HUASHUO-HSU0048
| Part # | HUASHUO-HSU0048 |
Download  | HUASHUO-HSU0048 |
HSU0048
N-Ch 100V Fast Switching MOSFETs
Product Summary
⚫
⚫
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100% EAS Guaranteed
Low R
DS(ON)
Low Gate Charge
V
DS
100
6.6
73
V
RoHs and Halogen-Free Compliant
R
DS(ON),TYP
m
Ω
A
I
D
Description
TO252 Pin Configuration
The HSU0048 is the high cell density trenched N-
ch MOSFETs, which provide excellent RDSON and
gate charge for most of the Synchronous
Rectification for AC/DC Quick Charger.
Absolute Maximum Ratings
Parameter
Rating
Symbol
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
100
±20
V
V
Continuous Drain Current
1
Continuous Drain Current
1
Pulsed Drain Current
2
73
A
I
D
@T
C
=25
I
D
@T
C
=70
I
DM
46
A
290
A
EAS
Single Pulse Avalanche Energy
3
61
mJ
A
I
AS
Avalanche Current
35
Total Power Dissipation
4
108
W
P
D
@T
C
=25
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Typ.
Max.
25
Unit
/W
/W
/W
Thermal Resistance Junction-Ambient
1
(t
10s)
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
—
R
θJA
—
—
55
R
θJC
1.15
1
HSU0048
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
100
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
BV
DSS
V
GS
=0V , I
D
=250uA
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
V
GS
=10V , I
D
=13.5A
6.6
8.7
—
8.5
11
2.3
1
R
DS(ON)
V
GS(th)
I
DSS
m
V
V
GS
=4.5V , I
D
=11.5A
V
GS
=V
DS
, I
D
=250uA
V
DS
=80V , V
GS
=0V , T
J
=25
—
Drain-Source Leakage Current
uA
—
5
V
DS
=80V , V
GS
=0V , T
J
=55
V
GS
=±20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
—
nA
S
±100
—
—
—
—
—
—
—
—
—
—
—
—
V
DS
=5V , I
D
=20A
85
Qg
45
Qg
19.3
9.5
4.8
10
V
DS
=50V , V
GS
=10V , I
D
=13.5A
nC
Qgs
Qgd
Td(on)
Tr
Turn-On Delay Time
Rise Time
V
DD
=50V , V
GS
=10V , R
G
=3
,
6.5
45
ns
Td(off)
Tf
Turn-Off Delay Time
Fall Time
I
D
=13.5A
7.5
3320
605
20
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=50V , V
GS
=0V , f=1MHz
pF
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
48
Unit
A
Continuous Source Current
1,5,
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
I
S
V
G
=V
D
=0V , Force Current
V
SD
t
rr
—
—
1.1
—
V
V
GS
=0V , I
S
=1A , T
J
=25
I
F
=13.5A , di/dt=100A/µs ,
T
J
=25
—
33
nS
nC
Q
rr
—
150
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
.
The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.3mH,I
AS
=35A
4.
The power dissipation is limited by 150
℃
junctio
n
t
emperature
5
.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
HSU0048
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
Fig.3 Source-Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
HSU0048
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
BV
DSS
EAS=
BV
DSS
L x I
AS2
x
V
DS
BV
DSS
-V
DD
2
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
