantity
.610Z
FDC610PZ
SSOT6
7’’
3000units
1
©2007
Semiconductor Components Industries, LLC.
October-2017,
Rev.
2
Publication Order Number:
FDC610PZ/D
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= –250
µ
A, V
GS
= 0V
D
= –250
µ
A, referenced to 25°C
–30
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
–22
mV
/°
C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= –24V, V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
–1
µ
A
µ
A
±10
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= –250
µ
A
–1
–2.2
6
–3
V
∆
V
GS(th)
∆
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= –250
µ
A, referenced to 25°C
mV/°C
V
GS
= –10
V
,
I
D
= –4.9A
36
58
50
15
42
75
60
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= –4.5V, I
D
= –3.7A
m
Ω
V
GS
= –10
V
,
I
D
= –4.9A, T
J
= 125°C
V
DD
= –10
V
,
I
D
= –4.9A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
755
145
125
13
1005
195
pF
pF
pF
Ω
V
DS
= –15V, V
GS
= 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
190
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
7
4
14
10
53
37
24
13
ns
ns
V
DD
= –15V, I
D
= –4.9A
V
GS
= –10V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
33
23
17
9
ns
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0V to –10V
nC
nC
nC
nC
Q
g
V
GS
= 0V to –4.5V
V
DD
= –15V,
I
D
= –4.9A
Q
gs
Q
gd
2.9
4.3
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain-Source Diode Forward Current
–1.3
–1.2
35
A
V
V
SD
t
rr
Source to Drain Diode
Forward Voltage
V
GS
= 0V, I
S
= –1.3A
(Note 2)
–0.8
19
9
Reverse Recovery Time
I
F
= –4.9A, di/dt = 100A/
µ
s
Reverse Recovery Charge
ns
nC
Q
rr
18
Notes:
2
1. R
is determined with the device mounted on a 1in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
a. 78°C/W when mounted
on a
1 in
pad of
2 oz
copper.
b. 156°C/W when mounted on
a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 30
0
µ
s, Duty cycle < 2.0%.
2
Typical Characteristics
T
J
= 25°C unless otherwise noted
20
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
GS
= -3.5V
V
GS
= -10V
15
V
GS
= -4V
V
GS
= -5V
V
GS
= -4.5V
10
V
GS
= -4.5V
V
GS
= -4V
V
GS
= -5V
5
V
GS
= -3.5V
V
GS
= -10V
0
0
1
2
3
4
0
5
10
15
20
-V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
-I
D
,
DRAIN CURRENT(A)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
200
I
D
= -4.9A
GS
= -10V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
I
D
= -4.9A
V
1.4
1.2
1.0
0.8
0.6
150
100
50
T
J
= 125
o
C
T
J
= 25
o
C
0
-75 -50 -25
0
25 50 75
100 125 150
3
4
5
6
7
8
9
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
-V
GS
,
GATE TO SOURCE VOLTAGE
(
V
)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
20
20
10
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 0V
15
V
DD
= -5V
1
T
J
= 150
o
C
10
0.1
T
J
= 150
o
C
T
J
= 25
o
C
5
0.01
1E-3
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= -55
o
C
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
2000
1000
I
D
= -4.9A
C
iss
8
V
DD
= -10V
V
DD
= -15V
6
C
oss
V
DD
= -20V
4
C
rss
2
0
100
50
f = 1MHz
= 0V
V
GS
0
4
8
12
16
20
0.1
1
10
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE(nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
10
5
30
10
10
4
V
DS
= 0V
100us
1ms
10
3
10
2
1
0.1
T
J
= 150
o
C
10
1
10ms
100ms
1s
SINGLE PULSE
T
J
= MAX RATED
10
0
R
θ
JA
= 156
o
C/W
10
-1
T
A
= 25
o
C
T
J
= 25
o
C
10s
DC
10
-2
10
-3
THIS AREA IS
LIMITED BY r
DS(on)
0.01
0.1
1
10
100
0
5
10
15
20
25
30
35
-V
GS
,
GATE TO SOURCE VOLTAGE (V)
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 9.
Gate Leakage Current vs Gate to
Source Voltage
Figur
e
1
0. Forward Bias Safe
Operating Area
1000
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
100
10
1
0.5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
10
2
10
3
Figure 11.
Single Pulse Maximum Power Dissipation
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
D = 0.5
1
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
t
1
t
2
0.01
1E-3
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T
= P
J
x Z
x R
+ T
SINGLE PULSE
R
θ
JA
= 156
o
C/W
DM
θ
JA
θ
JA
A
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 12.
Transient Thermal Response Curve
5
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